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IQE022N06LM5CGSC [INFINEON]

IQE022N06LM5CGSC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in a PQFN 3.3x3.3 Source-Down Center-Gate (CG) dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C , superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages, such as increased thermal capability, advanced power density and improved layout possibilities. Combined with the innovative dual-side cooling package, which can dissipate up to three times more power than the traditional overmolded package, IQE022N06LM5CGSC is targeted for high power density and performance SMPS products commonly found in telecom and data servers.;
IQE022N06LM5CGSC
型号： IQE022N06LM5CGSC
厂家： Infineon    Infineon
描述：

IQE022N06LM5CGSC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in a PQFN 3.3x3.3 Source-Down Center-Gate (CG) dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C , superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages, such as increased thermal capability, advanced power density and improved layout possibilities. Combined with the innovative dual-side cooling package, which can dissipate up to three times more power than the traditional overmolded package, IQE022N06LM5CGSC is targeted for high power density and performance SMPS products commonly found in telecom and data servers.

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IQE022N06LM5CGSC  
MOSFET  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV  
PG-WHTFN-9  
5
6
Features  
7
8
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsynchronousꢀrectification  
•ꢀN-channel,ꢀlogicꢀlevel  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
•ꢀSuperiorꢀthermalꢀresistance  
•ꢀ100%ꢀavalancheꢀtested  
9
Pin 1  
4
2
3
3
2
4
1
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Drain  
Pin 5-8  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
*1  
Gate  
Pin 9  
Parameter  
Value  
Unit  
Source  
Pin 1-4  
VDS  
60  
V
*1: Internal body diode  
RDS(on),max@10V  
RDS(on),max@4.5V  
ID  
2.2  
2.9  
151  
45  
mΩ  
mΩ  
A
Qoss  
nC  
nC  
QGꢀ(0V...4.5V)  
26  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IQE022N06LM5CGSC  
PG-WHTFN-9  
P
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2023-01-12  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV  
IQE022N06LM5CGSC  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2023-01-12  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV  
IQE022N06LM5CGSC  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
-
-
151  
107  
93  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
Continuous drain current1)  
ID  
A
VGS=4.5ꢀV,ꢀTC=100ꢀ°C  
24  
VGS=10V,TA=25°C,RthJA=60°C/W2)  
Pulsed drain current3)  
Avalanche energy, single pulse4)  
ID,pulse  
EAS  
-
-
-
-
604  
241  
20  
A
TA=25ꢀ°C  
-
mJ  
V
ID=20ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-20  
-
-
-
-
-
100  
2.5  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=60ꢀ°C/W2)  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
bottom  
RthJC  
RthJC  
RthJA  
-
0.9  
0.7  
-
1.5  
°C/W -  
°C/W -  
°C/W -  
Thermal resistance, junction - case,  
top  
-
-
-
Thermal resistance, junction - ambient,  
6 cm² cooling area2)  
60  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2023-01-12  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV  
IQE022N06LM5CGSC  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
60  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
VDS=VGS,ꢀID=48ꢀµA  
1.1  
1.7  
2.3  
-
-
0.1  
10  
1.0  
100  
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
1.9  
2.5  
2.2  
2.9  
VGS=10ꢀV,ꢀID=20ꢀA  
VGS=4.5ꢀV,ꢀID=10ꢀA  
RDS(on)  
mΩ  
Gate resistance  
Transconductance1)  
RG  
gfs  
-
-
1.1  
93  
1.4  
-
Ω
-
S
|VDS|≥2|ID|RDS(on)max,ꢀID=20ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance1)  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
3400 4420 pF  
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz  
720  
35  
936  
63  
pF  
pF  
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
6.1  
4.1  
26  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
5.9  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
8.5  
5.9  
8
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge1)  
Switching charge  
Gate charge total1)  
Gate plateau voltage  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=30ꢀV,ꢀVGS=0ꢀV  
Qg(th)  
Qgd  
-
12  
-
Qsw  
Qg  
10.7  
26  
33  
-
Vplateau  
Qg  
2.5  
53  
-
nC  
nC  
Output charge1)  
Qoss  
45  
59  
1) Defined by design. Not subject to production test.  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2023-01-12  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV  
IQE022N06LM5CGSC  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
91  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
604  
1.0  
52  
A
TC=25ꢀ°C  
Diode forward voltage  
0.79  
26  
V
VGS=0ꢀV,ꢀIF=20ꢀA,ꢀTj=25ꢀ°C  
VR=30ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=30ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=30ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=1000ꢀA/µs  
VR=30ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=1000ꢀA/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
Reverse recovery time1)  
Reverse recovery charge1)  
ns  
nC  
ns  
nC  
Qrr  
trr  
19  
38  
17  
34  
Qrr  
98  
196  
1) Defined by design. Not subject to production test.  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2023-01-12  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV  
IQE022N06LM5CGSC  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
120  
175  
150  
125  
100  
75  
100  
80  
60  
40  
20  
0
50  
25  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0
25  
50  
75  
100  
125  
150  
175  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
102  
1 µs  
single pulse  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
10 µs  
102  
101  
101  
100 µs  
1 ms  
100  
10-1  
10-2  
10-3  
10 ms  
DC  
100  
10-1  
10-2  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2023-01-12  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV  
IQE022N06LM5CGSC  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
700  
6
5 V  
2.8 V  
10 V  
4.5 V  
600  
500  
400  
300  
200  
100  
0
5
3 V  
3.5 V  
4
3
2
1
0
4 V  
4 V  
4.5 V  
5 V  
3.5 V  
10 V  
3 V  
2.8 V  
0
1
2
3
4
5
0
40  
80  
120  
160  
200  
240  
280  
320  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
700  
6
600  
500  
400  
300  
200  
100  
0
5
4
3
2
1
0
25 °C  
175 °C  
175 °C  
25 °C  
0
1
2
3
4
5
0
2
4
6
8
10  
12  
14  
16  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=20ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2023-01-12  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV  
IQE022N06LM5CGSC  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.4  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.0  
1.6  
1.2  
480 µA  
48 µA  
0.8  
0.4  
0.0  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=20ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
25 °C, max  
175 °C  
175 °C, max  
Ciss  
103  
102  
101  
102  
101  
100  
Coss  
Crss  
0
10  
20  
30  
40  
50  
60  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
1.75  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2023-01-12  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV  
IQE022N06LM5CGSC  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
12 V  
30 V  
48 V  
8
6
4
2
0
101  
25 °C  
100 °C  
150 °C  
100  
10-1  
100  
101  
102  
103  
0
10  
20  
30  
40  
50  
60  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=20ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
65  
64  
63  
62  
61  
60  
59  
58  
57  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2023-01-12  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV  
IQE022N06LM5CGSC  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
PACKAGE - GROUP  
NUMBER:  
PG-WHTFN-9-U01  
MILLIMETERS  
DIMENSIONS  
MIN.  
---  
MAX.  
0.75  
0.05  
0.40  
0.30  
3.40  
2.51  
2.25  
0.93  
1.78  
3.40  
1.70  
2.23  
1.485  
A
A1  
b
0
0.20  
0.10  
3.20  
2.31  
1.95  
0.73  
1.58  
3.20  
1.50  
1.93  
1.285  
c
D
D1  
D2  
D3  
D4  
E
E1  
E2  
E3  
e
0.65  
L
0.40  
0.35  
0.32  
0.60  
0.55  
0.52  
L1  
L2  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-WHTFN-9,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2023-01-12  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ60ꢀV  
IQE022N06LM5CGSC  
RevisionꢀHistory  
IQE022N06LM5CGSC  
Revision:ꢀ2023-01-12,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2023-01-12  
Trademarks  
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Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2023-01-12  

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