IRF2804S-7P [INFINEON]
AUTOMOTIVE MOSFET; 汽车MOSFET
| 型号： | IRF2804S-7P |
| 厂家： | 
Infineon |
| 描述： | AUTOMOTIVE MOSFET |
| 文件： | 总10页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96891
AUTOMOTIVE MOSFET
IRF2804S-7P
HEXFET® Power MOSFET
Features
l
l
l
l
l
Advanced Process Technology
D
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
VDSS = 40V
G
Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 1.6mΩ
S
Description
ID = 160A
S (Pin 2, 3 ,5,6,7)
G (Pin 1)
SpecificallydesignedforAutomotiveapplications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
Absolute Maximum Ratings
Parameter
Max.
Units
I
I
I
I
@ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
320
A
D
D
D
@ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9)
230
160
@ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
1360
330
DM
P
@TC = 25°C
Maximum Power Dissipation
W
D
Linear Derating Factor
2.2
W/°C
V
V
Gate-to-Source Voltage
± 20
GS
Single Pulse Avalanche Energy (Thermally Limited)
EAS
630
1050
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
E
AS (tested)
IAR
EAR
See Fig.12a,12b,15,16
A
Repetitive Avalanche Energy
Operating Junction and
mJ
°C
T
T
-55 to + 175
J
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.50
–––
62
Units
°C/W
Junction-to-Case
RθJC
RθCS
RθJA
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
Junction-to-Ambient (PCB Mount, steady state)
–––
40
HEXFET® is a registered trademark of International Rectifier.
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1
9/6/04
IRF2804S-7P
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
40 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on) SMD
VGS(th)
V
Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
V
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
1.2
–––
–––
–––
–––
–––
1.6
4.0
–––
20
VGS = 10V, ID = 160A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 160A
gfs
Forward Transconductance
220
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
IDSS
Drain-to-Source Leakage Current
µA
V
DS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
GS = 20V
VGS = -20V
nC ID = 160A
DS = 32V
250
200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
V
––– -200
Qg
Qgs
Qgd
td(on)
tr
170
63
260
–––
–––
–––
–––
–––
–––
–––
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
V
71
VGS = 10V
ns VDD = 20V
ID = 160A
17
Rise Time
150
110
105
4.5
td(off)
tf
Turn-Off Delay Time
R
G = 2.6Ω
Fall Time
VGS = 10V
LD
Internal Drain Inductance
nH Between lead,
D
S
6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Ciss
Input Capacitance
––– 6930 –––
––– 1750 –––
pF VGS = 0V
VDS = 25V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Output Capacitance
–––
970
–––
ƒ = 1.0MHz, See Fig. 5
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
––– 5740 –––
––– 1570 –––
––– 2340 –––
V
Coss
Output Capacitance
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
–––
–––
320
(Body Diode)
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
–––
––– 1360
integral reverse
S
p-n junction diode.
VSD
trr
T = 25°C, I = 160A, V = 0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
43
1.3
65
72
V
J
S
GS
T = 25°C, I = 160A, VDD = 20V
ns
J
F
Qrr
48
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L=0.049mH, RG = 25Ω, IAS = 160A, VGS =10V.
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
R is measured at TJ of approximately 90°C.
θ
80% VDSS
.
2
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IRF2804S-7P
10000
1000
100
10000
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
4.5V
≤ 60µs PULSE WIDTH
Tj = 175°C
10
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
240
T
= 25°C
J
200
160
120
80
100.0
10.0
1.0
T
= 175°C
J
T
= 175°C
J
T
= 25°C
J
V
= 20V
DS
≤ 60µs PULSE WIDTH
40
V
= 10V
DS
380µs PULSE WIDTH
0.1
0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
20
40
60
80
100 120 140
V
, Gate-to-Source Voltage (V)
GS
I
Drain-to-Source Current (A)
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
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3
IRF2804S-7P
14000
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I
= 160A
D
V
= 32V
= C + C , C SHORTED
DS
VDS= 20V
iss
gs
gd ds
12000
10000
8000
6000
4000
2000
0
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
Coss
Crss
4
0
0
50
Q
100
150
200
250
300
1
10
100
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100.0
10.0
1.0
100µsec
1msec
T
J
= 25°C
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
DC
V
= 0V
GS
0.1
0.1
0.0
0.4
V
0.8
1.2
1.6
2.0
2.4
0
1
10
100
1000
V
, Drain-toSource Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF2804S-7P
350
300
250
200
150
100
50
2.0
1.5
1.0
0.5
I
= 160A
= 10V
LIMITED BY PACKAGE
D
V
GS
0
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
T
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs. Temperature
Case Temperature
1
D = 0.50
0.1
0.20
0.10
R1
R1
R2
R2
0.05
Ri (°C/W) τi (sec)
0.1951 0.000743
τ
0.01
0.001
J τJ
τ
τ
0.02
0.01
Cτ
1τ1
Ci= τi/Ri
τ
2τ2
0.3050 0.008219
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF2804S-7P
2500
2000
1500
1000
500
15V
I
D
TOP
21A
33A
160A
BOTTOM
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
0
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
I
vs. Drain Current
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
Q
GD
GS
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
I
I
I
= 1.0A
D
D
D
= 1.0mA
= 250µA
L
VCC
DUT
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
0
1K
T
J
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRF2804S-7P
10000
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
800
600
400
200
0
TOP
BOTTOM 1% Duty Cycle
= 160A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
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7
IRF2804S-7P
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRF2804S-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
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9
IRF2804S-7P
D2Pak - 7 Pin Tape and Reel
IRF2804STRL-7P
IRF2804STRL-7P
IRF2804STRL-7P
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101]market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/04
10
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