IR062HD4C10U-P2 [INFINEON]
HIGH VOLTAGE HALF BRIDGE; 高压半桥
| 型号： | IR062HD4C10U-P2 |
| 厂家： | 
Infineon |
| 描述： | HIGH VOLTAGE HALF BRIDGE |
| 文件： | 总7页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet No. PD60171-D
IR062HD4C10U-P2
IR082HD4C10U-P2
HIGH VOLTAGE HALF BRIDGE
Product Summary
Features
• Output Power IGBT’s in half-bridge configuration
• 575V rated breakdown voltage
• High side gate drive designed for bootstrap
operation
• Matched propagation delay for both channels
• Independent high and low side output channels
(IR062HD4C10U-P2) or cross-conduction
prevention logic (IR082HD4C10U-P2)
• Undervoltage lockout
VIN (max)
575V
3.0W
3.0V
°C
PD (TA = 25 )
VCE(ON) typ
• 3.3V, 5V and 15V input logic compatible
• Metal heatsink back for improved P
D
Package
Description
The IR062HD4C10U-P2 / IR082HD4C10U-P2 are
high voltage, high speed half bridges. Proprietary
HVIC and latch immune CMOS technologies,
along with the power IGBT technology, enable
ruggedized single package construction. The
logic inputs are compatible with standard CMOS
or LSTTL outputs, down to 3.3V logic. The front-
end features an independent high and low side
driver in phase with the logic compatible input
signals. The output features two IGBT’s in a half-
bridge configuration. Propagation delays for the
high and low side power IGBT’s are matched to
simplify use.The device can operate up to 575 volts.
7 Pin
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IR062HD4C10U-P2
IR082HD4C10U-P2
Typical Connections
HV DC Bus
VIN
Vcc
IR062HD4C10U-P2
1
2
3
6
9
7
Vcc
HIN
L IN
VB
HIN
L IN
V
IN
V O
TO
LOAD
C O M
4
COM
Please note this info sheet contains advance information which may change before the product is released to production.
HV DC Bus
VIN
IR082HD4C10U-P2
Vcc
1
2
3
6
9
7
Vcc
HIN
L IN
VB
HIN
L
V
IN
IN
V O
TO
LOAD
C O M
4
COM
Please note this info sheet contains advance information which may change before the product is released to production.
2
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IR062HD4C10U-P2
IR082HD4C10U-P2
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance
and Power Dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Min.
- 0.3
VO -0.3
-0.3
- 0.3
-0.3
—
Max.
575
Units
V
High voltage supply
IN
V
High side floating supply absolute voltage
Half-bridge output voltage
VO+ 25
B
VO
V
+ 0.3
+ 0.3
IN
V
V
V
IH/ IL
Logic input voltage (HIN & LIN)
Low side and logic fixed supply voltage
Peak diode recovery dv/dt
V
cc
V
CC
25
3.50
3.00
50
V/ns
W
dV/dt
P
Package power dissipation @ T ≤ +25°C
—
D
A
Rth
Thermal resistance, junction to ambient
Thermal resistance, junction to case (metal)
Junction temperature
—
JA
°C/W
°C
Rth
—
20
Jc
T
J
-55
150
150
300
T
Storage temperature
-55
S
T
L
Lead temperature (soldering, 10 seconds)
—
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions.
Symbol
Definition
High side floating supply absolute voltage
High voltage supply
Min.
Max.
Units
V
V
+ 10
V
+ 20
O
B
O
V
—
575
IN
V
Half-bridge output voltage
(note 1)
10
V
IN
O
V
V
Low side and logic fixed supply voltage
Logic input voltage (HIN & LIN)
Ambient temperature
20
CC
V
V
0
V
CC
125
2.0
IH/ IL
T
A
-40
I
C
Continuous collector current (TC = 25 °C)
(TC = 85 °C)
—
A
——
1.1
Note 1:
Logic operational for VO of -5 to 575V. Logic state held for VO of -5 to -V
BO
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3
IR062HD4C10U-P2
IR082HD4C10U-P2
Dynamic Electrical Characteristics
V
(V , V ) = 15V and T = 25°C unless otherwise specified. Switching time waveform definitions are shown in
BIAS CC BS A
figure 2. Refer to IC data sheets (IR2106 and IR2108) for further characteristics.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
ton
Turn-on propagation delay (see note 2)
-IR062
-IR082
-IR062
—
—
—
220
680
257
310
900
380
Vo = 0V
toff
Turn-off propagation delay (see note 2)
Vo = 575V
-IR082
—
—
—
220
28
400
—
ns
trr
Reverse recovery time (FRED Diode)
Reverse recovery charge (FRED Diode)
I = 400mA
F
Qrr
40
—
di/dt = 100 A/us
Note 2: Switching times as specified and illustrated in figure 2 are referenced to the VO output voltage.
This is shown as VO in figure 2.
Static Electrical Characteristics
V
BIAS
(V , V ) = 15V and T = 25°C unless otherwise specified. The V and I parameters are referenced to COM.
IN
IN
CC BS
A
T
= 25 oC
A
Symbol
Definition
Min. Typ. Max. Units Test Conditions
V
V
CC
supply undervoltage positive going
CCUV
+
8.0
8.9
9.8
V
threshold
V supply undervoltage negative going
CC
BSUV
+
V
V
CCUV-
7.4
8.2
9.0
V
BSUV-
threshold
I
Quiescent V
Quiescent V
supply current
supply current
0.4
20
—
1.0
60
—
1.6
150
100
250
mA
QCC
CC
BO
I
QBO
I
LK
Offset supply leakage current
Vin to VO leakage current
@25°C
@25°C
V
= 575V
= 575V,
B
I
—
—
V
IN
INLK
µA
VO = 0V
= 575V
@150°C
@25°C
—
—
1000
—
I
VO leakage current
—
250
OLK
V
O
@150°C
—
1000
—
—
V
Logic “1” input voltage
2.7
—
IH
V
= 10V to 20V
CC
V
V
Logic “0” input voltage
—
—
—
—
—
—
—
20
0.8
40
1
IL
I
Logic “1” input bias current
Logic “0” input bias current
Collector-to-Emitter saturation voltage
Diode forward voltage
IN+
V
IN
= 5V
µA
I
—
IN-
V
(on)
3.0
1.2
1.5
—
—
—
I
= 400mA
= 400mA
= 400mA
CE
C
V
EC
V
I
E
V
Bootstrap Diode forward voltage (D1)
I
F
F
4
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IR062HD4C10U-P2
IR082HD4C10U-P2
Functional Block Diagram
IR082H4C10U-P2
IR062H4C10U-P2
V
VIN
V
VIN
B
B
6
D1
9
6
D1
9
1
2
3
1
2
3
IGBT1
IGBT1
Vcc
H
V
L
Vcc
H
V
L
O
S
O
S
FRED06
FRED06
IR2108
IR2106
7
7
H
VO
H
VO
IN
IN
IGBT1
IGBT1
O
O
FRED06
FRED06
L
L
IN
IN
4
4
COM
COM
Lead Definitions
Lead
Symbol Definition
V
Logic and internal gate drive supply voltage.
Logic input for high side half bridge output, in phase
CC
HIN
LIN
Logic input for low side half bridge output, in phase (IR062xxx) or out of phase (IR082xxx)
V
V
High side gate drive floating supply
High voltage supply
B
IN
VO
Half bridge output
COM
Logic return and half bridge return
Lead Assignments
1
2
3
4
6
7
9
V
cc
HIN
LIN
COM
V
VO
9
B
7
6
V
IN
4
3
2
1
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IR062HD4C10U-P2
IR082HD4C10U-P2
Case Outline - 7 pin
4X
5.08 (.100)
2X
16.89 (.665)
16.63 (.655)
3.18 (.125)
2.92 (.115)
NOTES:
1. Dimensioning and tolerancing per
ANSI Y14.5M-1982
2. Controlling dimension: Inch
3. Dimensions are shown in
millimeters (inches)
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IR062HD4C10U-P2
IR082HD4C10U-P2
50%
50%
LIN
LIN
LIN
HIN
V O
LIN
50%
HIN
VIN
0
50%
50%
VO
ton
toff
Figure 1. Input/Output Timing Diagram
Figure 2. Switching Time Waveform Definitions
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 1/29/2000
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