IRF2804S [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF2804S |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总12页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94436C
IRF2804
AUTOMOTIVE MOSFET
IRF2804S
IRF2804L
HEXFET® Power MOSFET
Features
l
l
l
l
l
Advanced Process Technology
D
VDSS = 40V
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
RDS(on) = 2.0mΩ
G
Repetitive Avalanche Allowed up to Tjmax
ID = 75A
S
Description
SpecificallydesignedforAutomotiveapplications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistancepersiliconarea. Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitiveavalancherating. Thesefeaturescom-
bine to make this design an extremely efficient
andreliabledeviceforuseinAutomotiveapplica-
tions and a wide variety of other applications.
D2Pak
IRF2804S
TO-262
IRF2804L
TO-220AB
IRF2804
Absolute Maximum Ratings
Parameter
Max.
280
200
75
Units
I
I
I
I
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
D
D
D
(Package Limited)
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
1080
330
DM
P
@TC = 25°C
Maximum Power Dissipation
W
D
Linear Derating Factor
Gate-to-Source Voltage
2.2
W/°C
V
V
± 20
GS
EAS
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
670
1160
mJ
E
AS (tested)
Avalanche Current
IAR
EAR
See Fig.12a,12b,15,16
A
Repetitive Avalanche Energy
mJ
°C
T
J
Operating Junction and
-55 to + 175
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.45
–––
62
Units
Rθ
Rθ
Rθ
Rθ
Junction-to-Case
°C/W
JC
CS
JA
JA
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
08/27/03
IRF2804/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
40 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆Β
V
∆
VDSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.031 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) SMD
RDS(on) TO-220
VGS(th)
Static Drain-to-Source On-Resistance
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
–––
2.0
1.5
1.8
–––
–––
–––
–––
–––
–––
160
41
2.0
2.3
VGS = 10V, ID = 75A
VGS = 10V, ID = 75A
mΩ
4.0
V
S
VDS = VGS, ID = 250µA
VDS = 10V, ID = 75A
gfs
Forward Transconductance
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
IDSS
Drain-to-Source Leakage Current
µA VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
250
200
-200
240
62
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
nC ID = 75A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
VDS = 32V
66
99
VGS = 10V
13
–––
–––
–––
–––
–––
ns
VDD = 20V
Rise Time
120
130
130
4.5
ID = 75A
td(off)
tf
Ω
RG = 2.5
Turn-Off Delay Time
Fall Time
VGS = 10V
LD
D
Internal Drain Inductance
nH Between lead,
6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
S
and center of die contact
Ciss
Input Capacitance
––– 6450 –––
––– 1690 –––
pF VGS = 0V
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
–––
840
–––
ƒ = 1.0MHz, See Fig. 5
Coss
––– 5350 –––
––– 1520 –––
––– 2210 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
D
Continuous Source Current
–––
–––
280
MOSFET symbol
(Body Diode)
Pulsed Source Current
A
V
showing the
integral reverse
G
ISM
–––
––– 1080
S
(Body Diode)
p-n junction diode.
VSD
T = 25°C, I = 75A, V = 0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
1.3
J
S
GS
trr
Qrr
T = 25°C, I = 75A, VDD = 20V
J F
di/dt = 100A/µs
–––
–––
56
67
84
100
ns
nC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
L=0.24mH, RG = 25Ω, IAS = 75A, VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Max RDS(on) for D2Pak and TO-262 (SMD) devices.
Part not recommended for use above this value.
ISD ≤ 75A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C.
,
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
ꢀ Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80%
VDSS
.
2
www.irf.com
IRF2804/S/L
10000
1000
100
10
10000
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
TOP
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 4.5V
5.0V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
4.5V
20µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
300
250
200
150
100
50
T
J
= 25°C
J
T
= 175°C
J
T
= 175°C
T
= 25°C
J
V
= 10V
V
= 10V
DS
20µs PULSE WIDTH
DS
20µs PULSE WIDTH
1
0
4.0
5.0
6.0
7.0
8.0
9.0
0
40
80
120
160
200
V
, Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
www.irf.com
3
IRF2804/S/L
20
16
12
8
12000
V
= 0V,
f = 1 MHZ
I = 75A
D
GS
C
= C + C , C SHORTED
iss
gs
= C
gd
ds
V
= 32V
DS
C
10000
8000
6000
4000
2000
rss
gd
VDS= 20V
VDS= 8.0V
C
= C + C
oss
ds gd
Ciss
4
Coss
Crss
0
0
0
40
80
120
160
200
240
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10000
1000
100
10
1000.0
100.0
10.0
1.0
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
1.0
Tc = 25°C
Tj = 175°C
Single Pulse
J
10msec
V
= 0V
GS
1
0.1
0
1
10
100
1000
0.2
0.6
SD
1.4
1.8
2.2
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRF2804/S/L
2.0
1.5
1.0
0.5
300
250
200
150
100
50
I
= 75A
D
LIMITED BY PACKAGE
V
= 10V
GS
0
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF2804/S/L
15V
1600
1200
800
400
0
ID
TOP
31A
53A
DRIVER
+
L
BOTTOM 75A
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.0
2.0
1.0
V
G
I
= 250µA
D
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
V
GS
T
J
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRF2804/S/L
10000
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
∆
0.01
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.05
0.10
1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
800
600
400
200
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10% Duty Cycle
= 75A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
25
50
75
100
125
150
D = Duty cycle in avalanche = tav ·f
Starting T , Junction Temperature (°C)
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
www.irf.com
7
IRF2804/S/L
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
+
-
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
www.irf.com
IRF2804/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
A
INTERNATIONAL
PART NUMBER
LOT CODE 9B1M
RECTIFIER
IRF1010
9246
LOGO
9B 1M
DATE CODE
(YYWW)
ASSEMBLY
LOT CODE
YY = YEAR
WW = WEEK
www.irf.com
9
IRF2804/S/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WEE K 02
AS S E MBL Y
LOT CODE
LINE L
10
www.irf.com
IRF2804/S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
EXA
MPLE:
THIS
IS AN IRL3103L
LOT CODE 178
PART NUMBER
9
INTERNATIONAL
RECTIFI
ASSEMBLED ON WW19, 1
997
IN THE ASSEMBLY LINE "C"
ER
LOGO
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMB
LY
LOT CODE
L
INE C
www.irf.com
11
IRF2804/S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/03
12
www.irf.com
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