IRF2805 [INFINEON]
AUTOMOTIVE MOSFET; 汽车MOSFET
| 型号： | IRF2805 |
| 厂家： | 
Infineon |
| 描述： | AUTOMOTIVE MOSFET |
| 文件： | 总9页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94428
IRF2805
AUTOMOTIVE MOSFET
HEXFET® Power MOSFET
Typical Applications
D
l
Climate Control, ABS, Electronic Braking,
VDSS = 55V
Windshield Wipers
Features
R
DS(on) = 4.7mΩ
G
l
l
l
l
l
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
ID = 75A
S
Description
SpecificallydesignedforAutomotiveapplications, thisHEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely
lowon-resistancepersiliconarea. Additionalfeaturesofthisdesign are
a 175°C junction operating temperature, fast switching speed and im-
provedrepetitiveavalancherating.Thesefeaturescombinetomakethis
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current
175
120
75
A
700
330
2.2
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
VGS
Gate-to-Source Voltage
± 20
450
1220
EAS
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
EAS (6 sigma)
IAR
See Fig.12a, 12b, 15, 16
A
EAR
TJ
Repetitive Avalanche Energy
Operating Junction and
mJ
-55 to + 175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case )
1.1 (10)
N•m (lbf•in)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.45
–––
62
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
8/8/02
IRF2805
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance –––
3.9 4.7
––– 4.0
––– –––
mΩ VGS = 10V, ID = 104A
Gate Threshold Voltage
2.0
91
V
S
VDS = 10V, ID = 250µA
VDS = 25V, ID = 104A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 20V
Forward Transconductance
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 150 230
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 104A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
38
52
57
78
nC VDS = 44V
VGS = 10V
VDD = 28V
14 –––
––– 120 –––
––– 68 –––
––– 110 –––
ID = 104A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 2.5Ω
VGS = 10V
D
Between lead,
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
6mm (0.25in.)
nH
G
from package
7.5
and center of die contact
S
Ciss
Input Capacitance
––– 5110 –––
––– 1190 –––
––– 210 –––
––– 6470 –––
––– 860 –––
––– 1600 –––
VGS = 0V
Coss
Output Capacitance
pF VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
Coss
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
175
700
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 80 120
––– 290 430
V
TJ = 25°C, IS = 104A, VGS = 0V
ns
TJ = 25°C, IF = 104A
Qrr
nC di/dt = 100A/µs
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.08mH
RG = 25Ω, IAS = 104A. (See Figure 12).
ISD ≤ 104A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
as Coss while VDS is rising from 0 to 80% VDSS
.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
,
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF2805
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
200
160
T
= 25°C
J
T
= 175°C
J
T
= 175°C
J
120
80
40
0
100
T
= 25°C
J
V
= 25V
V
= 25V
DS
20µs PULSE WIDTH
DS
20µs PULSE WIDTH
10
4.0
5.0
V
6.0
7.0
8.0
9.0
10.0
0
40
80
120
160
200
, Gate-to-Source Voltage (V)
I
Drain-to-Source Current (A)
GS
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. DrainCurrent
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3
IRF2805
10000
8000
6000
4000
2000
20
16
12
8
V
= 0V,
= C
f = 1 MHZ
+ C C
GS
V
= 44V
I = 104A
D
DS
VDS= 28V
C
,
iss
gs
gd
ds
SHORTED
C
= C
rss
gd
C
= C + C
oss
ds gd
Ciss
4
Coss
Crss
0
0
1
0
40
Q
80
120
160
200
240
10
100
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
100.0
10.0
1.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
Tc = 25°C
10msec
Tj = 175°C
Single Pulse
V
= 0V
GS
1
0.1
1
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-toDrain Voltage (V)
V
, Drain-toSource Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF2805
3.0
2.5
2.0
1.5
1.0
0.5
0.0
180
150
120
90
175A
=
I
D
LIMITED BY PACKAGE
60
30
V
= 10V
GS
0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
25
50
75
100
125
150
175
T , Junction Temperature
(
C)
°
, Case Temperature ( C)
T
J
C
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current Vs.
Vs.Temperature
Case Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.001
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF2805
1000
800
600
400
200
0
I
15V
D
TOP
43A
87A
BOTTOM
104A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
°
( C)
150
175
Starting Tj, Junction Temperature
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
V
G
I
= 250µA
D
3.0
2.0
1.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
V
GS
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
3mA
T
J
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRF2805
10000
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
∆
0.01
0.05
0.10
1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
500
400
300
200
100
0
TOP
BOTTOM 10% Duty Cycle
= 104A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Vs. Temperature
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7
IRF2805
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
+
-
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRF2805
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
PART NUMB
DATE CODE
ER
INTER
NATIONAL
RECTIFI
ER
LOT C
ODE 1789
ASSEMBLED ON WW 19, 199
7
LOGO
IN THE ASSEM
BLY LINE "C"
YEAR 7 = 1997
WEEK 19
ASSEMBLY
LOT CODE
LINE C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 8/02
www.irf.com
9
相关型号：
IRF2805STRRPBF
Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
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