IR2128C [INFINEON]
Buffer/Inverter Based MOSFET Driver, CMOS,;
| 型号： | IR2128C |
| 厂家： | 
Infineon |
| 描述： | Buffer/Inverter Based MOSFET Driver, CMOS, |
| 文件： | 总17页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD65003
IR2127C/IR2128C/IR21271C
CURRENT SENSING SINGLE CHANNEL DRIVERDIE IN
WAFER FORM
Features
c
100 % Tested at Probe
•
•
•
d
Available in Chip Pack, Unsawn Wafer, Sawn on Film
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage dV/dt immune
Application- specific gate drive range: Motor Drive: 12 to 20V (IR2127/IR2128)
Automotive: 9 to 20V (IR21271)
•
Undervoltage lockout
3.3V, 5V and 15V input logic compatible
•
•
•
•
FAULT
lead indicates shutdown has occured
Output in phase with input (IR2127/IR21271)
Output out of phase with input (IR2128)
•
Typical Connection
VCC
IN
VCC
VB
HO
CS
VS
IN
FAULT
FAULT
COM
VCC
IN
VCC
VB
HO
CS
VS
IR2127/IR21271
IN
(Refer to the Die Outlines for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
FAULT
FAULT
COM
IR2128
Notes:
c This IR product is100% tested at wafer level and is manufactured using established, mature and well characterized
processes. Due to restrictions in die level processing, die may not be equivalent to standard package products and are
therefore offered with a conditional performance guarantee. The above data sheet is based on IR sample testing under
certain predetermined and assumed conditions, and are provided for illustration purposes only. Customers are encouraged
to perform testing in actual proposed packaged and use conditions. IR die products are tested using IR-based quality
assurance procedures and are manufactured using IR’s established processes. Programs for customer-specified testing
are available upon request. IR has experienced assembly yields of generally 95% or greater for individual die; however,
customer’s results will vary. Estimates such as those described and set forth in this data sheet for semiconductor die will
vary depending on a number of packaging, handling, use and other factors. Sold die may not perform on an equivalent
basis to standard package products and are therefore offered with a limited warranty as described in IR’s applicable
standard terms and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale,
which are available upon request. For customers requiring a particular parameter to be guaranteed, special testing can be
carried out or product can be purchased as known good die.
d Part number shown is for die in wafer. Contact factory for these other options.
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1
IR2127C/IR2128C/IR21271C
Description
The IR2127/IR2128/IR21271(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible
with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over-current in the driven
power transistor and terminates the gate drive voltage. An open drain
signal is provided to indicate that
FAULT
an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for
minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in
the high side or low side configuration which operates up to 600 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under
board mounted and still air conditions.
Symbol
Definition
High Side Floating Supply Voltage
High Side Floating Offset Voltage
High Side Floating Output Voltage
Logic Supply Voltage
Min.
Max.
Units
V
-0.3
625
B
S
V
V
B
- 25
V
B
+ 0.3
V
V
V - 0.3
S
V
+ 0.3
25
HO
B
-0.3
-0.3
-0.3
V
CC
V
IN
Logic Input Voltage
V
V
+ 0.3
+ 0.3
+ 0.3
50
CC
V
FLT
FAULT Output Voltage
CC
V
CS
Current Sense Voltage
V
S
- 0.3
V
B
dV /dt
s
Allowable Offset Supply Voltage Transient
Junction Temperature
—
—
V/ns
°C
T
J
150
150
T
Storage Temperature
-55
S
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V offset rating is tested with all supplies biased at 15V differential.
S
Symbol
Definition
Min.
Max.
Units
V
High Side Floating Supply Voltage
(IR2127/IR2128)
(IR21271)
V
+ 12
V
+ 20
B
S
S
S
V
+ 9
V
+ 20
S
V
High Side Floating Offset Voltage
High Side Floating Output Voltage
Logic Supply Voltage
Note 1
600
S
V
HO
V
S
V
B
V
V
CC
10
0
20
V
IN
Logic Input Voltage
V
CC
V
FLT
FAULT Output Voltage
0
V
CC
V
Current Sense Signal Voltage
Ambient Temperature
V
V + 5
S
CS
S
T
-40
125
°C
A
Note 1: Logic operational for V of -5 to +600V. Logic state held for V of -5V to -V . (Please refer to the Design Tip
S
S
BS
DT97-3 for more details).
2
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IR2127C/IR2128C/IR21271C
Static Electrical Characteristics
V
(V , V ) = 15V and T = 25°C unless otherwise specified. The V , V and I parameters are referenced to
BIAS CC BS A IN TH IN
COM. The V and I parameters are referenced to V .
O
O
S
Symbol
Definition
Min. Typ. Max. Units Test Conditions
V
Logic “1” Input Voltage
Logic “0” Input Voltage
Logic “0” Input Voltage
Logic “1” Input Voltage
CS Input Positive
(IR2127/IR21271)
(IR2128)
IH
3.0
—
—
V
V
(IR2127/IR21271)
(IR2128)
IL
VCC = 10V to 20V
—
—
0.8
V
(IR2127/IR2128)
(IR21271)
180
—
—
—
—
—
—
—
—
—
—
250
1.8
—
320
—
mV
V
CSTH+
Going Threshold
V
OH
High Level Output Voltage, V
- VO
100
100
50
IO = 0A
IO = 0A
BIAS
mV
V
OL
Low Level Output Voltage, VO
Offset Supply Leakage Current
—
I
LK
—
V
V
= V = 600V
B
S
I
Quiescent V Supply Current
200
60
400
120
15
QBS
QCC
BS
= 0V or 5V
IN
I
Quiescent V Supply Current
CC
µA
I
Logic “1” Input Bias Current
Logic “0” Input Bias Current
“High” CS Bias Current
“High” CS Bias Current
7.0
—
V
V
= 5V
= 0V
= 3V
= 0V
IN+
IN
I
1.0
1.0
1.0
IN-
IN
I
—
V
V
CS+
CS
CS
I
—
CS-
V
V
Supply Undervoltage
(IR2127/IR2128)
(IR21271)
8.8
6.3
10.3
7.2
11.8
8.2
BSUV+
BS
Positive Going Threshold
Supply Undervoltage
V
(IR2127/IR2128)
(IR21271)
V
V
BS
7.5
6.0
9.0
6.8
10.6
7.7
BSUV-
Threshold
Negative Going
I
Output High Short Circuit Pulsed Current
Output Low Short Circuit Pulsed Current
FAULT - Low on Resistance
200
420
—
250
500
125
—
—
—
V = 0V, V = 5V
O IN
O+
PW ≤ 10 µs
mA
I
V
= 15V, V = 0V
O-
O
IN
PW ≤ 10 µs
Ron, FLT
Ω
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3
IR2127C/IR2128C/IR21271C
Functional Block Diagram IR2127/IR21271
VB
HO
VS
VCC
UV
DETECT
R
Q
HV
LEVEL
SHIFT
BUFFER
R
S
PULSE
FILTER
UP
SHIFTERS
IN
PULSE
GEN
VB
DELAY
PULSE
GEN
Q
R
S
FAULT
-
CS
DOWN
SHIFTER
+
PULSE
FILTER
Q
R
S
COM
Functional Block Diagram IR2128
VB
VCC
UV
DETECT
R
Q
5V
HV
LEVEL
SHIFT
BUFFER
HO
VS
R
S
PULSE
FILTER
UP
SHIFTERS
IN
PULSE
GEN
VB
DELAY
PULSE
GEN
Q
R
S
FAULT
-
CS
DOWN
SHIFTER
+
PULSE
FILTER
Q
R
S
COM
4
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IR2127C/IR2128C/IR21271C
Bonding Pad Definitions
Symbol
Description
VCC
IN
Logic and gate drive supply
Logic input for gate driver output (HO), in phase with HO (IR2127/IR21271)
out of phase with HO (IR2128)
Indicates over-current shutdown has occurred, negative logic
Logic ground
FAULT
COM
VB
High side floating supply
High side gate drive output
High side floating supply return
HO
VS
Current sense input to current sense comparator
CS
Nominal Front Metal Composition, Thickness
Wafer Diameter
Wafer Thickness
Al-Si (Si: 1.0% ± 0.1%), 2µm
125mm with std. <100> flat
625 ± 25µm
Minimum Street Width
0.006”
Reject Ink Dot Size
0.02” – 0.03”
Recommended Storage Environment
Store in original container, in dessicated
nitrogen, with no contamination.
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5
IR2127C/IR2128C/IR21271C
Device Information
Process & Design Rule
Transistor Count
Die Size
HVDCMOS 600V
206
77 x 85 (mils)
Die Outline
Thickness of Gate Oxide
Connections
800Å
Poly Silicon
4.0 µm
Material
Width
First
Layer
Spacing
Thickness
Material
Width
Spacing
Thickness
6.0 µm
5000Å
Al - Si (Si: 1.0% ±0.1%)
6.0 µm
Second
Layer
9.0 µm
20,000Å
Contact Hole Dimension
Insulation Layer
5 µm X 5 µm
PSG (SiO2)
1.6 µm
PSG (SiO2)
1.6 µm
Material
Thickness
Material
Passivation
Thickness
Method of Saw
Method of Die Bond
Wire Bond
Full Cut
Ablebond 84 - 1
Thermosonic
Au (1.3 mil)
Cu
Method
Material
Material
Die Area
Lead Plating
Types
Leadframe
Ag
70-90% Sn (Balance Pb)
8-Lead PDIP / 8-Lead SOIC
EME6300H, EM6600RA
Package
Materials
Remarks:
6
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IR2127C/IR2128C/IR21271C
0.077 + / — 0.008
Die Outline:
(in inches)
↓
8
1
2
7
5
6
3
4
↓
↑
y = 0.0000
y = -0.0084
y = -
↑
METAL EDGE
DIE EDGE
DATUM POINT
ON PAD
0.01136
Pad
#
Datum
Function
X
Y
1
2
3
4
5
6
7
8
VCC
IN
FLT
COM
VS
CS
HO
VB
-0.00004
0.0490
0.0378
0.0105
0.0000
-0.0010
0.0108
0.0288
0.0598
0.0000
-0.00004
0.0000
0.0574
0.0553
0.0574
0.0578
X and Y Tolerances +/- 0.0002
All pad sizes are 0.004 x 0.004 inches with tolerance of +/- 0.0002 inches. All units are in inches.
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7
IR2127C/IR2128C/IR21271C
IN
(IR2128)
50%
50%
50%
50%
IN
(IR2128)
IN
(IR2127/
IR21271)
IN
CS
(IR2127/
IR21271)
t
on
t
t
t
f
r
off
90%
90%
FAULT
HO
10%
10%
Figure 2. Switching Time Waveform Definition
HO
Figure 1. Input/Output Timing Diagram
IN
50%
(IR2128)
50%
IN
t
bl
(IR2127/
IR21271)
CS
90%
HO
FAULT
Figure 3. Start-up Blanking Time Waveform Definitions
V
CSTH
V
CSTH
CS
HO
CS
t
cs
t
flt
90%
90%
FAULT
Figure 4. CS Shutdown Waveform Definitions
Figure 5. CS to
Waveform Definitions
FAULT
8
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IR2127C/IR2128C/IR21271C
500
400
300
200
100
0
500
400
M ax.
300
M ax.
T yp
200
Typ.
100
0
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
o
VBIAS Supply Voltage (V)
Temperature ( C)
Figure 10B Turn-On Time vs. Supply Voltage
Figure 10A Turn-On Time vs. Temperature
500
400
300
350
300
250
200
150
100
50
M
ax
200
100
0
T yp .
0
-50
-25
0
25
50
75
100
125
0
2
4
6
8
10 12 14 16 18 20
o
InputV oltage (V)
Temperature ( C)
Figure 10C Turn-On Time vs. Input Voltage
Figure 11A Turn-Off Time vs. Temperature
400
350
300
250
500
400
300
200
100
0
Max
Typ
.
M
ax.
200
150
100
50
.
T yp .
0
10
12
14
16
18
20
0
2
4
6
8
10 12 14 16 18 20
VBIAS Supply Voltage (V)
Input Voltage (V)
Figure 11C Turn-OffTime vs. Input Voltage
Figure 11B Turn-Off Time vs. Supply Voltage
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9
IR2127C/IR2128C/IR21271C
500
400
300
200
100
0
500
400
300
200
M
ax.
Max
T yp .
100
Typ
0
10
12
14
16
18
20
-50
-25
0
25
50
o
75
100 125
Temperature ( C)
VBIAS Supply Voltage (V)
Figure 12A Turn-On Rise Time vs. Temperature
Figure 12B Turn-On Rise Time vs. Supply Voltage
200
150
100
200
150
100
Max.
M
ax.
50
0
Typ.
50
T yp
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
o
Temperature ( C)
VBIAS Supply Voltage (V)
Figure 13A Turn-Off Fall Time vs. Temperature
Figure 13B Turn-Off Fall Time vs. Voltage
1600
1400
1200
1000
1600
1400
1200
1000
800
600
400
200
0
M
ax.
M
ax.
T yp .
800
600
400
200
0
T yp
in .
M
in .
M
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
o
Temperature ( C)
Vcc Supply Voltage (V)
Figure 14B Start-Up Blanking Time
vs Voltage
Figure 14A Start-Up Blanking Time vs. Temperature
10
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IR2127C/IR2128C/IR21271C
500
500
400
300
200
100
0
M
A X .
400
300
200
100
0
M
ax
T yp .
T yp .
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
o
Temperature ( C)
Vcc Supply Voltage (V)
Figure 15A CS Shutdown Propagation Delay
vs. Temperature
Figure 15B CS Shutdown Propagation Delay
vs. Voltage
800
700
800
700
600
Max.
Typ
600
500
400
300
200
100
0
500
Max.
400
Typ
300
200
100
0
-50 -25
0
25
50
o
75
100 125
10
12
14
16
18
20
Temperature ( C)
VCC Supply Voltage (V)
Figure 16A CS to FAULT Pull-Up Propagation Delay
vs. Temperature
Figure 16B CS to FAULT Pull-Up Propagation Delay
vs. Voltage
8
7
6
5
4
8
7
6
5
4
M
in .
M
in .
3
2
1
0
3
2
1
0
-50
-25
0
25
50
o
75
100
125
10
12
14
16
18
20
Temperature ( C)
VCC Supply Voltage (V)
Figure 17A Logic “1” Input Voltage (IR2127)
Logic “0” Input Voltage (IR2128)
vs Temperature
Figure 17B Logic “1” Input Voltage (IR2127)
Logic “0” Input Voltage (IR2128)
vs Voltage
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11
IR2127C/IR2128C/IR21271C
4
4
3.2
2.4
1.6
0.8
0
3.2
2.4
1.6
M
ax
0.8
0
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
o
Temperature ( C)
VCC Supply Voltage (V)
Figure 18A Logic “0” Input Voltage (IR2127)
Logic “1” Input Voltage (IR2128)
vs Temperature
Figure 18B Logic “0” Input Voltage (IR2127)
Logic “1” Input Voltage (IR2128)
vs Voltage
500
400
300
200
100
0
500
400
Max.
M
ax.
300
200
T yp .
Typ.
Min.
100
0
M
in .
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
o
Temperature ( C)
Vcc Supply Voltage (V)
Figure 19A CS Input Positive Going Voltage
vs Temperature (IR2127/IR2128)
Figure 19B CS Input Positive Going Voltage
vs Voltage (IR2127/IR2128)
1
0.8
0.6
0.4
1
0.8
0.6
0.4
M ax.
0.2
Max.
0.2
0
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
o
Temperature ( C)
Vcc Supply Voltage (V)
Figure 20A High Level Output vs Temperature
Figure 20B High Level Output vs Voltage
12
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IR2127C/IR2128C/IR21271C
1
0.8
0.6
0.4
0.2
0
1
0.8
0.6
0.4
Max.
Max.
0.2
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
o
Temperature ( C)
Vcc Supply Voltage (V)
Figure 21A Low Level Output vs Temperature
Figure 21B Low Level Output vs Voltage
500
400
300
200
500
400
300
200
100
0
100
M ax.
M ax.
0
-50
-25
0
25
50
75
100
125
0
100
200
300
400
500
600
o
VB Boost Voltage (V)
Temperature ( C)
Figure 22B Offset Supply Current
vs Voltage
Figure 22A Offset Supply Current
vs Temperature
800
700
800
700
600
500
400
300
200
100
0
600
500
400
300
200
Max.
Typ.
M
ax.
T yp .
100
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
o
Vcc Supply Voltage (V)
Temperature ( C)
Figure 23B VBS Supply Current
vs Voltage
Figure 23A VBS Supply Current
vs Temperature
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13
IR2127C/IR2128C/IR21271C
300
250
300
250
200
150
100
200
150
100
M ax
M
ax
T yp
50
0
T yp
50
0
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
o
Vcc Supply Voltage (V)
Temperature ( C)
Figure 24B Vcc Supply Current
vs Voltage
Figure 24A Vcc Supply Current
vs Temperature
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
M
ax.
Max.
Typ
T yp
0
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
o
Temperature ( C)
Vcc Supply Voltage (V)
Figure 25A Logic “1” Input Current
vs Temperature
Figure 25B Logic “1” Input Current
vs Voltage
5
4
3
2
1
0
5
4
3
2
1
0
Max.
Max.
-50
-25
0
25
50
o
75
100
125
10
12
14
16
18
20
Temperature ( C)
Vcc Supply Voltage (V)
Figure 26A Logic “0” Input Current
vs Temperature
Figure 26B Logic “0” Input Current
vs Voltage
14
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IR2127C/IR2128C/IR21271C
5
4
3
5
4
3
2
1
0
2
Max.
1
Max.
0
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
o
Vcc Supply Voltage (V)
Temperature ( C)
Figure 27B “High” CS Bias Current
vs Voltage
Figure 27A “High” CS Bias Current
vs Temperature
5
4
3
2
1
0
5
4
3
2
1
0
Max.
Max.
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
o
VCC Supply Voltage (V)
Temperature ( C)
Figure 28B “Low” CS Bias Current vs Voltage
Figure 28A “Low” CS Bias Current
vs Temperature
15
14
13
15
14
13
12
11
10
9
Max.
M
ax.
T yp
in .
12
11
10
9
Typ.
Min.
M
8
8
7
7
6
6
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
o
VCC Supply Voltage (V)
Temperature ( C)
Figure 29B VBS Undervoltage Threshold (+)
vs Voltage (IR2127/IR2128)
Figure 29A VBS Undervoltage Threshold (+)
vs Temperature (IR2127/IR2128)
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15
IR2127C/IR2128C/IR21271C
15
14
13
12
15
14
13
12
11
10
9
Max.
M
ax.
11
10
9
T yp.
in.
Typ.
Min.
M
8
8
7
7
6
6
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
o
Vcc Supply Voltage (V)
Temperature ( C)
Figure 30B VBS Undervoltage Threshold (-)
vs Voltage (IR2127/IR2128)
Figure 30A VBS Undervoltage Threshold (-)
vs Temperature (IR2127/IR2128)
500
400
500
400
300
T yp .
300
200
100
0
200
M
in .
T yp .
100
M
in .
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
o
Temperature ( C)
VBIAS Supply Voltage (V)
Figure 31A Output Source Current vs Temperature
Figure 31B Output Source Current vs Voltage
800
800
700
600
500
700
T yp .
600
500
M
in .
400
300
200
100
0
400
300
200
100
0
Typ.
Min.
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
o
Temperature ( C)
VBIAS Supply Voltage (V)
Figure 32A Output Sink Current vs Temperature
Figure 32B Output Sink Current vs Voltage
16
www.irf.com
IR2127C/IR2128C/IR21271C
Additional Testing and Screening
For Customers requiring product supplied as Known Good Die (KGD) or requiring specific die level
testing, please contact your local IR Sales.
Shipping
Three shipping options are offered as standard.
•
•
•
Un-sawn wafer
Die in waffle pack
Die on film
Tape and Reel is also available for some products.
Please specify your required shipping option when requesting priCes and ordering Die product. If not
specified, Un-sawn wafer will be assumed.
Handling
•
Product must be handled only at ESD safe workstations. Standard ESD precautions and safe
work environments are as defined in MIL-HDBK-263.
•
•
Product must be handled only in a class 10,000 or better-designated clean room environment.
Singulated die are not to be handled with tweezers. A vacuum wand with a non-metallic ESD
protected tip should be used.
Wafer/Die Storage
•
•
•
Proper storage conditions are necessary to prevent product contamination and/or degradation
after shipment.
Un-sawn wafers and singulated die can be stored for up to 12 months when in the original
sealed packaging at room temperature (45% +/- 15% RH controlled environment).
Un-sawn wafers and singulated die that have been opened can be stored when returned to
their containers and placed in a Nitrogen purged cabinet, at room temperature (45% +/- 15%
RH controlled environment).
•
Note: To reduce the risk of contamination or degradation, it is recommended that product not
being used in the assembly process be returned to their original containers and resealed with a
vacuum seal process.
•
•
Sawn wafers on a film frame are intended for immediate use and have a limited shelf life.
Die in Surf Tape type carrier tape are intended for immediate use and have a limited shelf life.
This is primarily due to the nature of the adhesive tape used to hold the product in the carrier
tape cavity. This product can be stored for up to 30 days. This applies whether or not the material
has remained in its original sealed container.
For further information: Please contact your local IR Sales office or email your enquiry to http://die.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
Visit us at www.irf.com for sales contact information.
10/31/2005
www.irf.com
17
相关型号：
IR2130JTRPBF
Half Bridge Based MOSFET Driver, 0.5A, BICMOS, PQCC32, PLASTIC, MS-018AC, LCC-44/32
INFINEON
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