IRF1404ZGPBF [INFINEON]
Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3;
| 型号： | IRF1404ZGPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96236A
IRF1404ZGPbF
Features
l
l
l
l
l
l
l
Advanced Process Technology
HEXFET® Power MOSFET
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
D
VDSS = 40V
RDS(on) = 3.7mΩ
G
Halogen-Free
Description
ID = 75A
S
This HEXFET® Power MOSFET utilizes the latest
processingtechniquestoachieveextremelylowon-
resistance per silicon area. Additional features of
thisdesign area175°Cjunctionoperatingtemperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
thisdesignanextremelyefficientandreliabledevice
for use in a wide variety of applications.
TO-220AB
IRF1404ZGPbF
Absolute Maximum Ratings
Parameter
Max.
190
130
75
Units
(Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ T = 25°C
C
D
D
D
@ T = 100°C
C
A
(Package Limited)
@ T = 25°C
C
750
220
DM
P
@T = 25°C
Power Dissipation
C
W
D
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
1.5
± 20
W/°C
V
V
GS
EAS (Thermally limited)
320
480
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
E
AS (Tested )
IAR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
EAR
mJ
T
J
Operating Junction and
-55 to + 175
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.65
–––
62
Units
RθJC
Junction-to-Case
RθCS
RθJA
0.50
–––
°C/W
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
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1
07/07/10
IRF1404ZGPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
40 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
V
Breakdown Voltage Temp. Coefficient ––– 0.033 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
2.7
–––
–––
–––
–––
–––
–––
100
31
3.7
4.0
VGS = 10V, ID = 75A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 75A
VGS(th)
V
V
gfs
Forward Transconductance
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
IDSS
Drain-to-Source Leakage Current
µA
V
DS = 40V, VGS = 0V
250
200
-200
150
–––
–––
–––
–––
–––
–––
–––
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA VGS = 20V
VGS = -20V
ID = 75A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = 32V
VGS = 10V
42
18
VDD = 20V
Rise Time
110
36
ID = 75A
td(off)
tf
Turn-Off Delay Time
ns RG = 3.0 Ω
VGS = 10V
Fall Time
58
LD
Internal Drain Inductance
4.5
Between lead,
nH 6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Ciss
Input Capacitance
––– 4340 –––
––– 1030 –––
VGS = 0V
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
–––
––– 3300 –––
––– 920 –––
550
–––
pF ƒ = 1.0MHz
Coss
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Coss eff.
Effective Output Capacitance
––– 1350 –––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
Continuous Source Current
–––
–––
75
MOSFET symbol
S
(Body Diode)
A
showing the
I
Pulsed Source Current
–––
–––
750
integral reverse
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
28
1.3
42
51
V
T = 25°C, I = 75A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 75A, VDD = 20V
J F
rr
di/dt = 100A/µs
Q
t
34
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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IRF1404ZGPbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
1
4.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
200
1000
T
= 25°C
J
T
= 175°C
J
T
= 175°C
J
160
120
80
100
10
1
T
= 25°C
J
40
V
= 15V
V
= 15V
DS
20µs PULSE WIDTH
DS
20µs PULSE WIDTH
0
4.0
5.0
V
6.0
7.0
8.0
9.0
10.0
11.0
0
40
80
120
160
, Gate-to-Source Voltage (V)
I
Drain-to-Source Current (A)
GS
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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3
IRF1404ZGPbF
8000
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I = 75A
D
= C + C , C SHORTED
iss
gs gd ds
V
= 32V
DS
VDS= 20V
C
= C
rss
gd
C
= C + C
oss
ds
gd
6000
4000
2000
0
Ciss
4
Coss
Crss
0
0
40
G
80
120
160
1
10
100
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10000
1000
100
10
1000.0
100.0
10.0
1.0
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
10msec
100
GS
1
0.1
0
1
10
1000
0.2
0.6
1.0
1.4
1.8
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF1404ZGPbF
200
160
120
80
2.0
1.5
1.0
0.5
I
= 75A
LIMITED BY PACKAGE
D
V
= 10V
GS
40
0
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current Vs.
Vs. Temperature
Case Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF1404ZGPbF
600
500
400
300
200
100
0
15V
ID
31A
53A
TOP
BOTTOM 75A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
4.0
3.0
2.0
1.0
GS
GD
V
G
I
= 250µA
D
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
V
GS
T
3mA
J
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRF1404ZGPbF
10000
1000
100
10
Allowed avalanche Current vs
avalanche pulsewidth, tav
Duty Cycle = Single Pulse
assuming
Tj = 25°C due to
∆
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
0.05
0.10
1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
tav (sec)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
400
TOP
BOTTOM 10% Duty Cycle
= 75A
Single Pulse
I
D
300
200
100
0
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Vs. Temperature
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7
IRF1404ZGPbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRF1404ZGPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRF1404ZGPbF
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRFB4310GPBF
PART NUMBER
DATE CODE:
INTERNATIONAL
RECTIFIER
LOGO
Note: "G" suffix in part number
indicates "Halogen - F ree"
Y= LAST DIGIT OF
CAL E NDAR YE AR
Note: "P" in assembly line position
indicates "L ead - F ree"
AS S E MB L Y
LOT CODE
WW= WORK WE E K
X= FACTORY CODE
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
ꢀ
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.11mH
This value determined from sample failure population. 100%
tested to this value in production.
R
G = 25Ω, IAS = 75A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
This is only applied to TO-220AB pakcage.
from 0 to 80% VDSS
.
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2010
10
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相关型号：
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Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRF1404ZSTRRPBF
Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
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