IR250BG12DCBPBF [INFINEON]

Silicon Controlled Rectifier, 39.25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER;
IR250BG12DCBPBF
型号: IR250BG12DCBPBF
厂家: Infineon    Infineon
描述:

Silicon Controlled Rectifier, 39.25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER

文件: 总3页 (文件大小:152K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Bulletin I0200J rev. B 01/01  
IR250BG..DCB  
PHASE CONTROL THYRISTORS  
Junction Size  
:
:
:
:
:
Square 250 mils  
4"  
Wafer Size  
VRRM/ VDRM Class  
PassivationProcess  
Reference IR Packaged Part  
600 to 1200 V  
Glassivated MESA  
40TPS Series  
Major Ratings and Characteristics  
Parameters  
Units  
Test Conditions  
VTM  
MaximumOn-stateVoltage  
1.3V  
TJ =25°C, IT =25A  
VRRM/VDRM ReverseBreakdownVoltage  
600to1200V TJ = 25°C, IRRM = 100 µA  
(1)  
IGT  
VGT  
IH  
Max.RequiredDCGateCurrenttoTrigger  
150mA  
2 V  
TJ=25°C,anodesupply=6V,resistiveload  
TJ=25°C,anodesupply=6V,resistiveload  
Max.RequiredDCGateVoltagetoTrigger  
HoldingCurrentRange  
5 to 200 mA Anodesupply=6V,resistiveload  
IL  
MaximumLatchingCurrent  
400mA  
Anodesupply=6V,resistiveload  
(1) Nitrogen flow on die edge.  
Mechanical Characteristics  
NominalBackMetalComposition,Thickness  
Cr-Ni-Ag(1KA-4KA -6KA)  
100%Al,(20µm)  
NominalFrontMetalComposition,Thickness  
ChipDimensions  
250x250mils(seedrawing)  
100 mm, with std. <110> flat  
370 µm ± 10 µm  
Wafer Diameter  
Wafer Thickness  
Maximum Width of Sawing Line  
Reject Ink Dot Size  
130µm  
0.25mmdiameterminimum  
Seedrawing  
InkDotLocation  
RecommendedStorageEnvironment  
Storageinoriginalcontainer, indessicated  
nitrogen,withnocontamination  
www.irf.com  
1
IR250BG..DCB  
Bulletin I0200J rev. B 01/01  
Ordering Information Table  
Device Code  
IR 250  
B
G
12  
D
CB  
3
4
5
6
1
2
7
1
2
-
-
International Rectifier Device  
Chip Dimension in Mils  
3
4
5
6
7
-
-
-
-
-
Type of Device: B = Wire Bondable SCR  
Passivation Process: G = Glassivated MESA  
Voltage code: Code x 100 = VRRM  
Metallization: D = Silver (Anode) - Aluminium (Cathode)  
CB = Probed Uncut Die (wafer in box)  
None = Probed Die in chip carrier  
Outline Table  
All dimensions are in millimeters  
2
www.irf.com  
IR250BG..DCB  
Bulletin I0200J rev. B 01/01  
Wafer Layout  
TOP VIEW  
N° 148 Basic Cells  
ø 100 ± 0.5  
32.5 ± 2.5  
All dimensions are in millimiters  
www.irf.com  
3

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