IR370SG12HCBPBF [INFINEON]

Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER;
IR370SG12HCBPBF
型号: IR370SG12HCBPBF
厂家: Infineon    Infineon
描述:

Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER

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文件: 总3页 (文件大小:124K)
中文:  中文翻译
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Preliminary Data Sheet I0212J 12/99  
IR370SG..HCB  
PHASE CONTROL THYRISTORS  
Junction Size:  
Wafer Size:  
Square 370 mils  
4 "  
VRRMClass:  
600 to 1200 V  
Glassivated MESA  
Passivation Process:  
Reference IR Packaged Part: 50RIA Series  
Major Ratings and Characteristics  
Parameters  
Units  
Test Conditions  
VTM  
MaximumOn-stateVoltage  
1.2 V  
TJ=25°C, IT = 2 5 A  
VDRM/VRRM DirectandReverseBreakdownVoltage  
600 to 1200 V TJ = 25°C, IDRM /I RRM = 100 µA  
(1)  
IGT  
VGT  
IH  
Max.RequiredDCGateCurrenttoTrigger  
Max. RequiredDCGateVoltagetoTrigger  
HoldingCurrentRange  
150mA  
2 V  
TJ=25°C,anodesupply=6V,resistiveload  
TJ=25°C,anodesupply=6V,resistiveload  
5 to 200 mA Anodesupply=6V, resistiveload  
IL  
MaximumLatchingCurrent  
400mA  
Anodesupply=6V, resistiveload  
(1)Nitrogen flow on die edge.  
Mechanical Characteristics  
NominalBackMetalComposition,Thickness  
Cr-Ni-Ag(1KA-4KA -6KA)  
Cr-Ni-Ag(1KA-4KA -6KA)  
370x370mils(seedrawing)  
100mm,withstd.<110>flat  
370µm±10µm  
NominalFrontMetalComposition,Thickness  
ChipDimensions  
WaferDiameter  
WaferThickness  
MaximumWidthofSawingLine  
RejectInkDotSize  
130µm  
0.25mmdiameterminimum  
Seedrawing  
InkDotLocation  
RecommendedStorageEnvironment  
Storageinoriginalcontainer,indessicated  
nitrogen,withnocontamination  
www.irf.com  
1
IR370SG..HCB  
Preliminary Data Sheet I0212J 12/99  
OrderingInformationTable  
Device Code  
IR 370  
S
G
12H  
CB  
1
2
3
4
5
6
7
1
2
3
-
-
-
International Rectifier Device  
Chip Dimension in Mils  
Type of Device: S = Solderable SCR  
4
5
-
-
Passivation Process: G = Glassivated MESA  
Voltage code: Code x 100 = VRRM  
Available Class  
06 = 600 V  
08 = 800 V  
12 =1200 V  
6
7
-
-
Metallization: H = Silver (Anode) - Silver (Cathode)  
CB = Probed Uncut Die (wafer in box)  
None = Probed Die in chip carrier  
OutlineTable  
All dimensions are in millimeters  
2
www.irf.com  
IR370SG..HCB  
Preliminary Data Sheet I0212J 12/99  
Wafer Layout  
TOP VIEW  
N° 69 Basic Cells  
All dimensions are in millimiters  
www.irf.com  
3

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