IR2110E4 [INFINEON]
HIGH AND LOW SIDE DRIVER; 高端和低端驱动器型号: | IR2110E4 |
厂家: | Infineon |
描述: | HIGH AND LOW SIDE DRIVER |
文件: | 总14页 (文件大小:129K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 60086B
IR2110E4
HIGH AND LOW SIDE DRIVER
Features
Product Summary
n Floating channel designed for bootstrap
operation
Fully operational to +400V
Tolerant to negative transient voltage
dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for both channels
n Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n CMOS Schmitt-triggered inputs with pull-down
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels
n Outputs in phase with inputs
V
400V max.
2A / 2A
OFFSET
I +/-
O
V
OUT
10 - 20V
120 & 94 ns
10 ns
t
(typ.)
on/off
Delay Matching
Description
The IR2110E4 is a high voltage, high speed power MOSFET
and IGBT driver with independent high and low side refer-
enced output channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic construc-
tion. Logic inputs are compatible with standard CMOS or
LSTTL outputs. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-con-
duction. Propagation delays are matched to simplify use in
high frequency applications. The floating channel can be
used to drive an N-channel power MOSFET or IGBT in the
high side configuration which operates up to 400 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissi-
pation ratings are measured under board mounted and still air conditions. Additional information is shown
in Figures 28 through 35.
Symbol
Parameter
Min.
-0.5
—
Max.
V + 20
S
400
V + 0.5
B
20
V + 0.5
CC
Units
V
B
V
S
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Output Voltage
V
HO
V
-0.5
S
V
V
Low Side Fixed Supply Voltage
Low Side Output Voltage
-0.5
-0.5
-0.5
CC
V
LO
V
DD
Logic Supply Voltage
V
V
+ 20
+ 0.5
+ 0.5
SS
V
SS
Logic Supply Offset Voltage
V
- 20
CC
SS
CC
DD
V
IN
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Fig. 16)
V
- 0.5
V
dV /dt
S
—
50
V/ns
W
°C/W
P
Package Power Dissipation @ T ≤ = 25°C (Fig. 19)
—
—
1.6
125
125
150
D
A
R
Thermal Resistance, Junction to Ambient
Junction Temperature
thJA
T
-55
-55
j
°C
g
T
Storage Temperature
S
T
Package Mounting Surface Temperature
Weight
300 (for 5 seconds)
0.45 (typical)
L
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1
4/19/99
IR2110E4
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be
used within the recommended conditions. The V and V
offset ratings are tested with all supplies
S
SS
biased at 15V differential. Typical ratings at other bias conditions are shown in Figures 36 and 37.
Symbol
Parameter
Min.
+ 10
Max.
+ 20
Units
V
V
High Side Floating Supply Absolute Voltage
V
V
S
B
S
High Side Floating Supply Offset Voltage
High Side Output Voltage
-4
400
V
B
20
S
V
V
V
S
HO
Low Side Fixed Supply Voltage
Low Side Output Voltage
10
V
CC
V
0
V
LO
CC
+ 20
V
Logic Supply Voltage
V
+ 5
SS
-5
V
SS
DD
V
SS
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
5
V
V
SS
V
DD
IN
Dynamic Electrical Characteristics
V
(V , V , V ) = 15V, C = 1000 pF, T = 25°C andV
= COM unless otherwise
SS
BIAS CC BS DD
L
A
specified.The dynamic electrical characteristics are measured using the test circuit shown
in Figure 3.
Tj = -55 to
125°C
Tj = 25°C
Symbol Parameter
Min Typ. Max. Min. Max Units
Test Conditions
t
Turn-On Propagation Delay
Turn-Off Propagation Delay
Shutdown Propagation Delay
Turn-On Rise Time
—
—
—
—
—
—
120 150
94 125
110 140
—
—
—
—
—
—
260
220
235
50
V
= 0V
on
S
S
S
t
t
V
V
= 400V
= 400V
off
sd
nS
t
r
t
25
17
—
35
25
10
C = 1000pf
L
C = 1000pf
L
Turn-Off Fall Time
40
f
Mt
Delay Matching, HS & LS Turn-On/Off
—
Ht -Lt
on on
Ht -Lt
/
off off
Typical Connection
up to 00V
4
HO
VB
VDD
HIN
SD
VDD
HIN
SD
VS
TO
LOAD
LIN
VSS
VCC
COM
LO
LIN
VSS
VCC
2
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IR2110E4
Static Electrical Characteristics
V
(V , V , V ) = 15V, T = 25°C and V
= COM unless otherwise specified.The V , V and
IN TH
BIAS CC BS DD SS
A
I
parameters are referenced to V
and are applicable to all three logic input leads: HIN, LIN and SD.
IN
SS
The V and I parameters are referenced to COM and are applicable to the respective output leads: HO or
O
O
LO.
Tj = -55 to
125°C
Tj = 25°C
Symbol
Parameter
Min Typ. Max. Min. Max Units
Test Conditions
V
V
Logic “1” Input Voltage
Logic “0” Input Voltage
High Level Output Voltage, V
9.5
—
—
—
—
6
10
—
—
—
V
V
= 15V
= 15V
IH
DD
5.7
1.5
IL
DD
V
V
OH
- V
O
—
0.7 1.2
V
= V , I = 0A
IN IH O
BIAS
V
Low Level Output Voltage, VO
Offset Supply Leakage Current
—
—
—
—
—
—
—
—
—
0.1
50
—
—
—
—
—
—
—
—
0.1
250
500
600
60
V
= V , I = 0A
IL O
OL
IN
B
I
I
V
= V = 400V
LK
QBS
S
Quiescent V
Quiescent V
Quiescent V
Supply Current
Supply Current
Supply Current
125 230
180 340
V
= V or V
IH
BS
CC
DD
IN
IN
IL
IL
I
V
= V or V
IH
QCC
µA
I
5
30
40
1
V
= V or V
IH IL
QDD
IN
V
I
Logic “1” Input Bias Current
Logic “0” Input Bias Current
15
—
70
= 15V
= 0V
IN+
IN-
IN
I
10
V
IN
V
V
BS
Supply Undervoltage Positive
7.5 8.7 9.7
—
BSUV+
Going Threshold
Supply Undervoltage Negative
V
V
BS
7.0 8.3 9.4
7.4 8.6 9.6
7.0 8.2 9.4
—
—
—
—
—
—
—
—
—
—
BSUV-
Going Threshold
V Supply Undervoltage Positive
CC
Going Threshold
V Supply Undervoltage Negative
CC
V
A
V
CCUV+
V
CCUV-
Going Threshold
I
Output High Short Circuit Pulsed
Current
Output Low Short Circuit Pulsed
Current
2
2
—
—
—
—
V
V
= 0V, V = 15V
IN
O+
OUT
µs
PW < = 10
I
O-
= 15V, V = 0V
IN
OUT
µs
PW < = 10
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IR2110E4
4
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test Circuit
4
8
50%
t
50%
11
13
HIN
LIN
6
9
4
14
15
t
t
t
f
on
off
r
1
90%
90%
17
2
HO
LO
10%
10%
Figure 3. Switching Time Test Circuit
Figure 4. Switching Time Waveform Definition
50%
50%
HIN
LIN
SD
LO
HO
50%
10%
t
sd
MT
MT
HO
LO
90%
90%
LO
HO
Figure 3. Shutdown Waveform Definitions
Figure 6. Delay Matching Waveform Definitions
4
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IR2110E4
250
200
150
100
50
250
200
150
100
50
Max.
Typ.
Max.
Typ.
0
0
-50
-25
0
25
50
75
100
125
125
125
10
12
14
16
18
20
20
20
Temperature (°C)
VBIAS Supply Voltage (V)
Figure 7A. Turn-On Time vs. Temperature
Figure 7B. Turn-On Time vs. Voltage
250
200
150
100
50
250
200
150
100
50
Max.
Typ.
Max.
Typ.
0
0
-50
-25
0
25
50
75
100
10
12
14
16
18
Temperature (°C)
VBIAS Supply Voltage (V)
Figure 8A. Turn-Off Time vs. Temperature
Figure 8B. Turn-Off Time vs. Voltage
250
200
150
100
50
250
200
150
100
50
Max.
Typ.
Max.
Typ.
0
0
-50
-25
0
25
50
75
100
10
12
14
16
18
Temperature (°C)
VBIAS Supply Voltage (V)
Figure 9A. Shutdown Time vs. Temperature
Figure 9B. Shutdown Time vs. Voltage
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IR2110E4
100
100
80
60
40
20
0
80
60
Max.
Typ.
40
Max.
Typ.
20
0
-50
-25
0
25
50
75
100
125
125
125
10
12
14
16
18
20
Temperature (°C)
VBIAS Supply Voltage (V)
Figure 10A. Turn-On Rise Time vs. Temperature
Figure 10B. Turn-On Rise Time vs. Voltage
50
50
40
30
20
10
0
40
30
20
10
0
Max.
Typ.
Max.
Typ.
-50
-25
0
25
50
75
100
10
12
14
16
18
20
Temperature (°C)
VBIAS Supply Voltage (V)
Figure 11A. Turn-Off Fall Time vs. Temperature
Figure 11B. Turn-Off Fall Time vs. Voltage
15.0
15.0
12.0
9.0
12.0
9.0
6.0
3.0
0.0
Min.
6.0
Min.
3.0
0.0
-50
-25
0
25
50
75
100
5
7.5
10
12.5
15
17.5
20
Temperature (°C)
VDD Logic Supply Voltage (V)
Figure 12A. Logic “1” Input Threshold vs. Temperature
Figure 12B. Logic “1” Input Threshold vs. Voltage
6
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IR2110E4
15.0
12.0
9.0
15.0
12.0
9.0
Max.
6.0
6.0
3.0
3.0
Max.
0.0
0.0
-50
-25
0
25
50
75
100
125
5
7.5
10
12.5
15
17.5
20
Temperature (°C)
VDD Logic Supply Voltage (V)
Figure 13A. Logic “0” Input Threshold vs. Temperature
Figure 13B. Logic “0” Input Threshold vs. Voltage
5.00
4.00
3.00
2.00
5.00
4.00
3.00
2.00
1.00
0.00
Max.
Max.
1.00
0.00
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (°C)
VBIAS Supply Voltage (V)
Figure 14A. High Level Output vs. Temperature
Figure 14B. High Level Output vs. Voltage
15.0
12.0
9.0
1.00
0.80
0.60
0.40
0.20
0.00
6.0
Min.
3.0
Max.
0.0
-50
-25
0
25
50
75
100
125
5
7.5
10
12.5
15
17.5
20
Temperature (°C)
VDD Logic Supply Voltage (V)
Figure 15A. Low Level Output vs. Temperature
Figure 15B. Low Level Output vs. Voltage
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IR2110E4
500
400
300
200
100
500
400
300
200
100
0
Max.
Max.
0
-50
-25
0
25
50
75
100
125
0
100
200
300
400
500
Temperature (°C)
VB Boost Voltage (V)
Figure 16A. Offset Supply Current vs. Temperature
Figure 16B. Offset Supply Current vs. Voltage
500
400
300
500
400
300
200
100
0
Max.
200
Max.
Typ.
Typ.
100
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (°C)
VBS Floating Supply Voltage (V)
Figure 17A. VBS Supply Current vs. Temperature
Figure 17B. VBS Supply Current vs. Voltage
625
500
375
250
125
0
625
500
375
Max.
250
Max.
Typ.
Typ.
125
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (°C)
VCC Fixed Supply Voltage (V)
Figure 18A. VCC Supply Current vs. Temperature
Figure 18B. VCC Supply Current vs. Voltage
8
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IR2110E4
100
80
60
40
20
0
100
80
60
40
20
0
Max.
Typ.
Max.
Typ.
-50
-25
0
25
50
75
100
125
5
7.5
10
12.5
15
17.5
20
Temperature (°C)
VDD Logic Supply Voltage (V)
Figure 19A. VDD Supply Current vs. Temperature
Figure 19B. VDD Supply Current vs. Voltage
100
80
100
80
60
40
20
0
60
40
Max.
Max.
Typ.
20
Typ.
0
5
7.5
10
12.5
15
17.5
20
-50
-25
0
25
50
75
100
125
VDD Logic Supply Voltage (V)
Temperature (°C)
Figure 20A. Logic “1” Input Current vs. Temperature
Figure 20B. Logic “1” Input Current vs. Voltage
5.00
4.00
3.00
2.00
5.00
4.00
3.00
2.00
1.00
0.00
Max.
Max.
1.00
0.00
-50
-25
0
25
50
75
100
125
5
7.5
10
12.5
15
17.5
20
Temperature (°C)
VDD Logic Supply Voltage (V)
Figure 21A. Logic “0” Input Current vs. Temperature
Figure 21B. Logic “0” Input Current vs. Voltage
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IR2110E4
11.0
11.0
10.0
9.0
10.0
Max.
Max.
Typ.
Min.
9.0
Typ.
8.0
8.0
Min.
7.0
7.0
6.0
6.0
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Temperature (°C)
Temperature (°C)
Figure 22. VBS Undervoltage (+) vs. Temperature
Figure 23. VBS Undervoltage (-) vs. Temperature
11.0
11.0
10.0
Max.
10.0
9.0
8.0
7.0
6.0
Max.
Typ.
Min.
9.0
Typ.
8.0
Min.
7.0
6.0
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Temperature (°C)
Temperature (°C)
Figure 24. VCC Undervoltage (+) vs. Temperature
Figure 25. VCC Undervoltage (-) vs. Temperature
5.00
5.00
4.00
3.00
4.00
3.00
2.00
1.00
0.00
Typ.
Min.
2.00
Typ.
1.00
Min.
0.00
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (°C)
VBIAS Supply Voltage (V)
Figure 26A. Output Source Current vs. Temperature
Figure 26B. Output Source Current vs. Voltage
10
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IR2110E4
5.00
4.00
3.00
2.00
1.00
0.00
5.00
4.00
3.00
2.00
1.00
0.00
Typ.
Min.
Typ.
Min.
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (°C)
VBIAS Supply Voltage (V)
Figure 27A. Output Sink Current vs. Temperature
Figure 27B. Output Sink Current vs. Voltage
320V
320V
150
125
100
75
150
125
100
75
140V
140V
10V
10V
50
50
25
25
0
0
1E+2
1E+3
1E+4
1E+5
1E+6
1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 28. IR2110 TJ vs. Frequency (IRFBC20)
RGATE = 33W, VCC = 15V
Figure 29. IR2110 TJ vs. Frequency (IRFBC30)
RGATE = 22W, VCC = 15V
320V
140V
320V
140V
150
150
125
100
75
50
25
0
125
100
75
50
25
0
10V
10V
1E+2
1E+3
1E+4
1E+5
1E+6
1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 30. IR2110 TJ vs. Frequency (IRFBC40)
RGATE = 15W, VCC = 15V
Figure 31. IR2110 TJ vs. Frequency (IRFPE50)
RGATE = 10W, VCC = 15V
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IR2110E4
320V
140V
320V 140V
150
125
100
75
150
125
100
75
10V
10V
50
50
25
25
0
0
1E+2
1E+3
1E+4
1E+5
1E+6
1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 32. IR2110S TJ vs. Frequency (IRFBC20)
RGATE = 33W, VCC = 15V
Figure 33. IR2110S TJ vs. Frequency (IRFBC30)
RGATE = 22W, VCC = 15V
320V 140V
320V 140V 10V
150
125
100
75
150
125
100
75
10V
50
50
25
25
0
0
1E+2
1E+3
1E+4
1E+5
1E+6
1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 34. IR2110S TJ vs. Frequency (IRFBC40)
RGATE = 15W, VCC = 15V
Figure 35. IR2110S TJ vs. Frequency (IRFPE50)
RGATE = 10W, VCC = 15V
0.0
20.0
16.0
12.0
-2.0
Typ.
-4.0
-6.0
8.0
Typ.
-8.0
4.0
0.0
-10.0
10
12
14
16
18
20
10
12
14
16
18
20
VBS Floating Supply Voltage (V)
VCC Fixed Supply Voltage (V)
Figure 36. Maximum VS Negative Offset vs.
VBS Supply Voltage
Figure 37. Maximum VSS Positive Offset vs.
VCC Supply Voltage
12
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IR2110E4
Functional Block Diagram
VB
UV
VDD
DETECT
R
R
S
Q
HV
LEVEL
SHIFT
HO
PULSE
FILTER
R
Q
S
VDD/VCC
LEVEL
SHIFT
HIN
SD
PULSE
GEN
VS
VCC
UV
DETECT
VDD/VCC
LEVEL
SHIFT
LIN
VSS
LO
S
R
Q
DELAY
COM
Lead Definitions
Lead
Symbol Description
V
DD
Logic supply
HIN
SD
Logic input for high side gate driver output (HO), in phase
Logic input for shutdown
LIN
Logic input for low side gate driver output (LO), in phase
Logic ground
V
V
SS
High side floating supply
B
HO
High side gate drive output
High side floating supply return
Low side supply
V
V
S
CC
LO
Low side gate drive output
COM
Low side return
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IR2110E4
Case Outline and Dimensions — Leadless Chip Carrier (LCC) Package
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
4/99
14
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