IRAMX30TP60A_15 [INFINEON]
Integrated gate drivers and bootstrap diodes;
| 型号： | IRAMX30TP60A_15 |
| 厂家： | 
Infineon |
| 描述： | Integrated gate drivers and bootstrap diodes |
| 文件： | 总17页 (文件大小：485K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RevA
IRAMX30TP60A
Series
Integrated Power Hybrid IC for
Appliance Motor Drive Applications
30A, 600V
with Open Emitter Pins
Description
International Rectifier's IRAMX30TP60A is a 30A, 600V Integrated Power Hybrid IC with Open Emitter pins
for advanced Appliance Motor Drives applications such as air conditioning systems and compressor drivers
as well as in light industrial application. IR's technology offers an extremely compact, high performance AC
motor-driver in a single isolated package to simplify design.
This advanced HIC is a combination of IR's low VCE (on) Trench IGBT technology and the industry benchmark
3 phase high voltage, high speed driver in a fully isolated thermally enhanced package. A built-in high
precision temperature monitor and over-current protection feature, along with the short-circuit rated IGBTs
and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using
a single in line package (SIP2) with full transfer mold structure and CTI>600 minimizes PCB space and
resolves isolation problems to heatsink.
Features
x Integrated gate drivers and bootstrap diodes
x Temperature monitor
x Protection shutdown pin
x Low VCE (on) Trench IGBT technology
x Undervoltage lockout for all channels
x Matched propagation delay for all channels
x Schmitt-triggered input logic
x Cross-conduction prevention logic
x Motor Power range 1~2kW / 85~253 Vac
x Isolation 2000V
min and CTI> 600
RMS
RoHS Compliant
Recognized by UL (File Number: E252584)
Absolute Maximum Ratings
VCES / VRRM
IGBT/ FW Diode Blocking Voltage
600
450
V
A
V+
Positive Bus Input Voltage
Io @ TC=25°C
RMS Phase Current at FPWM=6kHz (Note 1)
RMS Phase Current at FPWM=6kHz (Note 1)
Maximum Peak Phase Current (Note 2)
Maximum PWM Carrier Frequency
Maximum Power dissipation per IGBT @ TC =25°C
Isolation Voltage (1min)
30
Io @ TC=100°C
15
Ipk
45
Fp
20
kHz
W
Pd
41
VISO
VRMS
2000
TJ (IGBT & Diode & IC)
Maximum Operating Junction Temperature
Operating Case Temperature Range
Storage Temperature Range
+150
-20 to +100
-40 to +125
0.8 to 1.0
TC
°C
TSTG
T
Mounting torque Range (M3 screw)
Nm
Note 1: Sinusoidal Modulation at V+=400V, VCC=15V, TJ=150°C, MI=0.8, PF=0.6, See Figure 3.
Note 2: tP<100ms, VCC=15V, TC=25°C, FPWM=6kHz.
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1
IRAMX30TP60A
Internal Electrical Schematic – IRAMX30TP60A
V+(10)
VRU (12)
VRV (13)
VRW (14)
Rg1
Rg3
Rg5
VB1 (7)
U, VS1 (8)
VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)
Rg2
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
23 VS1
LO1 16
LO2 15
LO3 14
24 HO1
25 VB1
1 VCC
Rg4
R3
Rg6
Driver IC
2 HIN1
3 HIN2
4 HIN3
HIN1 (15)
HIN2 (16)
HIN3 (17)
LIN2 LIN3
F
8
ITRIP EN RCIN VSS COM
5 LIN1
6
7
9
10
11
12 13
LIN1 (18)
LIN2 (19)
R1
LIN3 (20)
T/ITRIP (21)
R2
RT
THERMISTOR
C
VDD (22)
VSS (23)
2
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IRAMX30TP60A
Absolute Maximum Ratings (Continued)
Symbol
Parameter
Min
Max
Units Conditions
tP=10ms,
TJ=150°C, TC=100°C
Bootstrap Diode Peak Forward
Current
IBDF
---
1.0
A
Bootstrap Resistor Peak Power
(Single Pulse)
High side floating supply offset
voltage
tP=100μs, TC=100°C
ESR series
PBR Peak
VS1,2,3
VB1,2,3
---
VB1,2,3 - 20
-0.3
15.0
VB1,2,3 +0.3
600
W
V
V
High side floating supply voltage
Low Side and logic fixed supply
voltage
Input voltage LIN, HIN, T/Itrip
VCC
VIN
-0.3
-0.3
20
7
V
V
Collector-to-Emitter Breakdown
Voltage
Temperature Coeff. Of
Breakdown Voltage
V(BR)CES
600
---
---
---
V
V/°C
V
VIN=5V, IC=250μA
VIN=5V, IC=1mA
(25°C - 150°C)
IC=12.5A, TJ=25°C
Ʃ9(BR)CESꢀꢁꢀƩ7
VCE(ON)
---
0.3
---
---
---
---
--
1.5
1.7
10
2
Collector-to-Emitter Saturation
Voltage
---
IC=12.5A, TJ=150°C
VIN=5V, V+=600V
VIN=5V, V+=600V, TJ=150°C
IF=12.5A
150
---
Zero Gate Voltage Collector
Current
ICES
Nj$
V
500
1.65
1.55
1.2
1.0
22
2.2
---
VFM
Diode Forward Voltage Drop
---
---
---
---
---
IF=12.5A, TJ=150°C
IF=1A
1.7
---
Bootstrap Diode Forward Voltage
Drop
VBDFM
V
IF=1A, TJ=125°C
TJ=25°C
RBR
Bootstrap Resistor Value
---
ƻ
Ʃ5BR/RBR
Bootstrap Resistor Tolerance
---
±5
%
TJ=25°C
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3
IRAMX30TP60A
Inverter Section Switching Characteristics
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified.
Symbol
EON
Parameter
Min
---
---
---
---
---
---
---
---
---
---
---
Typ
585
185
770
20
Max
---
---
---
---
---
---
---
---
---
---
75
Units Conditions
IC=12.5A, V+=400V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
VCC=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
EOFF
ETOT
EREC
tRR
μJ
ns
μJ
Diode Reverse Recovery energy
Diode Reverse Recovery time
Turn-on Switching Loss
Turn-off Switching Loss
Total Switching Loss
130
780
310
1090
25
See CT1
IC=12.5A, V+=400V
VCC=15V, L=1.2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
EON
EOFF
ETOT
EREC
tRR
Diode Reverse Recovery energy
Diode Reverse Recovery time
Turn-On IGBT Gate Charge
125
50
ns
See CT1
nC
IC=24A, V+=400V, VGE=15V
TJ=150°C, IC=12.5A, VP=600V
V+= 450V,
QG
FULL SQUARE
---
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
VCC=+15V to 0V
TJ=25°C, V+= 400V,
VGE=+15V to 0V
See CT3
5
---
μs
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagramis shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased
at 15V differential (Note 3)
Symbol
VB1,2,3
VS1,2,3
VCC
Definition
Min
Typ
Max
Units
High side floating supply voltage
High side floating supply offset voltage
Low side and logic fixed supply voltage
T/ITRIP input voltage
VS+12.5 VS+15 VS+17.5
V
V
Note 4
13.5
VSS
---
15
---
---
---
---
450
16.5
VSS+5
VSS+5
---
V
VT/ITRIP
VIN
V
Logic input voltage LIN, HIN
High side PWM pulse width
VSS
V
HIN
1
μs
μs
Deadtime
External dead time between HIN and LIN
1
---
Note 3: For more details, see IR21365 data sheet
Note 4: Logic operational for Vs fromCOM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.
(please refer to DT97-3 for more details)
4
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IRAMX30TP60A
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. The VIN and IIN parameters are referenced to COM and
are applicable to all six channels. (Note 3)
Symbol
VIN,th+
Definition
Min
3.0
---
Typ
---
Max
---
Units
V
Positive going input threshold for LIN, HIN
Negative going input threshold for LIN, HIN
VIN,th-
---
0.8
11.6
11.4
---
V
VCCUV+, VBSUV+ VCC/VBS supply undervoltage, Positive going threshold
VCCUV-, VBSUV- VCC/VBS supply undervoltage, Negative going threshold
VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis
10.6
10.4
---
11.1
10.9
0.2
---
V
V
V
IQBS
Quiescent VBS supply current
Quiescent VCC supply current
Offset Supply Leakage Current
Input bias current (OUT=LO)
Input bias current (OUT=HI)
ITRIP threshold Voltage
---
120
2.3
50
μA
mA
μA
μA
μA
V
IQCC
---
---
ILK
---
---
IIN+
---
100
200
4.3
0.15
220
300
4.75
---
IIN-
-1
V(T/ITRIP
)
3.85
---
V(T/ITrip, HYS) ITRIP Input Hysteresis
V
Dynamic Electrical Characteristics
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. Driver only timing unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Units Conditions
Input to Output propagation turn-on
delay time (see fig.11)
TON
---
650
---
ns
IC=12.5A, V+=300V
Input to Output propagation turn-off
delay time (see fig. 11)
TOFF
---
700
---
ns
TFILIN
VIN=0 or VIN=5V
Input filter time (HIN,LIN)
ITRIP Blanking Time
---
---
200
150
---
---
μs
TBLT-ITRIP
VIN=0 or VIN=5V, VITRIP=5V
IC=12.5A, V+=300V
ns
ITRIP to six switch turn-off
propagation delay (see fig. 2)
TITRIP
DT
---
220
---
---
290
40
1.75
360
75
μs
ns
Internal Dead Time injected by
driver
VIN=0 or VIN=5V
Matching Propagation Delay Time
(On & Off) all channels
MT
ns
External dead time> 400ns
TC = 25°C
---
---
7.7
6.7
---
---
Post ITRIP to six switch turn-off clear
time (see fig. 2)
TFLT-CLR
ms
TC = 100°C
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5
IRAMX30TP60A
Thermal and Mechanical Characteristics
Symbol
Rth(J-C)
Rth(J-C)
Rth(C-S)
CTI
Parameter
Min
Typ
2.4
3.7
0.1
---
Max
3.0
5.0
---
Units Conditions
Inverter Operating Condition
Thermal resistance, per IGBT
Thermal resistance, per Diode
Thermal resistance, C-S
Comparative Tracking Index
Curvature of module backside
---
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK
°C/W
---
---
---
600
0
V
---
---
BKCurve
NjP Convex only
Internal NTC - Thermistor Characteristics
Parameter Definition
Min
Typ
Max Units Conditions
R25
R125
B
Resistance
97
100
103
Nƻ TC = 25°C
Nƻ TC = 125°C
Resistance
2.25
2.52
2.80
B-constant (25-50°C)
4165 4250 4335
k
R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range
-40
---
---
---
---
1
125
---
°C
Typ. Dissipation constant
mW/°C TC = 25°C
Nƻ TC=25°C
RT
Resistance
12
---
---
Ʃ5T/RT
Resistor Tolerance
±1
%
TC=25°C
Input-Output Logic Level Table
V+
ITRIP
HIN1,2,3
LIN1,2,3
U,V,W
V+
0
Ho
0
0
0
0
1
0
1
1
0
X
1
0
1
0
X
Hin1,2,3
(15,16,17)
U,V,W
(8,5,2)
Off
Off
Off
IC
Driver
Lin1,2,3
Lo
(18,19,20)
6
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IRAMX30TP60A
HIN1,2,3
LIN1,2,3
T/ITRIP
U,V,W
Figure1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
50%
50%
T/ITRIP
U,V,W
50%
50%
TT/ITRIP
TFLT-CLR
Figure 2. T/ITRIP Timing Waveform
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.
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7
IRAMX30TP60A
Module Pin-Out Description
Pin
1
Name
VB3
Description
High Side Floating Supply Voltage 3
Output 3 - High Side Floating Supply Offset Voltage
none
U, VS3
NA
2
3
VB2
4
High Side Floating Supply voltage 2
Output 2 - High Side Floating Supply Offset Voltage
none
V,VS2
NA
5
6
VB1
7
High Side Floating Supply voltage 1
Output 1 - High Side Floating Supply Offset Voltage
none
W,VS1
8
9
NA
V+
NA
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Positive Bus Input Voltage
none
LE1
Low Side Emitter Connection - Phase 1
Low Side Emitter Connection - Phase 2
Low Side Emitter Connection - Phase 3
Logic Input High Side Gate Driver - Phase 1
Logic Input High Side Gate Driver - Phase 2
Logic Input High Side Gate Driver - Phase 3
Logic Input Low Side Gate Driver - Phase 1
Logic Input Low Side Gate Driver - Phase 2
Logic Input Low Side Gate Driver - Phase 3
Temperature Monitor and Shut-down Pin
+15V Main Supply
LE2
LE3
HIN1
HNI2
HIN3
LIN1
LIN2
LIN3
T/ITRIP
VCC
VSS
Negative Main Supply
1
23
8
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IRAMX30TP60A
Typical Application Connection IRAMX30TP60A
BOOT-STRAP
CAPACITORS
VB3
Cb
VS3
W
VB2
VS3
3-Phase AC
MOTOR
V
CURRENT SENSING CAN USE A
SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN
VB1
VS1
U
V+
DC BUS
CAPACITORS
LE1
LE2
LE3
PHASE LEG
CURRENT
SENSE
PGND
HIN1
HIN2
HIN3
LIN1
LIN2
LIN3
CONTROLLER
ITRIP
Vcc (15 V)
VSS
TEMP
SENSE
O/C
SENSE
(ACTIVE LOW)
O/C
SENSE
(ACTIVE LOW)
DGND
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins
will further improve performance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors
shown connected between these terminals should be located very close to the module pins. Additional high
frequency capacitors, typically 0.1μF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made
based on IR design tip DT04-4, application note AN-1044 or Figure 10. Bootstrap capacitor value must be
selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings
Table on page 3).
4. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent
condition must be cleared before resuming operation.
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9
IRAMX30TP60A
22
20
18
16
14
12
10
8
TC = 80ºC
TC = 90ºC
TC = 100ºC
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
PWM Sw itching Frequency - kHz
Figure 4. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
18
16
14
12
10
8
FPWM = 6kHz
FPWM = 10kHz
FPWM = 16kHz
6
4
2
0
1
10
Modulation Frequency - Hz
100
Figure 5. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, TC=100°C, MI=0.8, PF=0.6
10
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IRAMX30TP60A
300
250
200
150
100
50
IOUT = 18A
IOUT = 15A
IOUT = 12A
0
0
2
4
6
8
10
12
14
16
18
20
PWM Sw itching Frequency - kHz
Figure 6. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
300
250
200
150
100
50
FPWM = 16kHz
FPWM = 10kHz
FPWM = 6kHz
0
0
2
4
6
8
10
Output Phase Current - ARMS
Figure 7. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
12
14
16
18
20
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11
IRAMX30TP60A
160
140
120
100
80
FPWM = 6kHz
FPWM = 10kHz
FPWM = 16kHz
60
40
0
2
4
6
8
10
12
14
16
18
20
Output Phase Current - ARMS
Figure 8. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
160
TJ avg = 1.33 x TTherm + 14
150
140
130
120
110
100
103
90
65
70
75
80
85
90
95
100
105
110
115
Internal Thermistor Temperature Equivalent Read Out - °C
Figure 9. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V+=400V, Iphase=6Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6
12
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IRAMX30TP60A
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Max
Avg
Min
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Thermistor Temperature - °C
Figure 10. Thermistor Readout vs. Temperature (7.5kohm REXT pull-down resistor) and
Normal Thermistor Resistance values vs. Temperature Table.
16.0
15.0
14.0
13.0
12.0
11.0
10.0
9.0
15ȝF
ꢀꢁȝF
8.0
7.0
ꢄꢃꢅȝF
6.0
5.0
ꢆꢃꢇȝF
ꢂꢃꢂȝF
4.0
3.0
2.0
1.0
0.0
0
5
10
15
20
PWM Frequency - kHz
Figure 11. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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13
IRAMX30TP60A
Figure 11. Switching Parameter Definitions
IC
VCE
VCE
IC
90% IC
HIN/LIN
50%
HIN/LIN
50%
90% IC
H
IN/LIN
HIN/LIN
10%
VCE
10% IC
10% IC
TOFF
tf
TON
tr
Figure 11a. Input to Output propagation turn-on
delay time.
Figure 11b. Input to Output propagation turn-off
delay time.
IF
VCE
HIN/LIN
Irr
trr
Figure 11c. Diode Reverse Recovery.
14
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IRAMX30TP60A
V+
5V
Ho
Lo
I
N
Hin1,2,3
Lin1,2,3
IC
Driver
U,V,W
I
O
Figure CT1. Switching Loss Circuit
V+
Ho
Hin1,2,3
I
N
1k
10k
IC
V
CC
U,V,W
Io
Driver
Lin1,2,3
I
O
5VZD
Lo
IN
Figure CT2. S.C.SOA Circuit
V+
Ho
I
N
Hin1,2,3
1k
10k
V
IC
Driver
CC
U,V,W
I
O
5VZD
Lo
Lin1,2,3
IN
Io
Figure CT3. R.B.SOA Circuit
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15
IRAMX30TP60A
Package Outline IRAMX30TP60A
missing pin : 3,6,9,11
note5
note3
note4
䐟
P
4DB00
IRAMX30TP60A
㻞㻟
㻝
note2
䐡
note1: Unit Tolerance is +0.5mm,
䚷䚷䚷 Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
䚷䚷䚷䚷 Font shown on Module.
䐠
note4: Lot Code Marking.
Characters Font in this drawing differs from
䚷䚷䚷䚷 Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
Dimensions in mm
For mounting instruction see AN-1049
16
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IRAMX30TP60A
Package Outline IRAMX30TP60A-2
missing pin : 3,6,9,11
note5
note3
note4
䐟
㻼㻌㻌㻠㻰㻮㻜㻜
IRAMX30TP60A-2
㻞㻟
㻝
note2
䐡
note1: Unit Tolerance is +0.5mm,
䚷䚷䚷 Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
䚷䚷䚷䚷 Font shown on Module.
䐠
note4: Lot Code Marking.
Characters Font in this drawing differs from
䚷䚷䚷䚷 Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
Dimensions in mm
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
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2013-07-29
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