IR2153S [INFINEON]

SELF-OSCILLATING HALF-BRIDGE DRIVER; 自振荡半桥驱动器


型号：	IR2153S
厂家：	Infineon
描述：	SELF-OSCILLATING HALF-BRIDGE DRIVER 自振荡半桥驱动器驱动器 MOSFET驱动器驱动程序和接口接口集成电路光电二极管
文件：	总9页 (文件大小：218K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Data Sheet No. PD60062 revM

IR2153(D)(S)&(PbF)

SELF-OSCILLATING HALF-BRIDGE DRIVER

Features

Product Summary

Integrated 600V half-bridge gate driver

15.6V zener clamp on Vcc

•

600V max.

50%

OFFSET

True micropower start up

Duty Cycle

Tighter initial deadtime control

Low temperature coefficient deadtime

T /T

r p

80/40ns

15.6V

Shutdown feature (1/6th Vcc) on C pin

Increased undervoltage lockout Hysteresis (1V)

Lower power level-shifting circuit

clamp

Constant LO, HO pulse widths at startup

Lower di/dt gate driver for better noise immunity

Low side output in phase with RT

Deadtime (typ.)

1.2 µs

Packages

Internal 50nsec (typ.) bootstrap diode (IR2153D)

Excellent latch immunity on all inputs and outputs

ESD protection on all leads

Also available LEAD-FREE

Description

The IR2153D(S) are an improved version of the

popular IR2155 and IR2151 gate driver ICs, and incor-

8 Lead SOIC

8 Lead PDIP

porates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS

555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature

has been designed into the C pin, so that both gate driver outputs can be disabled using a low voltage control

signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout

threshold on V

has been reached, resulting in a more stable profile of frequency vs time at startup.

Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by

increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing

the latch immunity of the device, and providing comprehensive ESD protection on all pins.

Typical Connections

IR2153D

IR2153(S)

600V

MAX

600V

MAX

VCC

Shutdown

COM

Shutdown

COM

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IR2153(D)(S)& (PbF)

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-

eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and

power dissipation ratings are measured under board mounted and still air conditions.

Symbol Definition

Min.

Max.

Units

High side floating supply voltage

-0.3

625

V + 0.3

High side floating supply offset voltage

High side floating output voltage

Low side output voltage

- 25

- 0.3

V + 0.3

-0.3

+ 0.3

R pin voltage

-0.3

—

C pin voltage

Supply current (note 1)

V/ns

pin current

-5

dV /dt

Allowable offset voltage slew rate

-50

—

Maximum power dissipation @ T ≤ +25°C

(8 Lead DIP)

(8 Lead SOIC)

(8 Lead DIP)

(8 Lead SOIC)

1.0

—

0.625

125

200

150

300

Rth

Thermal resistance, junction to ambient

—

°C/W

—

Junction temperature

-55

—

Storage temperature

°C

Lead temperature (soldering, 10 seconds)

Recommended Operating Conditions

For proper operation the device should be used within the recommended conditions.

Symbol Definition

Min.

Max.

Units

High side floating supply voltage

Steady state high side floating supply offset voltage

Supply voltage

- 0.7

CLAMP

-3.0 (note 2)

600

CLAMP

Supply current

(note 3)

-40

Junction temperature

125

°C

Note 1:

This IC contains a zener clamp structure between the chip V

and COM which has a nominal breakdown

voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source

greater than the V specified in the Electrical Characteristics section.

CLAMP

Note 2:

Note 3:

Care should be taken to avoid output switching conditions where the V node flies inductively below ground by

more than 5V.

Enough current should be supplied to the V

pin of the IC to keep the internal 15.6V zener diode clamping the

voltage at this pin.

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IR2153(D)(S)& (PbF)

Recommended Component Values

Symbol Component

Min.

Max.

—

Units

kΩ

Timing resistor value

C pin capacitor value

330

—

IR2153 RT vs Frequency

1000000

100000

10000

1000

330pf

470pF

1nF

CT Values

2.2nF

4.7nF

10nF

100

1000

10000

100000

1000000

RT (ohms)

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IR2153(D)(S)& (PbF)

Electrical Characteristics

(V , V ) = 12V, C = 1000 pF, C = 1 nF and T = 25°C unless otherwise specified. The V , V and I

O O

BIAS CC BS

IN TH

parameters are referenced to COM. The V and I parameters are referenced to COM and are applicable to the

respective output leads: HO or LO.

Low Voltage Supply Characteristics

Symbol Definition

Min. Typ.

Max. Units Test Conditions

Rising V

undervoltage lockout threshold

8.1

7.2

0.5

—

9.0

8.0

9.9

CCUV+

CCUV-

Falling V undervoltage lockout threshold

8.8

undervoltage lockout Hysteresis

1.0

1.5

CCUVH

Micropower startup V

supply current

150

950

≤ V

CCUV-

QCCUV

µA

Quiescent V supply current

—

500

15.6

QCC

zener clamp voltage

14.4

16.8

= 5mA

CLAMP

Floating Supply Characteristics

Symbol Definition

Min.

Typ.

Max. Units Test Conditions

Micropower startup V supply current

—

≤ V

CCUV-

QBSUV

µA

Quiescent VBS supply current

4.0

QBS

Minimum required V voltage for proper

5.0

CC CCUV+

+ 0.1V

BSMIN

functionality from R to HO

Offset supply leakage current

—

µA

V = V = 600V

B S

Bootstrap diode forward voltage (IR2153D)

0.5

1.0

IF = 250mA

Oscillator I/O Characteristics

Symbol Definition

Min.

Typ. Max. Units Test Conditions

Oscillator frequency

19.4

20.6

R = 36.9kΩ

osc

kHz

—

100

106

RT = 7.43kΩ

fo < 100kHz

R pin duty cycle

pin current

0.001

0.70

8.0

1.0

1.2

—

UV-mode C pin pulldown current

0.30

—

= 7V

CTUV

Upper C ramp voltage threshold

CT+

—

4.0

—

Lower C ramp voltage threshold

CT-

voltage shutdown threshold

1.8

—

2.1

2.4

CTSD

RT+

= 100µA

= 1mA

= 100µA

= 1mA

≤ V

High-level R output voltage, V - V

T CC

100

300

Low-level R output voltage

RT-

100

300

—

100

UV-mode R output voltage

RTUV

RTSD

CCUV-

= 100µA,

= 0V

SD-Mode R output voltage, V

- V

—

300

= 1mA,

= 0V

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IR2153(D)(S)& (PbF)

Electrical Characteristics (cont.)

Gate Driver Output Characteristics

Symbol Definition

Min.

Typ. Max. Units Test Conditions

High level output voltage, V

-V

—

100

= OA

≤ V

BIAS

VOL

Low-level output voltage, VO

VOL_UV UV-mode output voltage, VO

CCUV-

Output rise time

—

150

100

—

Output fall time

nsec

Shutdown propogation delay

Output deadtime (HO or LO)

—

660

1.20

0.75

1.65

µsec

Lead Definitions

Symbol Description

Logic and internal gate drive supply voltage

Oscillator timing resistor input

Oscillator timing capacitor input

IC power and signal ground

COM

Low side gate driver output

High voltage floating supply return

High side gate driver output

High side gate driver floating supply

Lead Assignments

8 Lead PDIP

8 Lead SOIC

IR2153D

IR2153(S)

NOTE: The IR2153D is offered in 8 lead PDIP only.

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IR2153(D)(S)& (PbF)

Functional Block Diagram for IR2153(S)

R_T

V_B

LEVEL

SHIFT

PULSE

FILTER

PULSE

GEN

DEAD

TIME

V_S

V_CC

R/2

15.6V

C_T

DELAY

LOGIC

DEAD

TIME

COM

DETECT

Functional Block Diagram for IR2153D

R_T

V_B

LEVEL

PULSE

FILTER

SHIFT

PULSE

GEN

DEAD

TIME

V_S

V_CC

R/2

15.6V

C_T

DELAY

LOGIC

DEAD

TIME

COM

DETECT

NOTE: The D1 is a separate die.

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IR2153(D)(S)& (PbF)

8 Lead PDIP

01-3003 01

8 Lead SOIC

01-0021 08

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IR2153(D)(S)& (PbF)

V _CLAMP

Vccuv+

Vcc

R_T

C_T

2/3

R_T,C_T

1/3

Figure 1. Input/Output Timing Diagram

(HO)

(LO)

Figure 2. Switching Time Waveform Definitions

ꢀ_ꢁ

ꢄꢅꢆ

ꢇꢅꢆ

ꢈꢅꢆ

ꢂꢃ

ꢊꢁ

ꢇꢅꢆ

ꢉꢃ

ꢈꢅꢆ

Figure 3. Deadtime Waveform Definitions

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IR2153(D)(S)& (PbF)

LEADFREE PART MARKING INFORMATION

Part number

Date code

IRxxxxxx

YWW?

IR logo

?XXXX

Pin 1

Identifier

Lot Code

(Prod mode - 4 digit SPN code)

MARKING CODE

Lead Free Released

Non-Lead Free

Released

Assembly site code

Per SCOP 200-002

ORDER INFORMATION

Basic Part (Non-Lead Free)

Leadfree Part

8-Lead PDIP IR2153 order IR2153

8-Lead SOIC IR2153S order IR2153S

8-Lead PDIP IR2153D order IR2153D

8-Lead PDIP IR2153 order IR2153PbF

8-Lead SOIC IR2153S order IR2153SPbF

8-Lead PDIP IR2153D order IR2153DPbF

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105

This product has been qualified per industrial level

Data and specifications subject to change without notice.

8/16/2005

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