IR135DM12C [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER;
| 型号： | IR135DM12C |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER 二极管 |
| 文件： | 总3页 (文件大小：16K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0122J rev. A 02/97
IR135DM12CCB
STANDARD RECOVERY DIODES
Junction Size:
Wafer Size:
Rectangular 135 x 100 mils
4"
VRRM Class:
1200 V
Passivation Process:
Glassivated MOAT
Reference IR Packaged Part: 8EWS..S Series
Major Ratings and Characteristics
Parameters
Units
1.1 V
TestConditions
VFM
Maximum Forward Voltage
TJ = 25°C, IF = 8 A
VRRM Reverse Breakdown Voltage
1200 V
TJ = 25°C, IRRM = 100 µA
(1)
(1)Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al, (20 µm)
Nominal Front Metal Composition, Thickness
ChipDimensions
135 x 100 mils (see drawing)
100 mm, with std. < 110 > flat
300 µm, ± 10 µm
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
45 µm
0.25mmdiameterminimum
Seedrawing
InkDotLocation
RecommendedStorageEnvironment
Storageinoriginalcontainer, indessicated
nitrogen,withnocontamination
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1
IR135DM12CCB
Bulletin I0122J rev. A 02/97
Ordering Information Table
Device Code
IR 135
D
M
12
C
CB
3
1
2
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: D = Wire Bondable Standard Recovery Diode
Passivation Process: M = Glassivated MOAT
Voltage code: Code x 100 = VRRM
Metallization: C = Aluminium (Anode) - Silver (Cathode)
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in microns (mils)
2
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IR135DM12CCB
Bulletin I0122J rev. A 02/97
Wafer Layout
TOP VIEW
N° 735 Basic Cells
All dimensions are in millimeters
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3
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