IR590SG08H [INFINEON]
Silicon Controlled Rectifier, 800V V(DRM), 800V V(RRM), 1 Element, DIE-2;
| 型号： | IR590SG08H |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 800V V(DRM), 800V V(RRM), 1 Element, DIE-2 栅 栅极 |
| 文件： | 总3页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0213J 10/00
IR590SG..HCB
PHASE CONTROL THYRISTORS
Junction Size:
Square 590 mils
4"
Wafer Size:
VRRM Class:
600 to 1200 V
Glassivated MESA
181RKI Series
Passivation Process:
Reference IR Packaged Part:
Major Ratings and Characteristics
Parameters
Units
Test Conditions
VTM
MaximumOn-stateVoltage
1.2V
TJ = 25°C, IT = 25 A
VDRM/VRRM DirectandReverseBreakdownVoltage
600to1200V TJ = 25°C, IDRM /IRRM = 100 µA
(1)
IGT
Max.RequiredDCGateCurrenttoTrigger
140mA
TJ=25°C,anodesupply = 6V,resistiveload
VGT
IH
Max.RequiredDCGateVoltagetoTrigger
HoldingCurrentRange
2 V
TJ=25°C,anodesupply = 6V,resistiveload
Anode supply = 6 V, resistive load
5 to 180 mA
IL
MaximumLatchingCurrent
900mA
Anode supply = 6 V, resistive load
(1) Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
590 x 590 mils (see drawing)
100 mm, with std. <110> flat
370 µm ± 10 µm
WaferDiameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
130 µm
0.25mmdiameterminimum
Seedrawing
Ink Dot Location
RecommendedStorageEnvironment
Storageinoriginalcontainer,indessicated
nitrogen,withnocontamination
IR590SG..HCB
Bulletin I0213J 10/00
Ordering Information Table
Device Code
IR 590
S
G
12
H
CB
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: S = Solderable SCR
Available Class
Passivation Process: G = Glassivated MESA
Voltage code: Code x 100 = VRRM
06 = 600 V
08 = 800 V
12 = 1200 V
Metallization: H = Silver (Anode) - Silver (Cathode)
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in millimeters
2
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IR590SG..HCB
Bulletin I0213J 10/00
Wafer Layout
TOP VIEW
N° 21 Basic Cells
All dimensions are in millimiters
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
3
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