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IPW65R125C7 [INFINEON]

英飞凌的 CoolMOS™ C7 超结 MOSFET 系列是技术的一次突破性进步，在全球范围内实现了低 RDS(on)/封装，并且得益于其低开关损耗，可在全负载范围内提高效率。;
IPW65R125C7
型号： IPW65R125C7
厂家： Infineon    Infineon
描述：

英飞凌的 CoolMOS™ C7 超结 MOSFET 系列是技术的一次突破性进步，在全球范围内实现了低 RDS(on)/封装，并且得益于其低开关损耗，可在全负载范围内提高效率。

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MOSFET  
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor  
CoolMOS™ꢀC7  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPW65R125C7  
DataꢀSheet  
Rev.ꢀ2.0  
Final  
PowerꢀManagementꢀ&ꢀMultimarket  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPW65R125C7  
TO-247  
1ꢀꢀꢀꢀꢀDescription  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.  
CoolMOS™ꢀC7ꢀseriesꢀcombinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJ  
MOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.ꢀTheꢀproductꢀportfolio  
providesꢀallꢀbenefitsꢀofꢀfastꢀswitchingꢀsuperjunctionꢀMOSFETsꢀoffering  
betterꢀefficiency,ꢀreducedꢀgateꢀcharge,ꢀeasyꢀimplementationꢀand  
outstandingꢀreliability.  
Features  
Drain  
Pin 2, tab  
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggedness  
•ꢀBetterꢀefficiencyꢀdueꢀtoꢀbestꢀinꢀclassꢀFOMꢀRDS(on)*EossꢀandꢀRDS(on)*Qg  
•ꢀBestꢀinꢀclassꢀRDS(on)ꢀ/package  
•ꢀEasyꢀtoꢀuse/drive  
Gate  
Pin 1  
•ꢀPb-freeꢀplating,ꢀhalogenꢀfreeꢀmoldꢀcompound  
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20  
andꢀJESD22)  
Source  
Pin 3  
Benefits  
•ꢀEnablingꢀhigherꢀsystemꢀefficiency  
•ꢀEnablingꢀhigherꢀfrequencyꢀ/ꢀincreasedꢀpowerꢀdensityꢀsolutions  
•ꢀSystemꢀcostꢀ/ꢀsizeꢀsavingsꢀdueꢀtoꢀreducedꢀcoolingꢀrequirements  
•ꢀHigherꢀsystemꢀreliabilityꢀdueꢀtoꢀlowerꢀoperatingꢀtemperatures  
Applications  
PFCꢀstagesꢀandꢀhardꢀswitchingꢀPWMꢀstagesꢀforꢀe.g.ꢀComputing,ꢀServer,  
Telecom,ꢀUPSꢀandꢀSolar.  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Qg.typ  
Value  
700  
125  
35  
Unit  
V
mΩ  
nC  
A
ID,pulse  
75  
Eoss@400V  
Body diode di/dt  
4.2  
µJ  
55  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPW65R125C7  
PG-TO 247  
65C7125  
see Appendix A  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2013-10-11  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPW65R125C7  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2013-10-11  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPW65R125C7  
2ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
-
-
-
-
18  
12  
TC=25°C  
TC=100°C  
Continuous drain current 1)  
ID  
A
Pulsed drain current 2)  
ID,pulse  
EAS  
EAR  
IAS  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
75  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, single pulse  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
Power dissipation  
-
89  
mJ  
mJ  
A
ID=7.1A; VDD=50V; see table 10  
-
0.44  
7.1  
100  
20  
ID=7.1A; VDD=50V; see table 10  
-
-
dv/dt  
VGS  
VGS  
Ptot  
Tstg  
Tj  
-
V/ns VDS=0...400V  
-20  
-30  
-
V
static;  
30  
V
AC (f>1 Hz)  
101  
150  
150  
60  
W
°C  
°C  
TC=25°C  
Storage temperature  
-55  
-55  
-
-
-
Operating junction temperature  
Mounting torque  
-
Ncm M3 and M3.5 screws  
Continuous diode forward current  
Diode pulse current2)  
IS  
-
18  
A
A
TC=25°C  
IS,pulse  
-
75  
TC=25°C  
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀ  
see table 8  
Reverse diode dv/dt 3)  
dv/dt  
-
-
1
V/ns  
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀ  
see table 8  
Maximum diode commutation speed  
Insulation withstand voltage  
dif/dt  
-
-
-
-
55  
A/µs  
VISO  
n.a.  
V
Vrms,ꢀTC=25°C,ꢀt=1min  
1) Limited by Tj max  
.
2) Pulse width tp limited by Tj,max  
ꢀ3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2013-10-11  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPW65R125C7  
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
1.24  
62  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W leaded  
Thermal resistance, junction - ambient  
for SMD version  
RthJA  
-
-
-
-
-
°C/W n.a.  
Soldering temperature, wavesoldering  
only allowed at leads  
1.6mm (0.063 in.) from case for  
10s  
Tsold  
260  
°C  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2013-10-11  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPW65R125C7  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
650  
3
Typ.  
-
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
-
V
V
VGS=0V,ꢀID=1mA  
3.5  
4
VDS=VGS,ꢀID=0.44mA  
-
-
-
10  
1
-
VDS=650,ꢀVGS=0V,ꢀTj=25°C  
VDS=650,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
0.111 0.125  
0.265  
VGS=10V,ꢀID=8.9A,ꢀTj=25°C  
VGS=10V,ꢀID=8.9A,ꢀTj=150°C  
RDS(on)  
RG  
-
-
1
-
Ω
f=1MHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
1670  
26  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
Coss  
Effective output capacitance, energy  
related 1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
53  
579  
14  
15  
71  
8
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance, time related  
2)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=13V,ꢀID=8.9A,  
RG=10Ω;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=8.9A,  
RG=10Ω;ꢀseeꢀtableꢀ9  
VDD=400V,ꢀVGS=13V,ꢀID=8.9A,  
RG=10Ω;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
VDD=400V,ꢀVGS=13ꢀV,ꢀID=8.9A,  
RG=10Ω;ꢀseeꢀtableꢀ9  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
8
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=8.9A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=8.9A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=8.9A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=8.9A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
11  
Qg  
35  
Gate plateau voltage  
Vplateau  
5.4  
ꢀ1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
ꢀ2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2013-10-11  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPW65R125C7  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
0.9  
-
V
VGS=0V,ꢀIF=8.9A,ꢀTj=25°C  
VR=400V,ꢀIF=18A,ꢀdiF/dt=55A/µs;  
see table 8  
-
-
-
800  
7
-
-
-
ns  
VR=400V,ꢀIF=18A,ꢀdiF/dt=55A/µs;  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=400V,ꢀIF=18A,ꢀdiF/dt=55A/µs;  
see table 8  
Peak reverse recovery current  
20  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2013-10-11  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPW65R125C7  
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
110  
102  
100 µs  
1 ms  
10 µs  
1 µs  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10 ms  
101  
100  
DC  
10-1  
10-2  
10-3  
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
101  
10 µs  
1 µs  
100 µs  
1 ms  
10 ms  
DC  
101  
100  
100  
0.5  
0.2  
0.1  
10-1  
10-2  
10-3  
10-1 0.05  
0.02  
0.01  
single pulse  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2013-10-11  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPW65R125C7  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
80  
50  
20 V  
20 V  
8 V  
10 V  
45  
40  
35  
30  
25  
20  
15  
10  
5
10 V 8 V  
7 V  
70  
60  
50  
40  
30  
20  
10  
0
7 V  
6 V  
5.5 V  
6 V  
5 V  
5.5 V  
5 V  
4.5 V  
4.5 V  
0
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
0.60  
0.30  
5.5 V  
6 V  
6.5 V 7 V  
20 V  
10 V  
0.55  
0.50  
0.45  
0.40  
0.35  
0.30  
0.25  
0.20  
0.25  
0.20  
98%  
0.15  
typ  
0.10  
0.05  
0
10  
20  
30  
40  
50  
60  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=8.9ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2013-10-11  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPW65R125C7  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
90  
12  
120 V  
400 V  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
8
25 °C  
6
150 °C  
4
2
0
0
2
4
6
8
10  
12  
0
10  
20  
30  
40  
50  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=8.9Aꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀAvalancheꢀenergy  
102  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
101  
125 °C  
25 °C  
100  
10-1  
0.0  
0.5  
1.0  
1.5  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=7.1ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2013-10-11  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPW65R125C7  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
760  
105  
740  
720  
700  
680  
660  
640  
620  
600  
580  
104  
Ciss  
103  
102  
Coss  
101  
Crss  
100  
-60  
-20  
20  
60  
100  
140  
180  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
6
5
4
3
2
1
0
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2013-10-11  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPW65R125C7  
6ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
V,I  
VDS  
Rg1  
VDS(peak)  
VDS  
trr  
VDS  
IF  
tF  
tS  
dIF / dt  
Rg 2  
IF  
t
10%Irrm  
Q
F
Q
S
IF  
dI / dt  
rr  
trr =tF +tS  
rr  
Irrm  
Q =QF +Q  
S
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VD  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
12  
Rev.ꢀ2.0,ꢀꢀ2013-10-11  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPW65R125C7  
7ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
13  
Rev.ꢀ2.0,ꢀꢀ2013-10-11  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPW65R125C7  
8ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSTMꢀC7ꢀWebpage:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀC7ꢀapplicationꢀnote:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀC7ꢀsimulationꢀmodel:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
14  
Rev.ꢀ2.0,ꢀꢀ2013-10-11  
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor  
IPW65R125C7  
RevisionꢀHistory  
IPW65R125C7  
Revision:ꢀ2013-10-11,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
2.0  
Subjects (major changes since last revision)  
Release of final version  
2013-10-11  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Editionꢀ2011-08-01  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2011ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith  
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication  
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout  
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
15  
Rev.ꢀ2.0,ꢀꢀ2013-10-11  

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