IRF3415HR [INFINEON]

Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3;


型号：	IRF3415HR
厂家：	Infineon
描述：	Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总8页 (文件大小：96K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 91477D

IRF3415

HEXFET^®Power MOSFET

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= 150V

R_DS(on)= 0.042Ω

l Fully Avalanche Rated

Description

I_D= 43A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

150

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.3

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

590

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.75

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

5/13/98

IRF3415

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

150 ––– –––

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, I_D= 1mA

R_DS(on)

V_GS(th)

g_fs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

––– ––– 0.042

Ω

V_GS= 10V, I_D= 22A

V_DS= V_GS, I_D= 250µA

V_DS= 50V, I_D= 22A

V_DS= 150V, V_GS= 0V

V_DS= 120V, V_GS= 0V, T_J= 150°C

V_GS= 20V

2.0

––– 4.0

––– –––

Forward Transconductance

––– ––– 25

––– ––– 250

––– ––– 100

––– ––– -100

––– ––– 200

––– ––– 17

––– ––– 98

I_DSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

I_GSS

V_GS= -20V

Q_g

I_D= 22A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= 120V

V_GS= 10V, See Fig. 6 and 13

–––

12 –––

55 –––

71 –––

69 –––

V_DD= 75V

I_D= 22A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 2.5Ω

R_D= 3.3Ω, See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

V_GS= 0V

4.5

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

–––

7.5

C_iss

C_oss

C_rss

Input Capacitance

––– 2400 –––

––– 640 –––

––– 340 –––

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

I_S

––– –––

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

––– ––– 150

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

––– ––– 1.3

––– 260 390

––– 2.2 3.3

T_J= 25°C, I_S= 22A, V_GS= 0V

T_J= 25°C, I_F= 22A

Q_rr

µC di/dt = 100A/µs

Notes:

Repetitive rating; pulse width limited by

I_SD≤ 22A, di/dt ≤ 820A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C

max. junction temperature. ( See fig. 11 )

V_DD= 25V, starting T_J= 25°C, L = 2.4mH

R_G= 25Ω, I_AS= 22A. (See Figure 12)

Pulse width ≤ 300µs; duty cycle ≤ 2%.

IRF3415

1000

100

1000

100

VGS

15V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

TOP

10V

8.0V

7.0V

6.0V

5.5V

5.0V

5.5V

5.0V

BOTTOM 4.5V

4.5V

20us PULSE WIDTH

T = 25 ^oC

T = 175 ^oC

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

3.0

37A

2.5

2.0

1.5

1.0

0.5

0.0

T = 25 C

100

T = 175 C

= 50V

20µs PULSE WIDTH

= 10V

-60 -40 -20

20 40 60 80 100 120 140 160 180

T , Junction Temperature ( ^oC)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF3415

6000

= 0V,

f = 1MHz

= 22A

= C + C

SHORTED

= 120V

= 75V

= 30V

iss

gd ,

= C

rss

5000

4000

3000

2000

1000

= C + C

oss

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

120 160

200

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

100

10us

100us

1ms

T = 175^oC

T = 25^oC

= 25^oC

10ms

= 175^oC

= 0 V

Single Pulse

0.1

0.2

100

1000

0.6

1.0

1.4

1.8

, Drain-to-Source Voltage (V)

,Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

IRF3415

R_D

V_DS

V_GS

10V

D.U.T.

R_G

⁺V_DD

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

175

, Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

1 2

2. Peak T = P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF3415

1400

1200

1000

800

600

400

200

TOP

9.0A

16A

22A

1 5V

BOTTOM

DRIVER

D.U.T

D D

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

175

Starting T , Junction Temperature (^oC)

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

10 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

IRF3415

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

Driver Gate Drive

P.W.

Period

D =

=10V

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

IRF3415

Package Outline

TO-220AB Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

10.29 (.405)

- B

3.78 (.149)

3.54 (.139)

2.87 (.113)

2.62 (.103)

4.69 (.185)

4.20 (.165)

1.32 (.052)

1.22 (.048)

- A

6.47 (.255)

6.10 (.240)

15.24 (.600)

14.84 (.584)

1.15 (.045)

M IN

LEAD ASSIG NM ENTS

- GATE

- DRAIN

- SOU RC E

- DRAIN

14.09 (.555)

13.47 (.530)

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.55 (.022)

0.46 (.018)

1.40 (.055)

1.15 (.045)

0.36 (.014)

2.92 (.115)

2.64 (.104)

2.54 (.100)

N OTES:

D IM ENSIONING

TOLERANCING PER ANSI Y14.5M , 1982.

OUTLINE CONFORM S TO JEDEC OUTLINE TO-220AB.

HEATSINK LEAD M EASUREM ENTS DO NOT INCLU DE BURRS.

C ONTROLLING DIM ENSION : INCH

Part Marking Information

TO-220AB

EXAMPLE : THIS IS AN IR F1010

EXAM PLE : TH IS IS AN IRF1010

W ITH ASSEM BLY

LOT C ODE 9B1M

LOT CO DE 9B1M

INTERNATIONAL

INTERN ATION AL

PART NU M BER

RECTIFIER

R EC TIFIER

IR F1010

IRF1010

LOGO

9246

D ATE COD E

ASSEMBLY

(YYW W )

LOT

CO DE

L OT COD E

YEAR

= YEAR

W W

= W EEK

W W W EEK

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http://www.irf.com/

Data and specifications subject to change without notice.

5/98

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