IR51H310 [INFINEON]

SELF-OSCILLATING HALF-BRIDGE; 自振荡半桥


型号：	IR51H310
厂家：	Infineon
描述：	SELF-OSCILLATING HALF-BRIDGE 自振荡半桥
文件：	总6页 (文件大小：154K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Data Sheet No. PD-6.060D

IR51H310

SELF-OSCILLATING HALF-BRIDGE

Features

Product Summary

Output Power MOSFETs in half-bridge configuration

400V Rated Breakdown Voltage

High side gate drive designed for bootstrap operation

Accurate timing control for both Power MOSFETs

Matched delay to get 50% duty cycle

V (max)

400V

50%

Duty Cycle

Deadtime

Matched deadtime of 1.2us

Internal oscillator with programmable frequency

1.2µs

3.6Ω

2.0W

DS(on)

f =

1.4 × (R + 75Ω) × C

P (T = 25

)

ºC

Zener clamped Vcc for offline operation

Half-bridge output is out of phase with R_T

Description

Package

The IR51H310 is a high voltage, high speed, self-

oscillating half-bridge. Proprietary HVIC and latch

immune CMOS technologies, along with the

HEXFET

power MOSFET technology, enable

ruggedized single package construction. The front-end

features a programmable oscillator which functions

similar to the CMOS 555 timer. The supply to the

control circuit has a zener clamp to simplify offline

operation. The output features two HEXFETs in a

half-bridge configuration with an internally set

deadtime designed for minimum cross-conduction in

the half-bridge. Propagation delays for the high and

low side power MOSFETs are matched to simplify use

in 50% duty cycle applications. The device can

operate up to 400 volts.

IR51H310

9506

Typical Connection

U P T O 4 0 0 V D C B U S

IR 5 1 H 3 1 0

C C

R T

V O

C T

T O L O A D

C O M

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IR51H310

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All

voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.

The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air

conditions.

Parameter

Symbol

V_IN

V_B

Definition

Min.

-0.3

---

Max.

400

425

Units

High Voltage Supply

High Side Floating Supply Absolute Voltage

Half-Bridge Output Voltage

R_TVoltage

V_RT

V_CT

I_CC

V + 0.3

V_CC+ 0.3

C_TVoltage

Supply Current (Note 1)

I_RT

R_TOutput Current

-5

dv/dt

P_D

Peak Diode Recovery dv/dt

Package Power Dissipation @ T_A≤ +25ºC

Thermal Resistance, Junction to Ambient

Junction Temperature

---

4.0

V/ns

---

2.00

R_θJA

T_J

---

ºC/W

-55

---

150

T_S

Storage Temperature

150

ºC

T_L

Lead Temperature (Soldering, 10 seconds)

300

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used

within the recommended conditions.

Parameter

Symbol

V_B

V_IN

Definition

High Side Floating Supply Absolute Voltage

High Voltage Supply

Min.

VO + 10

---

Max.

VO + V_CLAMP

400

Units

Half-Bridge Output Voltage

-5

400

I_D

Continuous Drain Current

---

0.70

(T_A= 25ºC)

(T_A= 85ºC)

---

0.45

I_CC

T_A

Supply Current (Note 1)

Ambient Temperature

---

ºC

-40

125

Note 1: Because of the IR51H310's application specificity toward off-line supply systems, this IC contains a

zener clamp structure between the chip V_CCand COM which has a nominal breakdown voltage of

15.6V. Therefore, the IC supply voltage is normally derived by current feeding the V_CClead

(typically by means of a high value resistor connected between the chip V_CCand the rectified line

voltage and a local decoupling capacitor from V_CCto COM) and allowing the internal zener clamp

circuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC,

low impedance power source of greater than V_CLAMP

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IR51H310

Dynamic Electrical Characteristics

V_BIAS(V_CC, V_B) = 12V unless otherwise specified.

Parameter

T_A= 25ºC

Min. Typ. Max. Units Test Conditions

Symbol

Definition

t_rr

Q_rr

Reverse Recovery Time (MOSFET Body Diode)

Reverse Recovery Charge (MOSFET Body Diode)

---

240

0.85

1.2

---

µC

µs

I_F= 700mA

di/dt = 100A/µs

Deadtime, LS Turn-Off to HS Turn-On &

HS Turn-Off to LS Turn-On

R_TDuty Cycle

---

f_OSC= 20 kHz

Static Electrical Characteristics

V_BIAS(V_CC, V_B) = 12V unless otherwise specified.

Parameter

T_A= 25ºC

Min. Typ. Max. Units

Symbol

Definition

Test Conditions

Supply Characteristics

V_CCUV

I_QCC

V_CCSupply Undervoltage Positive Going

Threshold

V_CCSupply Undervoltage Negative Going

Threshold

---

8.4

8.0

---

Quiescent V_CCSupply Current

---

300

---

µA

V_CLAMPV_CCZener Shunt Clamp Voltage

15.6

I_CC= 5 mA

Floating Supply Characteristics

I_QBS

I_OS

Quiescent V_BSSupply Current

Offset Supply Leakage Current---

---

µA

---

_B= V_IN= 400V

Oscillator I/O Characteristics

f_OSC

Oscillator Frequency

---

R_T= 35.7 kΩ,

C_T= 1 nF

R_T= 7.04 kΩ,

C_T= 1 nF

kHz

µA

100

I_CT

C_TInput Current

--- 0.001 1.0

---

V_CTUV

C_TUndervoltage Lockout

---

100

2.5V < V

---

_CC< V_CCUV

I_RT= -100 µA

I_RT= -1 mA

V_RT

R_THigh Level Output Voltage, V_CC- R_T

200

---

R_TLow Level Output Voltage

I_RT= 100 µA

200

100

8.0

4.0

I_RT= 1 mA

V_RTUV

R_TUndervoltage Lockout, V_CC- R_T

2/3 V_CCThreshold

2.5V < V_CC< V_CCUV

V_CT

1/3 V_CCThreshold

Output Characteristics

R_DS(on)Static Drain-to-Source On-Resistance

---

3.6

---

I_D= 700 mA

Tj = 150 ºC

Ω

V_SD

Diode Forward Voltage

---

0.8

---

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IR51H310

Functional Block Diagram

V_B

VIN

IRFC310

V_CC

R_T

IR2151

C_T

IRFC310

COM

Lead Definitions

Lead

Symbol

Description

V_CC

Logic and internal gate drive supply voltage. An internal zener clamp diode at 15.6 V nominal is

included to allow the V_CCto be current fed directly from V_INtypically by means of a high value

resistor.

R_T

C_T

Oscillator timing resistor input; a resistor is connected from R_Tto C_T. R_Tis out of phase with

the half-bridge output (VO).

Oscillator timing capacitor output; a capacitor is connected from C_Tto COM in order to program

the oscillator frequency according to the following equation:

f =

1 4

R^T

C^T

Ω) ×

× (

where 75Ω is the effective impedance of the R_Toutput stage.

High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is

needed to feed from V_CCto V_B.

V_B

V_IN

High voltage supply.

Half-bridge output.

COM

Logic and low side of half-bridge return.

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IR51H310

Lead Assignments

V_CC

R_TC_TCOM

V_BV0

9 Lead SIP w/o Leads 5 & 8

IR51H310

R_T

V_CCUV

V_CLAMP

50%

V_CC

90%

R_T

HIGH

SIDE

C_T

10%

90%

LOW

SIDE

10%

Figure 1. Input/Output Timing Diagram

Figure 2. Deadtime Waveform Definitions

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IR51H310

Package Outline

WORLD HEADQUARTERS: 233 Ka nsa s St., El Se g und o, Ca lifornia 90245, Te l: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Gre e n, Oxte d , Surre y RH8 9BB, UK Te l: ++ 44 1883 732020

IR CANADA: 7321 Vic toria Pa rk Ave ., Suite 201, Ma rkha m , Onta rio L3R 2Z8, Te l: (905) 475 1897

IR GERMANY: Sa a lb urg stra sse 157, 61350 Ba d Hom b urg Te l: ++ 49 6172 96590

IR ITALY: Via Lig uria 49, 10071 Borg a ro, Torino Te l: ++ 39 11 451 0111

IR FAR EAST: 171 (K&H Bld g .), 30-4 Nishi-ike b ukuro 3-Chom e , Toshim a -ku, Tokyo Ja p a n Te l: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outra m Roa d , #10-02 Ta n Boon Lia t Build ing , Sing a p ore 0316 Te l: 65 221 8371

http :/ / www.irf.c om

Sales Offices, Agents and Distributors in Major Cities Throughout the World.

Data and specifications subject to change without notice.

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