IRF1010ZLPBF [INFINEON]

HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET


型号：	IRF1010ZLPBF
厂家：	Infineon
描述：	HEXFET㈢ Power MOSFET HEXFET㈢功率MOSFET
文件：	总13页 (文件大小：355K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 95361

IRF1010ZPbF

IRF1010ZSPbF

IRF1010ZLPbF

AUTOMOTIVE MOSFET

Features

HEXFET^®Power MOSFET

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

V_DSS= 55V

Repetitive Avalanche Allowed up to Tjmax

R_DS(on)= 7.5mΩ

Lead-Free

Description

I_D= 75A

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processingtechniquestoachieveextremelylowon-

resistance per silicon area. Additional features of

thisdesign area175°Cjunctionoperatingtempera-

ture, fast switching speed and improved repetitive

avalanche rating . These features combine to make

thisdesignanextremelyefficientandreliabledevice

foruseinAutomotiveapplicationsandawidevariety

of other applications.

D²Pak

IRF1010ZS

TO-262

IRF1010ZL

TO-220AB

IRF1010Z

Absolute Maximum Ratings

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

@ T = 25°C

360

140

@T = 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

0.90

± 20

W/°C

E_{AS (Thermally limited)}

130

180

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

E_AR

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.11

–––

Units

°C/W

R_θJC

Junction-to-Case

R_θCS

R_θJA

0.50

–––

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount)

www.irf.com

6/3/04

IRF1010ZS/LPbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

55 ––– –––

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

∆V_(BR)DSS/∆T_J

R_DS(on)

Breakdown Voltage Temp. Coefficient ––– 0.049 ––– V/°C Reference to 25°C, I_D= 1mA

mΩ

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

–––

2.0

5.8

–––

7.5

4.0

–––

V_GS= 10V, I_D= 75A

V_DS= V_GS, I_D= 250µA

V_DS= 25V, I_D= 75A

V_GS(th)

gfs

Forward Transconductance

I_DSS

Drain-to-Source Leakage Current

–––

µA V_DS= 55V, V_GS= 0V

250

200

_DS= 55V, V_GS= 0V, T_J= 125°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

nA V_GS= 20V

––– -200

_GS= -20V

I_D= 75A

_DS= 44V

Q_g

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

–––

V_GS= 10V

V_DD= 28V

I_D= 75A

Rise Time

150

t_d(off)

t_f

Turn-Off Delay Time

ns R_G= 6.8 Ω

V_GS= 10V

Fall Time

L_D

Internal Drain Inductance

4.5

Between lead,

nH 6mm (0.25in.)

from package

L_S

Internal Source Inductance

–––

7.5

–––

and center of die contact

V_GS= 0V

_DS= 25V

pF ƒ = 1.0MHz

V_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

_GS= 0V, V_DS= 44V, ƒ = 1.0MHz

C_iss

Input Capacitance

––– 2840 –––

C_oss

Output Capacitance

–––

420

250

–––

C_rss

Reverse Transfer Capacitance

Output Capacitance

C_oss

––– 1630 –––

C_oss

Output Capacitance

–––

360

560

–––

C_osseff.

Effective Output Capacitance

V_GS= 0V, V_DS= 0V to 44V

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

–––

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

–––

360

integral reverse

(Body Diode)

p-n junction diode.

Diode Forward Voltage

–––

1.3

T = 25°C, I = 75A, V = 0V

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

ns T = 25°C, I = 75A, V_DD= 25V

J F

di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

www.irf.com

IRF1010ZS/LPbF

1000

100

1000

100

V_GS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

V_GS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

TOP

BOTTOM 4.5V

4.5V

20µs PULSE WIDTH

Tj = 25°C

20µs PULSE WIDTH

Tj = 175°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

1000

= 25°C

= 175°C

100

= 25°C

= 10V

20µs PULSE WIDTH

= 25V

20µs PULSE WIDTH

4.0

5.0

6.0

7.0

8.0

9.0

10.0

11.0

, Gate-to-Source Voltage (V)

Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

Vs. Drain Current

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IRF1010ZS/LPbF

5000

= 0V,

= C

f = 1 MHZ

I = 75A

+ C , C

SHORTED

iss

= 44V

VDS= 28V

= C

rss

oss

4000

3000

2000

1000

= C + C

Ciss

Coss

Crss

100

, Drain-to-Source Voltage (V)

100

Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000.0

10000

1000

100

OPERATION IN THIS AREA

LIMITED BY R (on)

100.0

10.0

1.0

= 175°C

100µsec

1msec

= 25°C

Tc = 25°C

Tj = 175°C

Single Pulse

10msec

= 0V

1.8

0.1

100

1000

0.2

0.6

1.0

1.4

, Drain-toSource Voltage (V)

, Source-toDrain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

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IRF1010ZS/LPbF

100

2.5

2.0

1.5

1.0

0.5

= 75A

LIMITED BY PACKAGE

= 10V

100

125

150

175

-60 -40 -20

20 40 60 80 100 120 140 160 180

, Case Temperature (°C)

, Junction Temperature (°C)

Fig 10. Normalized On-Resistance

Fig 9. Maximum Drain Current Vs.

Vs. Temperature

Case Temperature

D = 0.50

0.20

0.10

0.05

0.1

0.01

0.02

0.01

Notes:

SINGLE PULSE

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

( THERMAL RESPONSE )

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF1010ZS/LPbF

250

200

150

100

15V

I_D

31A

53A

TOP

BOTTOM 75A

DRIVER

D.U.T

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

100

125

150

175

Starting T , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Fig 12b. Unclamped Inductive Waveforms

Vs. Drain Current

10 V

4.0

3.0

2.0

1.0

= 250µA

Charge

Fig 13a. Basic Gate Charge Waveform

VCC

DUT

-75 -50 -25

25 50 75 100 125 150 175

, Temperature ( °C )

Fig 14. Threshold Voltage Vs. Temperature

Fig 13b. Gate Charge Test Circuit

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IRF1010ZS/LPbF

1000

100

Duty Cycle = Single Pulse

Allowed avalanche Current vs

avalanche pulsewidth, tav

∆

assuming

Tj = 25°C due to

0.01

avalanche losses. Note: In no

case should Tj be allowed to

exceed Tjmax

0.05

0.10

0.1

1.0E-08

1.0E-07

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

140

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

TOP

BOTTOM 10% Duty Cycle

= 75A

Single Pulse

120

100

4. P_{D (ave)}= Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I_av= Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

T_jmax(assumed as 25°C in Figure 15, 16).

t_{av =}Average time in avalanche.

100

125

150

175

D = Duty cycle in avalanche = t_av·f

Z_thJC(D, t_av) = Transient thermal resistance, see figure 11)

Starting T , Junction Temperature (°C)

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

I_av= 2DT/ [1.3·BV·Z_th]

Fig 16. Maximum Avalanche Energy

E_{AS (AR)}= P_{D (ave)}·t_av

Vs. Temperature

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IRF1010ZS/LPbF

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

90%

10%

d(on)

d(off)

Fig 18b. Switching Time Waveforms

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IRF1010ZS/LPbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

3.78 (.149)

- B -

10.29 (.405)

2.87 (.113)

2.62 (.103)

4.69 (.185)

4.20 (.165)

3.54 (.139)

1.32 (.052)

1.22 (.048)

- A -

6.47 (.255)

6.10 (.240)

15.24 (.600)

14.84 (.584)

LEAD ASSIGNMENTS

1 - GATE

1.15 (.045)

MIN

HEXFET

IGBTs, CoPACK

2 - DRAIN

1- GATE

3 - SOURCE

1- GATE

2- DRAIN

3- SOURCE

2- COLLECTOR

3- EMITTER

4- COLLECTOR

4 - DRAIN

4- DRAIN

14.09 (.555)

13.47 (.530)

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.55 (.022)

0.46 (.018)

1.40 (.055)

1.15 (.045)

0.36 (.014)

B A M

2.92 (.115)

2.64 (.104)

2.54 (.100)

NOTES:

DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

CONTROLLING DIMENSION : INCH

OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

EXAMPLE: T HIS IS AN IRF1010

LOT CODE 1789

PART NUMBER

ASS EMBLED ON WW 19, 1997

IN THE AS S EMBLY LINE "C"

INTERNATIONAL

RECTIFIER

LOGO

Note: "P" in assembly line

position indicates "Lead-Free"

DAT E CODE

YEAR 7 = 1997

WEEK 19

AS S E MB LY

LOT CODE

LINE C

www.irf.com

IRF1010ZS/LPbF

D²Pak Package Outline

Dimensions are shown in millimeters (inches)

D²Pak Part Marking Information (Lead-Free)

T H IS IS AN IR F 530S WIT H

P AR T N U MB E R

D AT E COD E

L OT COD E 8024

AS S E MB L E D ON WW 02, 2000

IN T H E AS S E MB L Y L IN E "L "

IN T E R N AT ION AL

R E CT IF IE R

L OGO

F 530S

N ote: "P " in as s embly line

pos ition indicates "L ead-F ree"

YE AR

WE E K 02

L IN E

0 = 2000

AS S E MB L Y

L OT COD E

P AR T N U MB E R

IN T E R N AT ION AL

R E CT IF IE R

L OGO

F 530S

D AT E COD E

D E S IGN AT E S L E AD-F R E E

P R OD U CT (OP T ION AL )

AS S E M B L Y

L OT CODE

YE AR

W E E K 02

A = AS S E MB L Y S IT E CODE

0 = 2000

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IRF1010ZS/LPbF

TO-262 Package Outline

IGBT

1- GATE

2- COLLECTOR

3- EMITTER

TO-262 Part Marking Information

E XAMPLE : THIS IS AN IRL3103L

LOT CODE 1789

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

ASSEMBLED ON WW 19, 1997

IN THE ASSEMBLY LINE "C"

DATE CODE

YEAR 7 = 1997

WEEK 19

Note: "P" in assembly line

position indicates "Lead-Free"

ASSEMBLY

LOT CODE

LINE C

PART NUMBER

DATE CODE

INTERNATIONAL

RECTIFIER

LOGO

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

YEAR 7 = 1997

ASSEMBLY

LOT CODE

WEEK 19

A= ASSEMBLY SITE CODE

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IRF1010ZS/LPbF

D²Pak Tape & Reel Infomation

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

1.85 (.073)

1.65 (.065)

11.60 (.457)

11.40 (.449)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

TRL

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

Notes:

ꢀ

Limited by T_Jmax, see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

Limited by T_Jmax, starting T_J= 25°C, L = 0.05mH

This value determined from sample failure population. 100%

tested to this value in production.

R_G= 25Ω, I_AS= 75A, V_GS=10V. Part not

recommended for use above this value.

This is only applied to TO-220AB pakcage.

Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

C_osseff. is a fixed capacitance that gives the

same charging time as C_osswhile V_DSis rising

This is applied to D²Pak, when mounted on 1" square PCB (FR-

4 or G-10 Material). For recommended footprint and soldering

techniques refer to application note #AN-994.

from 0 to 80% V_DSS

TO-220AB package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101]market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 06/04

www.irf.com

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/

IRF1010ZLPBF [INFINEON]

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