IRF1310NSTRR [INFINEON]

Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3;


型号：	IRF1310NSTRR
厂家：	Infineon
描述：	Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 局域网开关脉冲晶体管
文件：	总11页 (文件大小：166K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 91514B

IRF1310NS/L

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount (IRF1310NS)

l Low-profilethrough-hole(IRF1310NL)

l 175°C Operating Temperature

l Fast Switching

V_DSS=100V

R_DS(on)= 0.036Ω

l Fully Avalanche Rated

I_D= 42A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

Thethrough-holeversion(IRF1310NL)isavailableforlow-

profile applications.

T O -262

Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

140

3.8

160

1.1

± 20

420

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

5.0

-55 to + 175

300 (1.6mm from case )

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.95

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient ( PCB Mounted,steady-state)**

5/13/98

IRF1310NS/L

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

100 ––– –––

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, I_D= 1mAꢀ

R_DS(on)

V_GS(th)

g_fs

Static Drain-to-Source On-Resistance ––– ––– 0.036

Ω

V_GS= 10V, I_D= 22A

V_DS= V_GS, I_D= 250µA

V_DS= 25V, I_D= 22Aꢀ

V_DS= 100V, V_GS= 0V

V_DS= 80V, V_GS= 0V, T_J= 150°C

V_GS= 20V

Gate Threshold Voltage

2.0

––– 4.0

––– –––

Forward Transconductance

––– ––– 25

––– ––– 250

––– ––– 100

––– ––– -100

––– ––– 110

––– ––– 15

––– ––– 58

µA

I_DSS

I_GSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= -20V

Q_g

I_D= 22A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

V_DS= 80V

V_GS= 10V, See Fig. 6 and 13 ꢀ

V_DD= 50V

–––

11 –––

56 –––

45 –––

40 –––

RiseTime

I_D= 22A

t_d(off)

t_f

Turn-Off Delay Time

FallTime

R_G= 3.6Ω

R_D= 2.9Ω, See Fig. 10 ꢀ

Between lead,

L_S

Internal Source Inductance

–––

7.5

and center of die contact

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

––– 1900 –––

––– 450 –––

––– 230 –––

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

ƒ = 1.0MHz, See Fig. 5ꢀ

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

I_S

MOSFETsymbol

showing the

––– –––

I_SM

Pulsed Source Current

(Body Diode) ꢀ

integral reverse

p-n junction diode.

140

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

––– ––– 1.3

––– 180 270

––– 1.2 1.8

T_J= 25°C, I_S=22A, V_GS= 0V

T_J= 25°C, I_F= 22A

µC

Q_rr

t_on

di/dt = 100A/µs ꢀ

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 300µs; duty cycle ≤ 2%.

ꢀ Uses IRF1310N data and test conditions

max. junction temperature. ( See fig. 11 )

Starting T_J= 25°C, L = 1.7mH

R_G= 25Ω, I_AS= 22A. (See Figure 12)

I_SD≤ 22A, di/dt ≤ 180A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended soldering techniques refer to application note #AN-994.

IRF1310NS/L

1000

100

1000

100

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

VGS

15V

TOP

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4.5V

20us PULSE WIDTH

T = 175 ^oC

T = 25 ^oC

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

3.0

36A

2.5

100

2.0

1.5

1.0

0.5

0.0

T = 25^oC

T = 175^oC

V_DS= 50V

20µS PULSE WIDTH

= 10V

-60 -40 -20

20 40 60 80 100 120 140 160 180

T , Junction Temperature ( ^oC)

4.0

5.0

6.0

7.0

8.0

9.0

10.0

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

IRF1310NS/L

3500

= 0V,

f = 1MHz

= 22A

= C + C

SHORTED

= 80V

= 50V

= 20V

iss

gd ,

= C

3000

2500

2000

1500

1000

500

rss

= C + C

oss

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

120

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

1000

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

100

10us

100us

1ms

= 25^oC

10ms

= 175^oC

= 0 V

Single Pulse

0.1

0.2

100

1000

0.4

0.6

0.8

1.0

1.2

1.4

1.6

, Drain-to-Source Voltage (V)

,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

IRF1310NS/L

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

175

, Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

SINGLE PULSE

0.01

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

1 2

2. Peak T = P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case

IRF1310NS/L

1000

800

600

400

200

TOP

9.0A

16A

BOTTOM 22A

1 5V

DRIVER

D.U.T

D D

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

175

(BR)DSS

Starting T , Junction Temperature ( ^oC)

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

Current Regulator

Fig12b. UnclampedInductiveWaveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

10 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

IRF1310NS/L

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

Driver Gate Drive

P.W.

Period

D =

P.W.

=10V

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig14. ForN-ChannelHEXFETS

IRF1310NS/L

D²Pak Package Outline

10.54 (.415)

10.29 (.405)

10.16 (.400)

REF.

- B -

1.32 (.052)

4.69 (.185)

4.20 (.165)

1.40 (.055)

- A -

M AX.

1.22 (.048)

6.47 (.255)

6.18 (.243)

1.78 (.070)

1.27 (.050)

15.49 (.610)

14.73 (.580)

2.79 (.110)

2.29 (.090)

2.61 (.103)

2.32 (.091)

5.28 (.208)

4.78 (.188)

8.89 (.350)

REF.

1.40 (.055)

1.14 (.045)

1.39 (.055)

1.14 (.045)

0.55 (.022)

0.46 (.018)

0.93 (.037)

0.69 (.027)

5.08 (.200)

0.25 (.010)

B A M

M INIMUM RECOM MENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

LEAD ASSIGNMENTS

1 - GATE

NO TES:

DIM ENSIONS AFTER SOLDER DIP.

17.78 (.700)

2 - DRAIN

3 - SOURCE

DIM ENSIONING & TOLERANCING PER ANSI Y14.5M , 1982.

CONTROLLING DIM ENSION : INCH.

HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.

3.81 (.150)

2.54 (.100)

2.08 (.082)

Part Marking Information

D²Pak

INTERNATIONAL

RECTIFIER

LOGO

PART NUM BER

F530S

9246

DATE CODE

(YYW W )

ASSEM BLY

YEAR

= W EEK

LOT CODE

W W

IRF1310NS/L

Package Outline

TO-262 Outline

Part Marking Information

TO-262

IRF1310NS/L

Tape & Reel Information

D²Pak

TRR

1 .6 0 (.063 )

1 .5 0 (.059 )

1.60 (.06 3)

1.50 (.05 9)

4.10 (.16 1)

3.90 (.15 3)

0.3 68 (.0145)

0.3 42 (.0135)

FEED DIRECTION

1.85 (.07 3)

11.60 (.457)

11.40 (.449)

1.65 (.06 5)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

TRL

1.75 (.069)

1.25 (.049)

10.90 (.42 9)

10.70 (.42 1)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

M A X.

60.00 (2.362)

MIN .

30.40 (1.197)

M AX.

NO TES :

1. CO M FO RM S TO EIA-418.

2. CO N TR O LLIN G D IM ENSIO N : M ILLIM ET ER .

3. DIM ENSIO N MEASUR ED

26.40 (1.039)

24.40 (.961)

@ HU B.

4. INC LUD ES FLAN G E D ISTO R TIO N

O UTER EDG E.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

5/98

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/

IRF1310NSTRR [INFINEON]

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