IR51H(D)420 [INFINEON]

HALF BRDG BASED MOSFET DRIVER, PSIP7, SIP-9/7;


型号：	IR51H(D)420
厂家：	Infineon
描述：	HALF BRDG BASED MOSFET DRIVER, PSIP7, SIP-9/7 驱动信息通信管理接口集成电路驱动器
文件：	总7页 (文件大小：61K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Data Sheet No. PD60083

IR51H(D)224

IR51H(D)320

IR51H(D)420

SELF-OSCILLATING HALF BRIDGE

ProductSummary

Features

• Output Power MOSFETs in half-bridge configuration

• High side gate drive designed for bootstrap operation

• Bootstrap diode integrated into package (HD type)

• Accurate timing control for both Power MOSFETs

Matched delay to get 50% duty cycle

Matched deadtime of 1.2us

• Internal oscillator with programmable frequency

(max) 250V (IR51H(D)224)

400V (IR51H(D)310)

500V (IR51H(D)420)

Duty Cycle

Deadtime

50%

1.2µs

ds(on)

1.1W (IR51H(D)224)

3.0W (IR51H(D)310)

3.6W (IR51H(D)420)

f =

1. 4 × (R^T+ 75Ω) × C^T

• 15.6V Zener clamped Vcc for offline operation

• Half-bridge output is out of phase with R_T

P (T = 25o )

2.0W

• Micropower startup

Package

Description

The IR51H(D)XXX are complete high voltage, high speed, self-

oscillating half-bridge circuits. Proprietary HVIC and latch im-

mune CMOS technologies, along with the HEXFET power

MOSFET technology, enable ruggedized single package construc-

tion.The front-end features a programmable oscillator which func-

tions similar to the CMOS 555 timer. The supply to the control

circuit has a zener clamp to simplify offline operation.The output

features two HEXFETs in a half-bridge configuration with an in-

ternally set deadtime designed for minimum cross-conduction in

the half-bridge. Propagation delays for the high and low side

power MOSFETs are matched to simplify

use in 50% duty cycle applications. The

device can operate up to 500 volts.

TypicalConnection

DC Bus

VIN

D 1

IR51H(D)XXX

External

Fast recovery diode D1 is

not required for HD type

Vcc

R _T

V_B

V_IN

R _T

C _T

V O

TO,

C O M

LOAD

COM

IR51H(D)224

IR51H(D)320

IR51H(D)420

AbsoluteMaximumRatings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All

voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any

lead. The thermal resistance and power dissipation ratings are measured under board mounted and

still air conditions.

Symbol

Definition

Minimum Maximum

Units

V_IN

High voltage supply

-224

-320

-420

- 0.3

250

400

- 0.3

500

Vo - 0.3

Vo +2.5

V_B

High side floating supply

Half-bridge output

R_Tvoltage

V_O

-0.3

- 0.3

—

V_IN+ 0.3

V_cc+ 0.3

V_RT

V_CT

I_cc

C_Tvoltage

Supply current (note 1)

R_Toutput current

Peak diode recovery

I_RT

- 5

dV/dt

P_D

—

3.5

V/ns

^oC/W

Package power dissipation @ T ≤ +25°C

—

2.00

Rth_JA

T_J

Thermal resistance, junction to ambient

Junction temperature

—

-55

—

150

^oC

T_S

Storage temperature

150

T_L

Lead temperature (soldering, 10 seconds)

300

NOTE 1:

This IC contains a zener clamp structure between V

and COM which has a nominal breakdown voltage of 15.6V.

Please note that this supply pin should not be driven by a DC, low impedance power source greater than the V

specified in the Electrical Characteristics Section

CLAMP

IR51H(D)224

IR51H(D)320

IR51H(D)420

RecommendedOperatingConditions

The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used

within the recommended conditions.

Symbol

Definition

Minimum

Maximum

Units

V_B

V_IN

High side floating supply absolute voltage

High voltage supply

+ 10

—

V + V

clamp

250

-224

-320

-420

—

400

500

V_IN

V_O

I_D

Half-bridge output voltage

-3.0 (note 2)

Continuous drain current (T = 25°C)

—

-224

-320

1.1

0.9

-420

-224

-320

-420

—

0.7

0.6

0.5

(T = 85°C)

—

(note 3)

-40

I_CC

T_A

Supply current

°C

Ambient temperature

125

NOTE 2:

Care should be taken to avoid switching conditions where the V node flies inductively below ground by more than 5V.

NOTE 3:

Enough current should be supplied to the V

lead of the IC to keep the internal 15.6V zener diode clamping the

voltage at this lead.

DynamicElectricalCharacteristics

V_BIAS(V_CC, V_BS) = 12V, T = 25^oC unless otherwise specified.

Symbol Definition

Min. Typ.

Max. UnitsTest Conditions

Reverse recovery time (MOSFET body diode)

—

I =1.1A

-224

-320

-420

200

270

240

—

F=900mA

di/dt

=100

A/µs

F=700mA

Reverse recovery charge (MOSFET body diode)

R_Tduty cycle

I =1.1A

-224

-320

-420

0.7

0.6

0.5

µC

—

I =900mA

I =700mA

fosc = 20 kHz

—

IR51H(D)224

IR51H(D)320

IR51H(D)420

Static Electrical Characteristics

V_BIAS(V_CC, V_B) = 12V, T = 25^oC unless otherwise specified.

Symbol Definition

Min. Typ. Max. UnitsTest Conditions

V_CCUV+V_CCsupply undervoltage positive going

threshold

—

8.4

—

V_CCsupply undervoltage negative going

threshold

8.0

—

CCUV-

Quiescent V_CCsupply current

300

—

µA V_CC> V_CCUV

QCC

V_CCzener shunt clamp voltage

Quiescent V_BSsupply current

—

15.6

I_CC= 5mA

CLAMP

QBS

µA

Offset supply leakage current

Oscillator frequency

—

V_B= V_IN= 500V

R_T= 35.7 kΩ

C_T= 1 nF

OSC

kHz

—

100

—

R_T= 7.04 kΩ

C_T= 1 nF

C_Tinput current

—

0.001

100

1.0

—

µA

C_Tundervoltage lockout

R_Thigh level output voltage, V_CC- R_T

Note 2

CTUV

V_RT+

—

200

—

I_RT= 100µA

I_RT= -1mA

V_RT-

R_Tlow level output voltage

—

200

—

I_RT= 100µA

I_RT= -1mA

V_RTUV

V_CT+

R_Tundervoltage lockout, V_CC- R_T

2/3 V_CCthreshold

—

100

8.0

—

I_RT= 100µA

kHz

Ω

V_CT-

1/3 V_CCthreshold

—

4.0

—

Rds(on) Static-drain-to-source on-resistance

—

I =1.1A

-224

-320

-420

1.1

1.8

3.0

—

F=900mA

—

di/dt

F=700mA

=100

I =1.1A

Diode forward voltage

-224

-320

-420

0.85

0.7

I =900mA

A/µs

—

I =700mA

0.8

IR51H(D)224

IR51H(D)320

IR51H(D)420

FunctionalBlockDiagram

VIN

Vcc

IRFCXXX

IR2151

V O

IRFCXXX

C O M

Fast recovery diode D1 is

incorporated in IR51HDXXX only

LeadDefinitions

Symbol

LeadDescription

V_CC

Logic and internal gate drive supply voltage. An internal zener clamp diode at 15.6 V norminal is included

to allow the V_CCto be current fed directly from VIN typically by means of a high value resistor.

R_T

C_T

Oscillator timing resistor output; a resistor is connected from R_Tto C_T. RT is out of phase with the half-

bridge output (VO).

Oscillator timing capacitor input; a capacitor is connected from C_Tto COM in order to program the

oscillator frequency according to the following equation:

f =

1. 4 × (R^T+ 75Ω) × C^T

C_TPIN also invokes shutdown function (see note 2) where 75Ω is the effective impedence of the R_T

output stage.

V_B

High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is needed

to feed from V_CCto V_B. (HD type circuits incorporate this diode).

High voltage supply

V_IN

Half Bridge output

COM

Logic and low side of half bridge return

IR51H(D)224

IR51H(D)320

IR51H(D)420

Lead Assignments

COM

9 Lead SIP without Leads 5 and 8

Vccuv+

V _CLAMP

Vcc

R_T

C_T

V+

Figure 1. Input/Output Timing Diagram

IR51H(D)224

IR51H(D)320

IR51H(D)420

Case Outline - 9 Lead SIP

NOTES:

1. Dimensioning and tolerancing per ANSI Y14.5M-1982

2. Controlling Dimension: INCH

3. Dimensions are shown in millimeters (inches)

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http://www.irf.com/

Data and specifications subject to change without notice. 3/22/99

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