IRF1010ZSTRR [INFINEON]

Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3;


型号：	IRF1010ZSTRR
厂家：	Infineon
描述：	Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 晶体晶体管开关脉冲局域网
文件：	总8页 (文件大小：196K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 91670

IRF1010E

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

V_DSS= 60V

l 175°C Operating Temperature

l Fast Switching

R_DS(on)= 12mΩ

l Fully Avalanche Rated

I_D= 84A

Description

AdvancedHEXFET^®PowerMOSFETsfromInternational

Rectifierutilizeadvancedprocessingtechniquestoachieve

extremelylowon-resistancepersiliconarea. Thisbenefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

knownfor,providesthedesignerwithanextremelyefficient

andreliabledeviceforuseinawidevarietyofapplications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

330

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.4

V_GS

I_AR

Gate-to-Source Voltage

± 20

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

4.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.75

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

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3/16/01

IRF1010E

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

60 ––– –––

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient ––– 0.064 ––– V/°C Reference to 25°C, I_D= 1mA

R_DS(on)

V_GS(th)

g_fs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

––– ––– 12

mΩ V_GS= 10V, I_D= 50A

2.0

––– 4.0

––– –––

V_DS= V_GS, I_D= 250µA

V_DS= 25V, I_D= 50A

V_DS= 60V, V_GS= 0V

V_DS= 48V, V_GS= 0V, T_J= 150°C

V_GS= 20V

Forward Transconductance

––– ––– 25

––– ––– 250

––– ––– 100

––– ––– -100

––– ––– 130

––– ––– 28

––– ––– 44

I_DSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

I_GSS

V_GS= -20V

Q_g

I_D= 50A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= 48V

V_GS= 10V, See Fig. 6 and 13

–––

12 –––

78 –––

48 –––

53 –––

V_DD= 30V

I_D= 50A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 3.6Ω

V_GS= 10V, See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

V_GS= 0V

4.5

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

–––

7.5

C_iss

C_oss

C_rss

E_AS

Input Capacitance

––– 3210 –––

––– 690 –––

––– 140 –––

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

Single Pulse Avalanche Energy

ƒ = 1.0MHz, See Fig. 5

––– 1180ꢀ320 mJ I_AS= 50A, L = 260µH

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

330

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

––– ––– 1.3

––– 73 110

––– 220 330

T_J= 25°C, I_S= 50A, V_GS= 0V

T_J= 25°C, I_F= 50A

Q_rr

t_on

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 400µs; duty cycle ≤ 2%.

max. junction temperature. (See fig. 11)

ꢀThis is a typical value at device destruction and represents

operation outside rated limits.

This is a calculated value limited to T_J= 175°C .

Starting T_J= 25°C, L = 260µH

R_G= 25Ω, I_AS= 50A, V_GS=10V (See

Calculated continuous current based on maximum allowable

Figure 12)

I_SD≤ 50A, di/dt ≤ 230A/µs, V_DD≤ V_(BR)DSS

junction temperature. Package limitation current is 75A.

T_J≤ 175°C

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IRF1010E

1000

100

1000

100

VGS

15V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

TOP

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4.5V

20µs PULSE WIDTH

T = 175 C

20µs PULSE WIDTH

T = 25 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

3.0

84A

2.5

2.0

1.5

1.0

0.5

0.0

T = 25 C

T = 175 C

100

= 25V

20µs PULSE WIDTH

= 10V

-60 -40 -20

20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF1010E

6000

= 50A

= 0V,

f = 1 MHZ

= C + C

SHORTED

iss

= 48V

= 30V

= 12V

= C

5000

4000

3000

2000

1000

rss

= C + C

oss

Ciss

Coss

Crss

FOR TEST CIRCUIT

SEE FIGURE 13

, Drain-to-Source Voltage (V)

100

120

140

, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000

100

1000

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

T = 175 C

100µsec

1msec

T = 25 C

Tc = 25°C

Tj = 175°C

Single Pulse

10msec

100

= 0 V

0.1

0.0

0.6

1.2

1.8

2.4

1000

,Source-to-Drain Voltage (V)

, Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

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IRF1010E

100

R_D

V_DS

LIMITED BY PACKAGE

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

175

, Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.1

0.10

0.05

SINGLE PULSE

(THERMAL RESPONSE)

0.02

0.01

Notes:

1. Duty factor D =

t / t

1 2

2. Peak T = P

x Z

+ T

thJC C

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF1010E

800

600

400

200

15V

TOP

20A

35A

50A

BOTTOM

DR IV ER

D S

D.U .T

D D

A S

V0_GV_S

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

100

125

150

175

Starting T , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

V_GS

D.U.T.

3mA

Current Sampling Resistors

Charge

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

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IRF1010E

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T*

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

[

=10V

] ***

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

[

]

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

]

Ripple ≤ 5%

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig 14. For N-channel HEXFET^®power MOSFETs

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IRF1010E

Package Outline

TO-220AB

Dimensions are shown in millimeters (inches)

10.54 (.415)

10.29 (.405)

- B

3.78 (.149)

3.54 (.139)

2.87 (.113)

2.62 (.103)

4.69 (.185)

4.20 (.165)

1.32 (.052)

1.22 (.048)

- A

6.47 (.255)

6.10 (.240)

15.24 (.600)

14.84 (.584)

1.15 (.045)

M IN

LEAD ASSIG NM ENTS

- GATE

- DRAIN

- SOU RC E

- DRAIN

14.09 (.555)

13.47 (.530)

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.55 (.022)

0.46 (.018)

1.40 (.055)

1.15 (.045)

0.36 (.014)

2.92 (.115)

2.64 (.104)

2.54 (.100)

N OTES:

D IM ENSIONING

TOLERANCING PER ANSI Y14.5M , 1982.

OUTLINE CONFORM S TO JEDEC OUTLINE TO-220AB.

HEATSINK LEAD M EASUREM ENTS DO NOT INCLU DE BURRS.

C ONTROLLING DIM ENSION : INCH

Part Marking Information

TO-220AB

EXAMPLE : THIS IS AN IR F1010

W ITH ASSEM BLY

INTERNATIONAL

RECTIFIER

LOGO

PART NU M BER

LOT C ODE 9B1M

IR F1010

9246

D ATE COD E

(YYW W )

ASSEMBLY

LOT

CO DE

YEAR

= W EEK

W W

Data and specifications subject to change without notice.

This product has been designed and qualified for the automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 3/01

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