IR210DG12HCB [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER;
| 型号： | IR210DG12HCB |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER 高功率电源 二极管 |
| 文件： | 总3页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0133J 05/99
IR210DG..HCB SERIES
HIGH POWER RECTIFIER DIODES
Junction Size:
Wafer Size:
Square 210 mils
4"
VRRM Class:
600 and 1200 V
PassivationProcess:
Glassivated MESA
Reference IR Packaged Part: 40HF Series
Major Ratings and Characteristics
Parameters
Units
TestConditions
VFM
MaximumForwardVoltage
1000mV
TJ=25°C IF =25A
VRRM ReverseBreakdownVoltageRange
600 and1200V TJ=25°C IR =100µA
(1)
(1) Nitrogen flow on die edge.
Mechanical Characteristics
NominalBackMetalComposition,Thickness
Cr-Ni -Ag(1KA-4KA-6KA)
NominalFrontMetalComposition,Thickness
ChipDimensions
Cr - Ni - Ag(1KA- 4KA- 6KA)
210x210mils(seedrawing)
100mm, withstd. <110>flat
300µm
WaferDiameter
WaferThickness
MaximumWidthofSawingLine
130µm
Reject Ink Dot Size
0.25mmdiameterminimum
Seedrawing
InkDotLocation
RecommendedStorageEnvironment
Storageinoriginalcontainer, indessicated
nitrogen,withnocontamination
1
IR210DG..HCB Series
Bulletin I0133J 05/99
Ordering Information Table
Device Code
IR 210
D
G
12
H
CB
3
1
2
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
InternationalRectifierDevice
Chip Dimension in Mils
Type of Device: D = Standard Recovery Diode
Passivation Process: G = Glassivated MESA
Voltage code: Code x 100 = VRRM
AvailableClass
06 = 600V
12 = 1200V
Metallization: H = Silver (Anode) - Silver (Cathode)
Probed Uncut Die
Outline Table
All dimensions are in millimeters
2
IR210DG..HCB Series
Bulletin I0133J 05/99
Wafer Layout
TOP VIEW
N° 208 Basic Cells
All dimensions are in millimeters
3
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