IRF3315PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF3315PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94825
IRF3315PbF
HEXFET® Power MOSFET
ꢃ Advanced Process Technology
ꢃ Dynamic dv/dt Rating
ꢃ 175°C Operating Temperature
ꢃ Fast Switching
D
VDSS = 150V
ꢃ Fully Avalanche Rated
ꢃ Lead-Free
RDS(on) = 0.082Ω
G
Description
ID = 21A
S
Fifth Generation HEXFETs from InternationalRectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrialapplicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
21
15
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ꢀ
A
84
PD @TC = 25°C
Power Dissipation
94
W
W/°C
V
Linear Derating Factor
0.63
± 20
350
12
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢁ
Avalanche Currentꢀ
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energyꢀ
Peak Diode Recovery dv/dt ꢂ
Operating Junction and
9.4
2.5
mJ
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
Units
RθJC
RθCS
RθJA
1.6
–––
62
°C/W
11/10/03
IRF3315PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
150 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.187 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.082
Ω
V
S
VGS = 10V, ID = 12A ꢄ
VDS = VGS, ID = 250µA
VDS = 50V, ID = 12A
Gate Threshold Voltage
2.0
17
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 95
––– ––– 11
––– ––– 47
V
DS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 125°C
VGS = 20V
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
ID = 12A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = 120V
VGS = 10V, See Fig. 6 and 13 ꢄ
–––
–––
–––
–––
9.6 –––
32 –––
49 –––
38 –––
VDD = 75V
RiseTime
ID = 12A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 5.1Ω
RD = 5.9Ω, See Fig. 10 ꢄ
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
S
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
pF
G
7.5
Ciss
Coss
Crss
Input Capacitance
––– 1300 –––
––– 300 –––
––– 160 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
21
84
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode) ꢀ
integral reverse
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 174 260
––– 1.2 1.7
V
TJ = 25°C, IS = 12A, VGS = 0V ꢁ
ns
TJ = 25°C, IF = 12A
Qrr
ton
µC di/dt = 100A/µs ꢁ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ꢀ Repetitive rating; pulse width limited by
ꢁ ISD ≤ 12A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS
,
max. junction temperature. ( See fig. 11 )
TJ ≤ 175°C
ꢂ Starting TJ = 25°C, L = 4.9mH
ꢃ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 12A. (See Figure 12)
IRF3315PbF
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 175 C
J
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
21A
=
I
D
°
T = 25 C
J
°
T = 175 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
4
5
6
7
8
9
10
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF3315PbF
20
16
12
8
3000
I
D
= 12A
V
= 0V,
f = 1MHz
gd , ds
GS
V
= 120V
= 75V
= 30V
DS
C
= C + C
C
SHORTED
iss
gs
V
V
DS
C
= C
gd
rss
2500
2000
1500
1000
500
DS
C
= C + C
ds
oss
gd
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 25 C
J
10us
°
T = 175 C
J
100us
1ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
10ms
V
= 0 V
GS
1
0.1
0.2
1
10
100
1000
0.5
0.8
1.1
1.4
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRF3315PbF
RD
25
20
15
10
5
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRF3315PbF
1000
800
600
400
200
0
I
D
TOP
4.9A
8.5A
15V
BOTTOM 12A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
Fig 12c. Maximum Avalanche Energy
t
p
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRF3315PbF
Peak Diode Recovery dv/dt Test Circuit
+
ꢀ
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
ꢂ
-
ꢁ
-
+
ꢃ
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRF3315PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMBLY
LOT CODE
LINE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
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