IPW95R060PFD7 [INFINEON]

The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPW95R060PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPW95R060PFD7 in the TO-247 package features RDS(on) of 60 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device.;


型号：	IPW95R060PFD7
厂家：	Infineon
描述：	The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPW95R060PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPW95R060PFD7 in the TO-247 package features RDS(on) of 60 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device.
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中文：	中文翻译
下载：	下载PDF数据表文档文件

IPW95R060PFD7

MOSFET

PG-TO247-3

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

Theꢀlatestꢀ950VꢀCoolMOS™ꢀPFD7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀthe

superꢀjunctionꢀ(SJ)ꢀtechnologies.ꢀThisꢀtechnologyꢀisꢀdesignedꢀtoꢀaddress

LightingꢀandꢀIndustrialꢀSMPSꢀapplicationsꢀbyꢀcombiningꢀbest-in-class

performanceꢀwithꢀstate-of-the-artꢀeaseꢀofꢀuse.ꢀComparedꢀtoꢀthe

CoolMOS™ꢀP7ꢀfamilies,ꢀtheꢀPFD7ꢀoffersꢀanꢀintegratedꢀultra-fastꢀbody

diodeꢀenablingꢀusageꢀinꢀresonantꢀtopologiesꢀwithꢀmarketsꢀlowestꢀreverse

recoveryꢀchargeꢀ(Qrr).

Tab

Features

•ꢀIntegratedꢀultra-fastꢀbodyꢀdiode

•ꢀBest-in-classꢀreverseꢀrecoveryꢀchargeꢀQ_rr

•ꢀBest-in-classꢀFOMꢀR_DS(on)ꢀ*ꢀE_oss,ꢀreducedꢀQ_g,ꢀC_iss,ꢀandꢀC_oss

•ꢀBest-in-classꢀV_(GS)thꢀofꢀ3VꢀandꢀsmallestꢀꢀV_(GS)thꢀvariationꢀofꢀ±0.5V

•ꢀIntegratedꢀfastꢀbodyꢀdiode

Drain

Pin 2, Tab

•ꢀBest-in-classꢀCoolMOS™ꢀqualityꢀandꢀreliability

•ꢀFullyꢀoptimizedꢀportfolio

Gate

Pin 1

•ꢀBest-in-classꢀR_DS(on)ꢀinꢀTHDꢀandꢀSMDꢀpackages

•ꢀESDꢀprotectionꢀmin.ꢀClassꢀ2ꢀ(HBM)

Source

Pin 3

*1: Internal body diode

Benefits

•ꢀExcellentꢀhardꢀcommutationꢀrobustnessꢀenablingꢀusageꢀinꢀresonant

topologies

•ꢀExtraꢀsafetyꢀmarginꢀforꢀdesignsꢀwithꢀincreasedꢀbusꢀvoltage

•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions

•ꢀImprovedꢀfullꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications

•ꢀPriceꢀcompetitivenessꢀoverꢀpreviousꢀCoolMOS™ꢀfamilies

•ꢀImprovedꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures

Potentialꢀapplications

•ꢀSuitableꢀforꢀhardꢀ&ꢀsoftꢀswitchingꢀtopologies

•ꢀOptimizedꢀforꢀusageꢀinꢀLLCꢀandꢀZVSꢀtopologies

•ꢀPFCꢀ&ꢀLLCꢀapplicationsꢀinꢀLightingꢀandꢀIndustrialꢀSMPS

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j= 25 °C

R_DS(on),max

Value

Unit

950

mΩ

Q_g,typ

315

I_D

74.7

20.8

1300

0.74

E_oss@ 500V

Body diode di_F/dt

Q_oss@ 500V

µJ

A/µs

µC

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

95R060D7

RelatedꢀLinks

IPW95R060PFD7

PG-TO247-3

see Appendix A

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPW95R060PFD7

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPW95R060PFD7

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

74.7

47.3

T_C=25°C

Continuous drain current¹⁾

I_D

T_C=100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

E_AR

I_AS

342

228

1.75

5.7

120

T_C=25°C

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, single pulse

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation

I_D=5.7A; V_DD=50V; see table 10

dv/dt

V_GS

P_tot

T_stg

T_j

V/ns V_DS=0...400V

-20

-30

static;

AC (f>1 Hz)

446

150

°C

T_C=25°C

Storage temperature

-55

Operating junction temperature

Mounting torque

Ncm M3 and M3.5 screws

Continuous diode forward current

Diode pulse current²⁾

I_S

T_C=25°C

I_S,pulse

342

V_DS=0...400V,ꢀI_SD<=53A,ꢀT_j=25°Cꢀꢀꢀꢀꢀ

see table 8

Reverse diode dv/dt³⁾

dv/dt

V/ns

V_DS=0...400V,ꢀI_SD<=53A,ꢀT_j=25°Cꢀꢀꢀꢀꢀ

see table 8

Maximum diode commutation speed

Insulation withstand voltage

di_F/dt

1300 A/µs

n.a.

V_ISO

V_rms,ꢀT_C=25°C,ꢀt=1min

¹⁾Limited by T_j,max. Maximum Duty Cycle D = 0.50

²⁾Pulse width t_plimited by T_j,max

³⁾Identical low side and high side switch with identical R_G

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPW95R060PFD7

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

0.28

Thermal resistance, junction - case

R_thJC

°C/W -

Thermal resistance, junction - ambient R_thJA

°C/W leaded

Thermal resistance, junction - ambient

for SMD version

R_thJA

°C/W n.a.

Soldering temperature, wavesoldering

only allowed at leads

T_sold

260

°C

1.6mm (0.063 in.) from case for 10s

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPW95R060PFD7

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

950

2.5

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_(GS)th

V_GS=0V,ꢀI_D=1mA

3.5

V_DS=V_GS,ꢀI_D=2.85mA

V_DS=950V,ꢀV_GS=0V,ꢀT_j=25°C

V_DS=950V,ꢀV_GS=0V,ꢀT_j=150°C

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

I_DSS

µA

Ω

200

I_GSS

100

V_GS=20V,ꢀV_DS=0V

0.04

0.12

0.06

V_GS=10V,ꢀI_D=57.0A,ꢀT_j=25°C

V_GS=10V,ꢀI_D=57.0A,ꢀT_j=150°C

R_DS(on)

R_G

0.5

Ω

f=250kHz,ꢀopenꢀdrain

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Input capacitance

Output capacitance

C_iss

9378

117

V_GS=0V,ꢀV_DS=400V,ꢀf=250kHz

C_oss

Effective output capacitance, energy

related¹⁾

C_o(er)

C_o(tr)

t_d(on)

t_r

194

1969

V_GS=0V,ꢀV_DS=0...400V

Effective output capacitance, time

related²⁾

I_D=constant,ꢀV_GS=0V,ꢀV_DS=0...400V

V_DD=400V,ꢀV_GS=13V,ꢀI_D=57.0A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Turn-on delay time

Rise time

V_DD=400V,ꢀV_GS=13V,ꢀI_D=57.0A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

V_DD=400V,ꢀV_GS=13V,ꢀI_D=57.0A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Turn-off delay time

Fall time

t_d(off)

t_f

248

7.1

V_DD=400V,ꢀV_GS=13V,ꢀI_D=57.0A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

V_DD=760V,ꢀI_D=57.0A,ꢀV_GS=0ꢀtoꢀ10V

Q_gd

Q_g

315

4.5

Gate plateau voltage

V_plateau

¹⁾ꢀC_o(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

²⁾ꢀC_o(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPW95R060PFD7

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics

Values

Typ.

1.1

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Diode forward voltage

Reverse recovery time

V_SD

t_rr

V_GS=0V,ꢀI_F=57.0A,ꢀT_j=25°C

V_R=400V,ꢀI_F=57.0A,ꢀdi_F/dt=100A/µs;

see table 8

213

V_R=400V,ꢀI_F=57.0A,ꢀdi_F/dt=100A/µs;

see table 8

Reverse recovery charge

Q_rr

I_rrm

1.84

16.3

µC

V_R=400V,ꢀI_F=57.0A,ꢀdi_F/dt=100A/µs;

see table 8

Peak reverse recovery current

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPW95R060PFD7

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams

Diagramꢀ1:ꢀPowerꢀdissipation

Diagramꢀ2:ꢀSafeꢀoperatingꢀarea

450

10³

1 µs

400

350

300

250

200

150

100

10²

10¹

10 µs

100 µs

1 ms

10⁰

10^-1

10^-2

10^-3

10^-4

10 ms

100

125

150

10⁰

10¹

10²

10³

T_Cꢀ[°C]

V_DSꢀ[V]

P_tot=f(T_C)

I_D=f(V_DS);ꢀT_C=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance

10³

10⁰

1 µs

10²

10¹

10 µs

0.5

100 µs

10^-1

0.2

10⁰

1 ms

0.1

10^-1

10^-2

10^-3

10^-4

0.05

10 ms

0.01

0.02

10^-2

single pulse

10^-3

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

V_DSꢀ[V]

t_pꢀ[s]

I_D=f(V_DS);ꢀT_C=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Z_thJCꢀ=f(t_P);ꢀparameter:ꢀD=t_p/T

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPW95R060PFD7

Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics

Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics

250

125

20 V

10 V

8 V

20 V

10 V

7 V

200

100

6 V

8 V

7 V

6 V

5.5 V

5 V

5.5 V

150

4.5 V

5 V

100

4.5 V

V_DSꢀ[V]

I_D=f(V_DS);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

I_D=f(V_DS);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance

Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance

0.200

3.0

2.5

2.0

1.5

1.0

0.5

20 V

0.160

10 V

7 V

0.120

6.5 V

6 V

5.5 V

0.080

100

125

-50

-25

100

125

150

I_Dꢀ[A]

T_jꢀ[°C]

R_DS(on)=f(I_D);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

R_DS(on)=f(T_j);ꢀI_D=57.0ꢀA;ꢀV_GS=10ꢀV

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPW95R060PFD7

Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics

Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge

250

25 °C

200

760 V

120 V

150

150 °C

100

80 120 160 200 240 280 320 360 400

V_GSꢀ[V]

Q_gateꢀ[nC]

I_D=f(V_GS);ꢀV_DS=20V;ꢀparameter:ꢀT_j

V_GS=f(Q_gate);ꢀI_D=57.0ꢀAꢀpulsed;ꢀparameter:ꢀV_DD

Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode

Diagramꢀ12:ꢀAvalancheꢀenergy

10³

250

200

150

100

10²

125 °C

25 °C

10¹

10⁰

10^-1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

100

125

150

V_SDꢀ[V]

T_jꢀ[°C]

I_F=f(V_SD);ꢀparameter:ꢀT_j

E_AS=f(T_j);ꢀI_D=5.7ꢀA;ꢀV_DD=50ꢀV

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPW95R060PFD7

Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage

Diagramꢀ14:ꢀTyp.ꢀcapacitances

1050

10⁶

1030

1010

990

970

950

930

910

890

870

850

10⁵

10⁴

Ciss

10³

Coss

10²

10¹

Crss

10⁰

-50

-25

100

125

150

100

200

300

400

500

T_jꢀ[°C]

V_DSꢀ[V]

V_BR(DSS)=f(T_j);ꢀI_D=1ꢀmA

C=f(V_DS);ꢀV_GS=0ꢀV;ꢀf=250ꢀkHz

Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy

200

400

600

800

1000

V_DSꢀ[V]

E_oss=f(V_DS

)

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPW95R060PFD7

5ꢀꢀꢀꢀꢀTestꢀCircuits

Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics

Test circuit for diode characteristics

Diode recovery waveform

R_g1

V_DS

R_g2

I_F

R_g1 = R_g2

Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes

Switching times test circuit for inductive load

Switching times waveform

V_DS

90%

10%

V_DS

V_GS

t_d(off)

t_f

t_d(on)

t_on

t_r

t_off

Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload

Unclamped inductive load test circuit

Unclamped inductive waveform

V_(BR)DS

I_D

V_DS

I_D

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPW95R060PFD7

6ꢀꢀꢀꢀꢀPackageꢀOutlines

MILLIMETERS

MAX.

DIMENSIONS

MIN.

4.70

2.20

1.50

1.00

1.60

2.57

0.38

20.70

13.08

0.51

15.50

12.38

3.40

1.00

5.30

2.60

2.50

1.40

2.41

3.43

0.89

21.50

17.65

1.35

16.30

14.15

5.10

2.60

DOCUMENT NO.

Z8B00003327

REVISION

SCALE 3:1

0 1 2 3 4

5mm

EUROPEAN PROJECTION

5.44

19.80

3.85

3.50

5.35

6.04

20.40

4.50

3.70

6.25

6.30

ISSUE DATE

25.07.2018

Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO247-3,ꢀdimensionsꢀinꢀmm

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPW95R060PFD7

7ꢀꢀꢀꢀꢀAppendixꢀA

Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks

• IFXꢀCoolMOSꢀPFD7ꢀ950VꢀWebpage:ꢀwww.infineon.com

• IFXꢀCoolMOSꢀPFD7ꢀ950Vꢀapplicationꢀnote:ꢀwww.infineon.com

• IFXꢀCoolMOSꢀPFD7ꢀ950Vꢀsimulationꢀmodel:ꢀwww.infineon.com

• IFXꢀDesignꢀtools:ꢀwww.infineon.com

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

IPW95R060PFD7

RevisionꢀHistory

IPW95R060PFD7

Revision:ꢀ2022-04-22,ꢀRev.ꢀ2.1

Previous Revision

Revision Date

Subjects (major changes since last revision)

Release of final version

2.0

2.1

2022-03-18

2022-04-22

Modified features

Trademarks

Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.

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improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:

erratum@infineon.com

Publishedꢀby

InfineonꢀTechnologiesꢀAG

81726ꢀMünchen,ꢀGermany

AllꢀRightsꢀReserved.

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(“Beschaffenheitsgarantie”)ꢀ.

Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe

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Warnings

Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,

pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.

TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or

automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa

failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand

aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare

intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis

reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-04-22

IPW95R060PFD7 [INFINEON]

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