IRF3415L [INFINEON]
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A); 功率MOSFET （ VDSS = 150V ， RDS（ON） = 0.042ohm ，ID = 43A ）
| 型号： | IRF3415L |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) |
| 文件： | 总10页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91509C
IRF3415S/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF3415S)
l Low-profile through-hole (IRF3415L)
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 150V
RDS(on) = 0.042Ω
G
l Fully Avalanche Rated
ID = 43A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3415L) is available for low-
profileapplications.
2
T O -262
D
Pak
Absolute Maximum Ratings
Parameter
Max.
43
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
30
A
150
3.8
200
1.3
± 20
590
22
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
20
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
Max.
0.75
Units
RθJC
RθJA
°C/W
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
5/13/98
IRF3415S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
150 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, ID = 1mAꢀ
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.042
Ω
V
S
VGS = 10V, ID = 22A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 22Aꢀ
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0
19
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 200
––– ––– 17
––– ––– 98
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 22A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC
ns
VDS = 120V
VGS = 10V, See Fig. 6 and 13 ꢀ
VDD = 75V
–––
–––
–––
–––
12 –––
55 –––
71 –––
69 –––
RiseTime
ID = 22A
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 2.5Ω
RD = 3.3Ω, See Fig. 10 ꢀ
Between lead,
LS
Internal Source Inductance
nH
pF
–––
–––
7.5
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2400 –––
––– 640 –––
––– 340 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFETsymbol
showing the
43
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode) ꢀ
integral reverse
p-n junction diode.
––– ––– 150
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 260 390
––– 2.2 3.3
V
TJ = 25°C, IS = 22A, VGS = 0V
ns
TJ = 25°C, IF = 22A
Qrr
ton
µC di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRF3415 data and test conditions
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 2.4mH
RG = 25Ω, IAS = 22A. (See Figure 12)
ISD ≤ 22A, di/dt ≤ 820A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
IRF3415S/L
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
8.0V
7.0V
6.0V
5.5V
5.5V
BOTTOM 4
5.0V
5.0V
BOTTOM 4.5
4.5V
4.5V
10
20us PULSE WIDTH
20us PULSE WIDTH
T = 175 oC
J
T = 25 oC
J
1
10
100
1
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
37A
=
I
D
°
T = 25 C
J
100
°
T = 175 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
10
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
4
5
6
7
8
9
10
T , Junction Temperature ( oC)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRF3415S/L
20
16
12
8
6000
V
C
= 0V,
f = 1MHz
C
I
D
= 22A
GS
= C + C
SHORTED
ds
V
V
V
= 120V
= 75V
= 30V
iss
gs
gd ,
gd
DS
DS
DS
C
= C
gd
rss
5000
4000
3000
2000
1000
0
C
= C + C
ds
oss
C
iss
C
oss
rss
C
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120 160
200
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
10us
T = 175oC
J
100us
T = 25oC
J
1ms
T
= 25o C
10ms
C
T
= 175o C
J
V
= 0 V
GS
Single Pulse
0.1
0.2
1
0.6
1.0
1.4
1.8
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
IRF3415S/L
RD
50
40
30
20
10
0
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
t
1
0.02
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
IRF3415S/L
1400
1200
1000
800
600
400
200
0
I
D
TOP
9.0A
16A
BOTTOM 22A
1 5V
DRIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
Starting T , Junction Temperature ( oC)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
10 V
+
V
Q
Q
GD
DS
GS
D.U.T.
-
V
GS
V
G
3mA
Charge
I
I
D
G
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRF3415S/L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig14. ForN-ChannelHEXFETS
IRF3415S/L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
M AX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
M INIMUM RECOM MENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIM ENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIM ENSIONING & TOLERANCING PER ANSI Y14.5M , 1982.
CONTROLLING DIM ENSION : INCH.
HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
Part Marking Information
D2Pak
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUM BER
F530S
9246
1M
DATE CODE
(YYW W )
9B
ASSEM BLY
YY
=
YEAR
= W EEK
LOT CODE
W W
IRF3415S/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
IRF3415S/L
Tape & Reel Information
D2Pak
TRR
1 .6 0 (.063 )
1 .5 0 (.059 )
1.60 (.06 3)
1.50 (.05 9)
4.10 (.16 1)
3.90 (.15 3)
0.3 68 (.0145)
0.3 42 (.0135)
FEED DIRECTION
1.85 (.07 3)
11.60 (.457)
11.40 (.449)
1.65 (.06 5)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.42 9)
10.70 (.42 1)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M A X.
60.00 (2.362)
MIN .
30.40 (1.197)
M AX.
NO TES :
1. CO M FO RM S TO EIA-418.
2. CO N TR O LLIN G D IM ENSIO N : M ILLIM ET ER .
3. DIM ENSIO N MEASUR ED
26.40 (1.039)
24.40 (.961)
4
@ HU B.
3
4. INC LUD ES FLAN G E D ISTO R TIO N
@
O UTER EDG E.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
5/98
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