IRF1405ZLPBF [INFINEON]

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9mヘ , ID = 75A ); 汽车MOSFET （ VDSS = 55V ， RDS （ ON） = 4.9米ヘ， ID = 75A ）


型号：	IRF1405ZLPBF
厂家：	Infineon
描述：	AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9mヘ , ID = 75A ) 汽车MOSFET （ VDSS = 55V ， RDS （ ON） = 4.9米ヘ， ID = 75A ）晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总13页 (文件大小：809K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 97018

IRF1405ZPbF

IRF1405ZSPbF

AUTOMOTIVE MOSFET

IRF1405ZLPbF

Features

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

V_DSS= 55V

R_DS(on)= 4.9mΩ

I_D= 75A

Description

SpecificallydesignedforAutomotiveapplications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistancepersiliconarea. Additionalfeatures

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

binetomakethisdesignanextremelyefficientand

reliable device for use in Automotive applications

and a wide variety of other applications.

D²Pak

TO-262

TO-220AB

IRF1405ZPbF

IRF1405ZSPbF IRF1405ZLPbF

Absolute Maximum Ratings

Parameter

Max.

150

110

Units

@ T = 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

@ T = 100°C

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 25°C

600

230

@T = 25°C

Power Dissipation

Linear Derating Factor

1.5

± 20

W/°C

Gate-to-Source Voltage

E_{AS (Thermally limited)}

270

420

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

STG

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.65

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

–––

Junction-to-Ambient (PCB Mount, steady state)

HEXFET^®is a registered trademark of International Rectifier.

www.irf.com

07/22/05

IRF1405Z/S/LPbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

55 ––– –––

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

∆V_(BR)DSS/∆T_J

R_DS(on)

Breakdown Voltage Temp. Coefficient ––– 0.049 ––– V/°C Reference to 25°C, I_D= 1mA

mΩ

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

–––

2.0

3.7

–––

4.9

4.0

–––

V_GS= 10V, I_D= 75A

V_DS= V_GS, I_D= 250µA

V_DS= 25V, I_D= 75A

V_GS(th)

gfs

Forward Transconductance

I_DSS

Drain-to-Source Leakage Current

–––

µA V_DS= 55V, V_GS= 0V

250

200

_DS= 55V, V_GS= 0V, T_J= 125°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

nA V_GS= 20V

––– -200

_GS= -20V

I_D= 75A

_DS= 44V

Q_g

Q_gs

Q_gd

t_d(on)

t_r

120

180

–––

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

V_GS= 10V

V_DD= 25V

I_D= 75A

Rise Time

110

t_d(off)

t_f

Turn-Off Delay Time

ns R_G= 4.4Ω

Fall Time

V_GS= 10V

L_D

Internal Drain Inductance

4.5

Between lead,

nH 6mm (0.25in.)

from package

L_S

Internal Source Inductance

–––

7.5

–––

and center of die contact

V_GS= 0V

_DS= 25V

pF ƒ = 1.0MHz

V_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

_GS= 0V, V_DS= 44V, ƒ = 1.0MHz

C_iss

Input Capacitance

––– 4780 –––

C_oss

Output Capacitance

–––

770

410

–––

C_rss

Reverse Transfer Capacitance

Output Capacitance

C_oss

––– 2730 –––

C_oss

Output Capacitance

–––

600

910

–––

C_osseff.

Effective Output Capacitance

V_GS= 0V, V_DS= 0V to 44V

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

Continuous Source Current

–––

(Body Diode)

showing the

integral reverse

Pulsed Source Current

–––

600

(Body Diode)

p-n junction diode.

Diode Forward Voltage

–––

1.3

T = 25°C, I = 75A, V = 0V

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

ns T = 25°C, I = 75A, V_DD= 25V

J F

di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

Limited by T_Jmax, starting T_J= 25°C, L = 0.10mH

ꢀ Limited by T_Jmax, see Fig.12a, 12b, 15, 16 for typical

repetitive avalanche performance.

This value determined from sample failure population.

100% tested to this value in production.

R_G= 25Ω, I_AS= 75A, V_GS=10V. Part not

This is applied to D²Pak, when mounted on 1" square PCB

( FR-4 or G-10 Material ). For recommended footprint and

soldering techniques refer to application note #AN-994.

recommended for use above this value.

Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

C_osseff. is a fixed capacitance that gives the same

charging time as C_osswhile V_DSis rising from 0 to 80%

V_DSS

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IRF1405Z/S/LPbF

1000

100

1000

100

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

TOP

BOTTOM

4.5V

20µs PULSE WIDTH

Tj = 175°C

20µs PULSE WIDTH

Tj = 25°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

100

200

175

150

= 150°C

= 25°C

125

100

= 175°C

= 25°C

= 25V

20µs PULSE WIDTH

25 50 75 100 125 150 175 200

, Gate-to-Source Voltage (V)

I ,Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

vs. Drain Current

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IRF1405Z/S/LPbF

100000

12.0

10.0

8.0

= 0V,

= C

f = 1 MHZ

I = 75A

+ C , C

SHORTED

iss

= C

= 44V

= 28V

rss

oss

= C + C

10000

1000

100

iss

6.0

4.0

oss

rss

2.0

0.0

100

120

Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge vs.

Fig 5. Typical Capacitance vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

1000.00

100.00

10.00

1.00

10000

1000

100

OPERATION IN THIS AREA

LIMITED BY R (on)

= 175°C

100µsec

= 25°C

Tc = 25°C

Tj = 175°C

1msec

= 0V

Single Pulse

10msec

0.10

0.0

0.5

1.0

1.5

2.0

2.5

100

1000

, Source-to-Drain Voltage (V)

, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

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IRF1405Z/S/LPbF

150

125

100

2.5

2.0

1.5

1.0

0.5

= 75A

= 10V

Limited By Package

-60 -40 -20

20 40 60 80 100 120 140 160 180

100

125

150

175

, Case Temperature (°C)

, Junction Temperature (°C)

Fig 10. Normalized On-Resistance

Fig 9. Maximum Drain Current vs.

vs.Temperature

CaseTemperature

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF1405Z/S/LPbF

15V

500

400

300

200

100

TOP

31A

53A

DRIVER

BOTTOM 75A

D.U.T

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

100

125

150

175

Starting T , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Fig 12b. Unclamped Inductive Waveforms

vs. Drain Current

10 V

4.0

3.5

3.0

2.5

2.0

1.5

1.0

Charge

= 250µA

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

D.U.T.

-75 -50 -25

25 50 75 100 125 150 175 200

, Temperature ( °C )

3mA

Current Sampling Resistors

Fig 14. Threshold Voltage vs. Temperature

Fig 13b. Gate Charge Test Circuit

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IRF1405Z/S/LPbF

10000

1000

100

Duty Cycle = Single Pulse

Allowed avalanche Current vs

avalanche pulsewidth, tav

∆

assuming

Tj = 25°C due to

avalanche losses

0.01

0.05

0.10

1.0E-08

1.0E-07

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

300

250

200

150

100

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

TOP

BOTTOM 10% Duty Cycle

= 75A

Single Pulse

4. P_{D (ave)}= Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I_av= Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

T_jmax(assumed as 25°C in Figure 15, 16).

t_{av =}Average time in avalanche.

100

125

150

175

D = Duty cycle in avalanche = t_av·f

Z_thJC(D, t_av) = Transient thermal resistance, see figure 11)

Starting T , Junction Temperature (°C)

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

I_av= 2DT/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_av

Fig 16. Maximum Avalanche Energy

vs.Temperature

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IRF1405Z/S/LPbF

Driver Gate Drive

P.W.

Period

D =

D.U.T

=10V

CircuitLayoutConsiderations

• LowStrayInductance

• Ground Plane

• LowLeakageInductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

Re-Applied

Voltage

• dv/dtcontrolledbyR_G

R_G

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

90%

10%

d(on)

d(off)

Fig 18b. Switching Time Waveforms

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IRF1405Z/S/LPbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

Note: "P" in assembly line

position indicates "Lead-Free"

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IRF1405Z/S/LPbF

D²Pak Package Outline

Dimensions are shown in millimeters (inches)

D²Pak Part Marking Information

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IRF1405Z/S/LPbF

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

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IRF1405Z/S/LPbF

D²Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

11.60 (.457)

11.40 (.449)

1.85 (.073)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

TO-220AB packages are not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 07/05

www.irf.com

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/

IRF1405ZLPBF [INFINEON]

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IRF1405_04