IR370SG6HCB [VISHAY]

Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER;


型号：	IR370SG6HCB
厂家：	VISHAY
描述：	Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER 栅栅极
文件：	总4页 (文件大小：54K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Data Sheet I0212J 12/99

IR370SG..HCB

PHASE CONTROL THYRISTORS

Junction Size:

Wafer Size:

Square 370 mils

4 "

V_RRMClass:

600 to 1200 V

Glassivated MESA

Passivation Process:

Reference IR Packaged Part: 50RIA Series

Major Ratings and Characteristics

Parameters

Units

Test Conditions

V_TM

MaximumOn-stateVoltage

1.2 V

T_J=25°C, I_T= 2 5 A

V_DRM/V_RRMDirectandReverseBreakdownVoltage

600 to 1200 V T_J= 25°C, I_DRM/I _RRM= 100 µA

(1)

I_GT

V_GT

I_H

Max.RequiredDCGateCurrenttoTrigger

Max. RequiredDCGateVoltagetoTrigger

HoldingCurrentRange

150mA

2 V

T_J=25°C,anodesupply=6V,resistiveload

5 to 200 mA Anodesupply=6V, resistiveload

I_L

MaximumLatchingCurrent

400mA

Anodesupply=6V, resistiveload

(1)Nitrogen flow on die edge.

Mechanical Characteristics

NominalBackMetalComposition,Thickness

Cr-Ni-Ag(1KA-4KA -6KA)

370x370mils(seedrawing)

100mm,withstd.<110>flat

370µm±10µm

NominalFrontMetalComposition,Thickness

ChipDimensions

WaferDiameter

WaferThickness

MaximumWidthofSawingLine

RejectInkDotSize

130µm

0.25mmdiameterminimum

Seedrawing

InkDotLocation

RecommendedStorageEnvironment

Storageinoriginalcontainer,indessicated

nitrogen,withnocontamination

Document Number: 93847

www.vishay.com

IR370SG..HCB

Preliminary Data Sheet I0212J 12/99

OrderingInformationTable

Device Code

IR 370

12H

13245- PTICVnyoahtpeslitprseanigDvoaeaiftmitDocioeonenndavsilePciR:oreoCen:coSietndis=feiMse:SxrilGsDo1l0ed=0veic=rGaelbValsesSivCaRted MESA

Available Class

06 = 600 V

08 = 800 V

12 =1200 V

RRM

6-7 CMBetall=izaPtioronb:eHd=USncilvuetrD(iAen(owdaefe) r- Sinilvbeorx()Cathode)

None = Probed Die in chip carrier

OutlineTable

All dimensions are in millimeters

Document Number: 93847

www.vishay.com

IR370SG..HCB

Preliminary Data Sheet I0212J 12/99

Wafer Layout

TOP VIEW

N° 69 Basic Cells

All dimensions are in millimiters

Document Number: 93847

www.vishay.com

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of

International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the

products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or

anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier^®, IR^®, the IR logo, HEXFET^®, HEXSense^®, HEXDIP^®, DOL^®, INTERO^®, and POWIRTRAIN^®

are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product

names noted herein may be trademarks of their respective owners.

Document Number: 99901

Revision: 12-Mar-07

www.vishay.com

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