IR255SG06H [INFINEON]
Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER;
| 型号： | IR255SG06H |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER 栅 栅极 |
| 文件： | 总3页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet I0211J 12/99
IR255SG..HCB
PHASE CONTROL THYRISTORS
Junction Size:
Wafer Size:
Square 250 mils
4"
VRRMClass:
600 to 1200 V
Glassivated MESA
Passivation Process:
Reference IR Packaged Part: n. a.
Major Ratings and Characteristics
Parameters
Units
Test Conditions
VTM
Maximum On-state Voltage
1.25V
TJ=25°C, IT = 2 5 A
VDRM/VRRM DirectandReverse Breakdown Voltage
600 to 1200 V TJ = 25°C, IDRM/IRRM = 100 µA
(1)
IGT
VGT
IH
Max.RequiredDCGateCurrent toTrigger
Max. RequiredDCGateVoltagetoTrigger
Holding Current Range
80mA
2 V
TJ=25°C,anodesupply=6V,resistiveload
TJ=25°C,anodesupply=6V,resistiveload
5 to 100 mA Anodesupply=6V, resistiveload
IL
Maximum Latching Current
300mA
Anodesupply=6V, resistiveload
(1)Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition,Thickness
Cr -Ni -Ag (1 KA-4 KA -6 KA)
Cr-Ni-Ag(1KA-4KA -6KA)
250x250mils(seedrawing)
100mm,withstd.<110>flat
330µm±10µm
Nominal Front Metal Composition,Thickness
Chip Dimensions
WaferDiameter
Wafer Thickness
Maximum Width of SawingLine
Reject Ink Dot Size
130µm
0.25mmdiameterminimum
Seedrawing
Ink Dot Location
Recommended Storage Environment
Storage in original container, in dessicated
nitrogen, with no contamination
www.irf.com
1
IR255SG..HCB
Preliminary Data Sheet I0211J 12/99
Ordering Information Table
Device Code
IR 255
S
G
12
H
CB
1
2
3
4
5
6
7
1
2
3
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: S = Solderable SCR
Available Class
06 = 600 V
08 = 800 V
12 =1200 V
4
5
-
-
Passivation Process: G = Glassivated MESA
Voltage code: Code x 100 = VRRM
6
7
-
-
Metallization: H = Silver (Anode) - Silver (Cathode)
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in millimiters
2
www.irf.com
IR255SG..HCB
Preliminary Data Sheet I0211J 12/99
Wafer Layout
TOP VIEW
N° 148 Basic Cells
All dimensions are in millimiters
www.irf.com
3
相关型号：
IR255SG06HCB
Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER
INFINEON
IR255SG06HCB
Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER
VISHAY
IR255SG06HPBF
Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER
INFINEON
IR255SG08H
Silicon Controlled Rectifier, 800V V(DRM), 800V V(RRM), 1 Element, 4 INCH, WAFER
INFINEON
IR255SG08HCB
Silicon Controlled Rectifier, 800V V(DRM), 800V V(RRM), 1 Element, 4 INCH, WAFER
INFINEON
IR255SG08HCB
Silicon Controlled Rectifier, 800V V(DRM), 800V V(RRM), 1 Element, 4 INCH, WAFER
VISHAY
IR255SG08HCBPBF
Silicon Controlled Rectifier, 800V V(DRM), 800V V(RRM), 1 Element, 4 INCH, WAFER
INFINEON
IR255SG08HPBF
Silicon Controlled Rectifier, 800V V(DRM), 800V V(RRM), 1 Element, 4 INCH, WAFER
INFINEON
IR255SG12H
Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER
INFINEON
IR255SG12H
Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER
VISHAY
IR255SG12HCB
Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER
INFINEON
©2020 ICPDF网 联系我们和版权申明