IR2110-2PBF [INFINEON]
HIGH AND LOW SIDE DRIVER; 高端和低端驱动器
| 型号： | IR2110-2PBF |
| 厂家： | 
Infineon |
| 描述： | HIGH AND LOW SIDE DRIVER |
| 文件： | 总18页 (文件大小：328K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD60147 rev.
U
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
HIGH AND LOW SIDE DRIVER
Features
Product Summary
• Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
dV/dt immune
V
(IR2110) 500V max.
OFFSET
(IR2113) 600V max.
I +/-
O
2A / 2A
10 - 20V
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible
V
OUT
Separate logic supply range from 3.3V to 20V
t
(typ.)
120 & 94 ns
on/off
Logic and power ground 5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Cycle by cycle edge-triggered shutdown logic
• Matched propagation delay for both channels
• Outputs in phase with inputs
Delay Matching (IR2110) 10 ns max.
(IR2113) 20ns max.
Packages
Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and
IGBT drivers with independent high and low side referenced output chan-
nels. Proprietary HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL output, down to 3.3V logic. The output
drivers feature a high pulse current buffer stage designed for minimum
16-Lead SOIC
IR2110S/IR2113S
14-Lead PDIP
IR2110/IR2113
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 500 or 600 volts.
Typical Connection
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(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
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1
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in Figures 28 through 35.
Symbol
Definition
High side floating supply voltage (IR2110)
(IR2113)
Min.
-0.3
Max.
525
Units
V
B
-0.3
625
V
S
High side floating supply offset voltage
High side floating output voltage
Low side fixed supply voltage
Low side output voltage
V
- 25
V
+ 0.3
+ 0.3
25
B
B
V
HO
V
S
- 0.3
V
B
V
CC
-0.3
-0.3
-0.3
V
V
LO
V
+ 0.3
CC
V
DD
Logic supply voltage
V
+ 25
+ 0.3
+ 0.3
SS
CC
DD
V
Logic supply offset voltage
V
- 25
V
V
SS
CC
V
Logic input voltage (HIN, LIN & SD)
Allowable offset supply voltage transient (figure 2)
V
- 0.3
IN
SS
dV /dt
s
—
50
V/ns
W
P
D
Package power dissipation @ T ≤ +25°C
A
(14 lead DIP)
—
—
—
—
—
-55
—
1.6
1.25
75
(16 lead SOIC)
(14 lead DIP)
(16 lead SOIC)
R
Thermal resistance, junction to ambient
THJA
°C/W
100
150
150
300
T
J
Junction temperature
°C
T
S
Storage temperature
T
L
Lead temperature (soldering, 10 seconds)
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V and V offset ratings are tested with all supplies biased at 15V differential. Typical
S SS
ratings at other bias conditions are shown in figures 36 and 37.
Symbol
Definition
High side floating supply absolute voltage
High side floating supply offset voltage
Min.
Max.
Units
V
B
V
S
+ 10
V + 20
S
V
S
(IR2110)
(IR2113)
Note 1
500
Note 1
600
V
High side floating output voltage
Low side fixed supply voltage
Low side output voltage
V
S
V
B
HO
V
10
0
20
CC
V
V
VCC
LO
V
Logic supply voltage
V
+ 3
V
+ 20
SS
DD
SS
V
Logic supply offset voltage
Logic input voltage (HIN, LIN & SD)
Ambient temperature
-5 (Note 2)
5
SS
V
V
V
DD
IN
SS
T
A
-40
125
°C
Note 1: Logic operational for V of -4 to +500V. Logic state held for V of -4V to -V . (Please refer to the Design Tip
S S BS
DT97-3 for more details).
Note 2: When V < 5V, the minimum V offset is limited to -V
DD.
DD
SS
2
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IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
Dynamic Electrical Characteristics
V
(V , V , V ) = 15V, C = 1000 pF, T = 25°C and V
= COM unless otherwise specified. The dynamic
BIAS
CC BS DD
L
A
SS
electrical characteristics are measured using the test circuit shown in Figure 3.
Symbol
Definition
Turn-on propagation delay
Turn-off propagation delay
Shutdown propagation delay
Turn-on rise time
Figure Min. Typ. Max. Units Test Conditions
t
7
8
—
—
—
—
—
120
94
150
125
140
35
V = 0V
S
on
t
V
V
= 500V/600V
= 500V/600V
off
S
t
sd
9
110
25
S
ns
t
r
10
11
t
f
Turn-off fall time
17
25
MT
Delay matching, HS & LS
turn-on/off
(IR2110)
(IR2113)
—
—
—
—
—
—
10
20
Static Electrical Characteristics
V
(V , V , V ) = 15V, T = 25°C and V = COM unless otherwise specified. The V , V and I parameters
BIAS CC BS DD
A
SS
IN TH
IN
are referenced to V and are applicable to all three logic input leads: HIN, LIN and SD. The V and I parameters are
SS
O
O
referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
Definition
Figure Min. Typ. Max. Units Test Conditions
V
Logic “1” input voltage
12
13
14
15
16
17
18
19
20
9.5
—
—
—
—
—
—
—
—
—
—
—
6.0
1.2
0.1
50
IH
V
IL
Logic “0” input voltage
V
V
OH
High level output voltage, V
Low level output voltage, V
- V
—
I
I
= 0A
= 0A
BIAS
O
O
V
OL
—
O
O
I
Offset supply leakage current
—
V =V = 500V/600V
B S
LK
I
Quiescent V supply current
BS
125
180
15
20
230
340
30
V
= 0V or V
QBS
IN
IN
IN
DD
DD
DD
I
Quiescent V
Quiescent V
supply current
supply current
V
V
= 0V or V
= 0V or V
QCC
CC
DD
µA
I
QDD
I
Logic “1” input bias current
Logic “0” input bias current
40
V
= V
IN DD
IN+
I
21
22
—
—
1.0
9.7
V
IN
= 0V
IN-
V
V
supply undervoltage positive going
BS
7.5
8.6
BSUV+
threshold
V
V
supply undervoltage negative going
23
24
25
26
27
7.0
7.4
7.0
2.0
2.0
8.2
8.5
8.2
2.5
2.5
9.4
9.6
9.4
—
BSUV-
BS
threshold
V supply undervoltage positive going
CC
V
CCUV+
V
threshold
V supply undervoltage negative going
CC
V
CCUV-
threshold
I
Output high short circuit pulsed current
V
O
= 0V, V = V
IN DD
O+
PW ≤ 10 µs
= 15V, V = 0V
O IN
A
I
O-
Output low short circuit pulsed current
—
V
PW ≤ 10 µs
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3
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
Functional Block Diagram
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Lead Definitions
Symbol Description
V
Logic supply
DD
HIN
SD
Logic input for high side gate driver output (HO), in phase
Logic input for shutdown
LIN
Logic input for low side gate driver output (LO), in phase
Logic ground
V
SS
V
B
High side floating supply
HO
High side gate drive output
High side floating supply return
Low side supply
V
S
V
CC
LO
Low side gate drive output
COM
Low side return
4
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IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
Lead Assignments
14 Lead PDIP
16 Lead SOIC (Wide Body)
IR2113S
IR2110S/
IR2110/IR2113
14 Lead PDIP w/o leads 4 & 5
14 Lead PDIP w/o lead 4
IR2110-2/IR2113-2
IR2110-1/IR2113-1
Part Number
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5
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
HV = 10 to 500V/600V
+
V
=15V
cc
10KF6
6
10
0.1
200
100µF
0.1
µF
µF
µH
10KF6
9
3
2
µF
5
7
10
HO
10KF6
dV
dt
S
11
12
1
>50 V/ns
OUTPUT
MONITOR
13
IRF820
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test Circuit
V
=15V
cc
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V
ꢀꢁꢂ
ꢏꢁꢂ
B
10
0.1
+
µF
µF
10
0.1
15V
9
3
2
6
µF
µF
-
V
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ꢆ
ꢠ
ꢆ
5
7
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ꢇꢠꢠ
ꢋ
S
10
C
HIN
L
(0 to 500V/600V)
HO
LO
10
$ꢉ#
$ꢉ#
SD
11
12
1
µF
LIN
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C
L
13
%ꢉ#
%ꢉ#
Figure 3. Switching Time Test Circuit
Figure 4. Switching Time Waveform Definition
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Figure 5. Shutdown Waveform Definitions
Figure 6. Delay Matching Waveform Definitions
6
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IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
250
200
150
100
50
250
200
Max.
Typ.
150
Max.
Typ.
100
50
0
0
-50
-25
0
25
50
75
100
125
10
12
14
16
VCC/VBS Supply Voltage (V)
18
20
Temperature (°C)
Figure 7A. Turn-On Time vs. Temperature
Figure 7B. Turn-On Time vs. VCC/VBS Supply Voltage
250
250
Max .
200
200
150
Typ
.
150
100
50
Max.
100
Typ.
50
0
0
-50
-25
0
25
50
75
100
125
0
2
4
6
8
10 12 14 16 18 20
Temperature (°C)
VDD Supply Voltage (V)
Figure 8A. Turn-Off Time vs. Temperature
Figure 7C. Turn-On Time vs. VDD Supply Voltage
250
200
250
200
.
Max
Max.
150
100
50
150
Typ.
100
Typ
50
0
0
0
2
4
6
8 10 12 14 16 18 20
VDD Supply Voltage (V)
10
12
14
16
VCC/VBS Supply Voltage (V)
18
20
Figure 8B. Turn-Off Time vs. VCC/VBS Supply Voltage
Figure 8C. Turn-Off Time vs. VDD Supply Voltage
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7
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
250
200
150
100
50
250
200
150
100
50
Max.
Typ.
Max.
Typ.
0
0
-50
-25
0
25
50
75
100
125
10
12
14
16
VCC/VBS Supply Voltage (V)
18
20
Temperature (°C)
Figure 9B. Shutdown Time vs. VCC/VBS Supply Voltage
Figure 9A. Shutdown Time vs. Temperature
250
100
80
200
150
100
50
Max.
Typ
60
40
M ax.
Typ.
20
0
0
0
2
4
6
8
10 12 14 16 18 20
-50
-25
0
25
50
75
100
125
VDD Supply Voltage (V)
Temperature (°C)
Figure 10A. Turn-On Rise Time vs. Temperature
Figure 9C. Shutdown Time vs. VDD Supply Voltage
100
80
50
40
60
30
Max.
Max.
40
20
Typ.
Typ.
20
10
0
0
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
VBIAS Supply Voltage (V)
Temperature (°C)
Figure 11A. Turn-Off Fall Time vs. Temperature
Figure 10B. Turn-On Rise Time vs. Voltage
8
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IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
50
40
30
20
10
0
15.0
12.0
Max
9.0
6.0
3.0
Max.
Typ.
0.0
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
V
BIAS Supply Voltage (V)
Temperature (°C)
Figure 11B. Turn-Off Fall Time vs. Voltage
Figure 12A. Logic “1” Input Threshold vs. Tempera-
ture
15
15.0
12
9
12.0
9.0
Max.
Max.
Min.
6
6.0
3.0
0.0
3
0
0
2
4
6
VDD Logic Supply Voltage (V)
8
10 12 14 16 18 20
-50
-25
0
25
50
75
100
125
Temperature (°C)
Figure 12B. Logic “1” Input Threshold vs. Voltage
Figure 13A. Logic “0” Input Threshold vs. Tempera-
ture
15
12
9
5.00
4.00
3.00
2.00
Min
.
6
3
0
Max.
1.00
0.00
0
2
4
6 10 12 14 16 18 20
VDD Logic Supply Voltage (V)
8
-50
-25
0
25
50
75
100
125
Temperature (°C)
Figure 14A. High Level Output vs. Temperature
Figure 13B. Logic “0” Input Threshold vs. Voltage
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IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
5.00
4.00
3.00
2.00
1.00
0.00
1.00
0.80
0.60
0.40
0.20
0.00
M ax.
Max.
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
V
BIAS Supply Voltage (V)
Temperature (°C)
Figure 14B. High Level Output vs. Voltage
Figure 15A. Low Level Output vs. Temperature
1.00
0.80
0.60
0.40
0.20
0.00
500
400
300
200
100
M ax.
Max.
0
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
V
BIAS Supply Voltage (V)
Temperature (°C)
Figure 15B. Low Level Output vs. Voltage
Figure 16A. Offset Supply Current vs. Temperature
500
500
400
300
400
300
200
100
0
Max.
200
Typ.
Max.
100
0
0
100
200
V
300
400
500
IR2110
600
IR2113
-50
-25
0
25
50
75
100
125
B Boost Voltage (V)
Temperature (°C)
Figure 16B. Offset Supply Current vs. Voltage
Figure 17A. VBS Supply Current vs. Temperature
10
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IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
625
500
375
500
400
300
200
100
0
Max.
250
Max.
Typ.
Typ.
125
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (°C)
V
BS Floating Supply Voltage (V)
Figure 18A. VCC Supply Current vs. Temperature
Figure 17B. VBS Supply Current vs. Voltage
625
100
80
500
375
250
125
0
60
40
Max.
Typ.
Max.
20
Typ.
0
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
VCC Fixed Supply Voltage (V)
Temperature (°C)
Figure 18B. VCC Supply Current vs. Voltage
Figure 19A. VDD Supply Current vs. Temperature
100
80
60
50
40
30
20
10
0
60
40
Max.
20
Typ.
0
0
2
4
6
VDD Logic Supply Voltage (V)
8
10 12 14 16 18 20
-50
-25
0
25
50
75
100
125
Temperature (°C)
Figure 20A. Logic “1” Input Current vs. Temperature
Figure 19B. VDD Supply Current vs. VDD Voltage
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11
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
60
50
40
30
20
10
0
5.00
4.00
3.00
2.00
1.00
0.00
Max.
0
2
4
6
VDD Logic Supply Voltage (V)
8
10 12 14 16 18 20
-50
-25
0
25
50
75
100
125
Temperature (°C)
Figure 20B. Logic “1” Input Current vs. VDD Voltage
Figure 21A. Logic “0” Input Current vs. Temperature
5
4
3
2
1
0
11.0
10.0
Max.
9.0
Typ.
8.0
Min.
7.0
6.0
0
2
4
6
VDD Logic Supply Voltage (V)
8
10 12 14 16 18 20
-50
-25
0
25
50
75
100
125
Temperature (°C)
Figure 21B. Logic “0” Input Current vs. VDD Voltage
Figure 22. VBS Undervoltage (+) vs. Temperature
11.0
11.0
10.0
10.0
Max.
Max.
9.0
9.0
Typ.
Typ.
8.0
8.0
Min.
7.0
7.0
Min.
6.0
6.0
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Temperature (°C)
Temperature (°C)
Figure 24. VCC Undervoltage (+) vs. Temperature
Figure 23. VBS Undervoltage (-) vs. Temperature
12
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IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
11.0
10.0
9.0
5.00
4.00
Max.
Typ.
Min.
Typ.
3.00
Min.
2.00
8.0
1.00
7.0
0.00
6.0
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Temperature (°C)
Temperature (°C)
Figure 26A. Output Source Current vs. Temperature
Figure 25. VCC Undervoltage (-) vs. Temperature
5.00
5.00
4.00
3.00
4.00
Typ.
3.00
Min.
2.00
2.00
Typ.
1.00
1.00
0.00
Min.
0.00
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
V
BIAS Supply Voltage (V)
Temperature (°C)
Figure 26B. Output Source Current vs. Voltage
Figure 27A. Output Sink Current vs. Temperature
320V
5.00
4.00
3.00
150
125
140V
100
75
2.00
10V
Typ.
50
1.00
Min.
25
0
0.00
10
12
14
16
18
20
1E+2
1E+3
1E+4
Frequency (Hz)
1E+5
1E+6
V
BIAS Supply Voltage (V)
Figure 27B. Output Sink Current vs. Voltage
Figure 28. IR2110/IR2113 TJ vs. Frequency
(IRFBC20) RGATE = 33Ω, VCC = 15V
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13
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
320V
320V
140V
150
125
100
75
150
125
100
75
140V
10V
10V
50
50
25
25
0
0
1E+2
1E+3
1E+4
Frequency (Hz)
1E+5
1E+6
1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Figure 29. IR2110/IT2113 TJ vs. Frequency
Figure 30. IR2110/IR2113 TJ vs. Frequency
(IRFBC30) RGATE = 22Ω, VCC = 15V
(IRFBC40) RGATE = 15Ω, VCC = 15V
320V
140V
10V
320V
140V
150
150
125
100
75
50
25
0
125
100
75
50
25
0
10V
1E+2
1E+3
1E+4
1E+5
1E+6
1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 31. IR2110/IR2113 TJ vs. Frequency
Figure 32. IR2110S/IR2113S TJ vs. Frequency
(IRFPE50) RGATE = 10Ω, VCC = 15V
(IRFBC20) RGATE = 33Ω, VCC = 15V
320V 140V
320V 140V
150
125
100
75
150
125
100
75
10V
10V
50
50
25
25
0
0
1E+2
1E+3
1E+4
1E+5
1E+6
1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 34. IR2110S/IR2113S TJ vs. Frequency
Figure 33. IR2110S/IR2113S TJ vs. Frequency
(IRFBC30)
GATE = 22Ω, VCC = 15V
(IRFBC40) RGATE = 15Ω, VCC = 15V
R
14
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IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
320V 140V 10V
150
125
100
75
0.0
-2.0
Typ.
-4.0
-6.0
50
-8.0
25
-10.0
0
10
12
14
16
18
20
1E+2
1E+3
1E+4
1E+5
1E+6
VBS Floating Supply Voltage (V)
Frequency (Hz)
Figure 35. IR2110S/IR2113S TJ vs. Frequency
Figure 36. Maximum VS Negative Offset vs.
VBS Supply Voltage
(IRFPE50) RGATE = 10Ω, VCC = 15V
20.0
16.0
12.0
8.0
Typ.
4.0
0.0
10
12
14
16
18
20
VCC Fixed Supply Voltage (V)
Figure 37. Maximum VSS Positive Offset vs.
VCC Supply Voltage
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15
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
Case Outlines
01-6010
01-3002 03 (MS-001AC)
14-Lead PDIP
01-6010
14-Lead PDIP w/o Lead 4
01-3008 02 (MS-001AC)
16
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IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
01-6015
16 Lead PDIP w/o Leads 4 & 5
01-3010 02
01 6015
01-3014 03 (MS-013AA)
16-Lead SOIC (wide body)
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17
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
LEADFREE PART MARKING INFORMATION
Part number
Date code
IRxxxxxx
YWW?
IR logo
?XXXX
Pin 1
Identifier
Lot Code
(Prod mode - 4 digit SPN code)
?
MARKING CODE
P
Lead Free Released
Non-Lead Free
Released
Assembly site code
ORDER INFORMATION
Part only available Lead Free
14-Lead PDIP IR2110 order IR2110PbF
14-Lead PDIP IR2110-1 order IR2110-1PbF
14-Lead PDIP IR2110-2 order IR2110-2PbF
14-Lead PDIP IR2113 order IR2113PbF
14-Lead PDIP IR2113-1 order IR2113-1PbF
14-Lead PDIP IR2113-2 order IR2113-2PbF
16-Lead SOIC IR2110S order IR2110SPbF
16-Lead SOIC IR2113S order IR2113SPbF
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
This product has been qualified per industrial level
Data and specifications subject to change without notice 3/23/2005
18
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