IR130CSPTRPBF [INFINEON]

Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM),;


型号：	IR130CSPTRPBF
厂家：	Infineon
描述：	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), 二极管
文件：	总5页 (文件大小：175K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Bulletin I0182J rev. C 05/06

IR130CSPTR

Flipky^TM

1 Amp

Features

z Ultra Low V_Fper Footprint Area

z Low Thermal Resistance

z One-fifth Footprint of SMA

z Super Low Profile (<.7mm)

z Available Tested on Tape & Reel

Flipky^TM

Description

Major Ratings and Characteristics

True chip-scale packaging is available from International

Rectifier. The IR130CPSTR surface-mount Schottky rec-

tifier has been designed for applications requiring low

forward drop and very small foot prints on PC boards.

Typical applications are in disk drives, switching power

supplies, converters, free-wheeling diodes, battery

charging, and reverse battery protection.

Characteristics

Values

Units

Rectangular waveform

1.0

F(AV)

RRM

@tp=5μssine

220

0.33

FSM

z Small foot print, surface mountable

z Low forward voltage drop

z High frequency operation

z Guard ring for enhanced ruggedness and long term

reliability

@1.0 Apk, T =125°C

range

-55 to150

°C

The Flipky^TMpackage, is one-fifth the footprint of a

comparable SMA package and has a profile of less then

.7mm. Combined with the low thermal resistance of the

die level device, this makes the Flipky^TMthe best device

for application where printed circuit board space is at a

premium and in extremely thin application environments

such as battery packs, cell phones and PCMCIA cards.

www.irf.com

IR130CSPTR

Bulletin I0182J rev. C 05/06

Voltage Ratings

Part number

IR130CSPTR

V_R

Max. DC Reverse Voltage (V)

V_RWMMax. Working Peak Reverse Voltage (V)

Absolute Maximum Ratings

Parameters

Value Units

Conditions

I_F(AV)Max. Average Forward Current

1.0

50%duty cycle@T_PCB=120°C,rectangular waveform

I_FSMMax. Peak One Cycle Non-Repetitive

SurgeCurrent @25°C

220

5μs Sineor3μsRect.pulse

10msSineor6msRect. pulse

T_J=25°C,I_AS=2.0A,L=5.0mH

Following any rated

load condition and

with rated V_RRMapplied

E_ASNon-Repetitive Avalanche Energy

I_AR

Repetitive Avalanche Current

2.0

Current decayinglinearlytozeroin1μsec

Frequencylimited byT_Jmax.Va=1.5xVr typical

Electrical Specifications

Parameters

Typ. Max. Units

Conditions

V_FMMax. Forward Voltage (1)

Drop

0.41

0.46

0.29

0.37

0.45

0.50

0.33

0.40

100

@ 1A

T_J= 25 °C

@ 2A

@ 1A

T_J= 125 °C

V_R= rated V_R

@ 2A

I_RMMax. Reverse Leakage (1)

Current

μA

T_J= 25 °C

mA T_J= 125 °C

pF V_R= 5V_DC(test signal range 100kHz to 1MHz) 25°C

C_T

Max. Junction Capacitance

210

dv/dt Max. Volatge Rate of Charge

10000 V/ μs (Rated V_R)

(1) Pulse Width < 300μs, Duty Cycle < 2%

Thermal-Mechanical Specifications

Parameters

Value Units

Conditions

T_J

Max.Junction Temperature Range (*)

-55 to150

°C

T_stgMax. Storage Temperature Range

R_thJLTyp. Thermal Resistance Junction

°C/W DC operation

to PCB

(**)

R_thJAMax. Thermal Resistance Junction

to Ambient

°C/W

(*) dPtot

dTj

thermal runaway condition for a diode on its own heatsink

Rth(j-a)

(**) Mounted 1 inch square PCB

www.irf.com

IR130CSPTR

Bulletin I0182J rev. C 05/06

100

Tj = 150˚C

125˚C

100˚C

75˚C

50˚C

25˚C

0.1

0.01

0.001

ReverseVoltage-V_R(V)

Fig.2-Typical Values Of Reverse Current

Vs. Reverse Voltage (PerLeg)

= 150˚C

= 125˚C

25˚C

1000

100

= 25˚C

0.1

0.2

0.4

0.6

0.8

ForwardVoltageDrop-V_FM(V)

Fig.1-Max. Forward Voltage Drop Characteristics

(PerLeg)

ReverseVoltage-V_R(V)

Fig.3-Typical Junction Capacitance

Vs. Reverse Voltage (PerLeg)

www.irf.com

IR130CSPTR

Bulletin I0182J rev. C 05/06

0.5

0.4

0.3

0.2

0.1

160

D = 3/4

D = 1/2

D = 1/3

D = 1/4

D = 1/5

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

150

140

130

120

110

RMS Limit

100

Square wave (D = 0.50)

80% Vr applied

see note (2)

0.2 0.4 0.6 0.8

1.2 1.4 1.6

0.2 0.4 0.6 0.8

1.2 1.4 1.6

AverageForwardCurrent-I _F(AV)(A)

AverageForwardCurrent-I_F(AV)(A)

Fig. 4-Max. Allowable CaseTemperature

Vs. Average Forward Current (PerLeg)

Fig.5-Forward Power Loss Characteristics

(PerLeg)

1000

At Any Rated Load Condition

And With Rated Vrrm Applied

Following Surge

100

1000

10000

SquareWavePulseDuration-t_p(microsec)

Fig.6-Max. Non-Repetitive Surge Current (PerLeg)

HIGH-SPEED

SWITCH

IRFP460

DUT

FREE-WHEEL

DIODE

Rg = 25 o hm

Vd = 25 Volt

CURRENT

MONITOR

40HFL40S02

Fig.8-Unclamped Inductive Test Circuit

(2) Formulaused:T_C=T_J-(Pd+Pd_REV)xR_thJC

;

Pd=ForwardPowerLoss=I_F(AV)xV_FM@(I_F(AV)/D) (seeFig.6);

Pd_REV=InversePowerLoss=V_R1xI_R(1-D); I_R@80%V_Rapplied

www.irf.com

IR130CSPTR

Bulletin I0182J rev. C 05/06

FlipKY ^TMOutline Dimension and Tape and Reel

BALL ASSIGNMENTS

0.10 [.004]

1 = CATHODE

2 = CATHODE

3 = ANODE

0.675

1.524

[.060]

0.595

0.280

4 = ANODE

0.240

0.400

[.016]

0.10 [.004]

1.524

[.060]

1.524

0.395

0.355

0.800

[.032]

NOTES:

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

Ø 13"

BALL 1

LOCATION MARK

PART NUMBER

LOT NUMBER

01 123

WORKWEEK (Y, WW)

8mm

A1 BALL

LOCATION

RECOMMENDED FOOTPRINT

8mm

0.800 [.032]

Cathode Ball 1

Cathode Ball 2

FEED DIRECTION

4mm

0.800 [.032]

NOTES:

1. TAPE AND REEL OUTLINE CONFORMS TO EIA-481 & EIA-541.

Anode Ball 3

Anode Ball 4

4X Ø 0.25 [.010]

Data and specifications subject to change without notice.

This product has been designed for Consumer Level.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 05/06

www.irf.com

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