IRF3708 [INFINEON]
Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A); 功率MOSFET （ VDSS = 30V ， RDS（ON）最大值= 12mohm ，ID = 62A ）
| 型号： | IRF3708 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) |
| 文件： | 总10页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93938B
IRF3708
IRF3708S
IRF3708L
SMPS MOSFET
Applications
HEXFET® Power MOSFET
l High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
VDSS
30V
RDS(on) max
ID
12mΩ
62A
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
D2Pak
IRF3708S
TO-262
IRF3708L
l Fully Characterized Avalanche Voltage
TO-220AB
IRF3708
and Current
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-to-Source Voltage
±12
V
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
62
52
A
248
PD @TC = 25°C
PD @TC = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
87
61
W
W
0.58
W/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 175
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
1.73
–––
62
Units
RθJC
RθCS
RθJA
RθJA
–––
0.50
–––
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Junction-to-Ambient (PCB mount)*
40
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes through are on page 10
www.irf.com
1
8/22/00
IRF3708/3708S/3708L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
Static Drain-to-Source On-Resistance –––
8
12.0
VGS = 10V, ID = 15A
RDS(on)
9.5
13.5 mΩ VGS = 4.5V, ID = 12A
–––
0.6
14.5
–––
–––
–––
–––
–––
29
2.0
VGS = 2.8V, ID = 7.5A
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS(th)
IDSS
Gate Threshold Voltage
V
–––
–––
–––
–––
20
µA
Drain-to-Source Leakage Current
100
200
-200
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
IGSS
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
49
––– –––
24 –––
6.7 –––
5.8 –––
S
VDS = 15V, ID = 50A
ID = 24.8A
Qg
–––
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
nC VDS = 15V
VGS = 4.5V
14
21
VGS = 0V, ID = 24.8A, VDS = 15V
VDD = 15V
7.2 –––
50 –––
ID = 24.8A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 17.6 –––
––– 3.7 –––
RG = 0.6Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2417 –––
––– 707 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V
–––
52 –––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
213
62
Units
mJ
A
IAR
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
––– –––
––– –––
62
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
248
S
––– 0.88 1.3
––– 0.80 –––
V
TJ = 25°C, IS = 31A, VGS = 0V
TJ = 125°C, IS = 31A, VGS = 0V
TJ = 25°C, IF = 31A, VR=20V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 41
––– 64
––– 43
62
96
65
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 31A, VR=20V
nC di/dt = 100A/µs
Qrr
––– 70 105
2
www.irf.com
IRF3708/3708S/3708L
1000
100
10
1000
VGS
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
VGS
TOP
TOP
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
100
10
1
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
1000
100
10
62A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 175 C
J
V
= 15V
20µs PULSE WIDTH
DS
V
GS
= 10V
2.0
3.0
4.0
5.0
6.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
www.irf.com
3
IRF3708/3708S/3708L
3500
10
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 24.8A
GS
V
= 15V
C
= C + C
DS
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
gd
2800
2100
1400
700
0
oss
ds
C
iss
6
4
C
oss
rss
2
C
0
1
10
100
0
10
20
30
40
50
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
10us
T = 175 C
J
°
T = 25 C
J
100us
1ms
1
10ms
°
= 25 C
T
C
°
T
= 175 C
J
V
= 0 V
Single Pulse
GS
0.1
0.2
1
0.1
0.8
1.4
2.0
2.6
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
www.irf.com
IRF3708/3708S/3708L
RD
70
60
50
40
30
20
10
0
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF3708/3708S/3708L
0.025
0.017
0.015
0.013
0.011
0.009
0.007
0.020
0.015
VGS = 4.5V
I
= 31A
0.010
D
VGS = 10V
0.005
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0 10.0
0
50
100
150
200
250
300
V
Gate -to -Source Voltage (V)
I
, Drain Current ( A )
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
V
600
DS
D.U.T.
-
V
I
G
D
10A
V
GS
TOP
3mA
Charge
20.7A
BOTTOM 24.8A
480
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Gate Charge Test Circuit
360
240
120
0
and Waveform
15V
V
(B R )D S S
DRIVER
L
t
p
V
DS
D.U.T
R
+
G
V
DD
-
25
50
75
100
125
150
175
I
AS
20 V
°
Starting T , Junction Temperature ( C)
J
0.01
t
Ω
p
I
A S
Fig 15a&b. Unclamped Inductive Test circuit
Fig 15c. Maximum Avalanche Energy
and Waveforms
Vs. Drain Current
6
www.irf.com
IRF3708/3708S/3708L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
-
B
-
3.7 8 (.14 9)
3.5 4 (.13 9)
2.87 (.1 13)
2.62 (.1 03)
4.69 (.1 85)
4.20 (.1 65)
1 .32 (.05 2)
1 .22 (.04 8)
- A
-
6.47 (.255 )
6.10 (.240 )
4
15.24 (.600 )
14.84 (.584 )
1.15 (.045)
M IN
LE A D A S S IG N M E N T S
1
2
3
4
- G A T E
1
2
3
- D R A IN
- S O U R C E
- D R A IN
1 4.09 (.5 55)
1 3.47 (.5 30)
4 .06 (.16 0)
3 .55 (.14 0)
0 .93 (.03 7)
0 .69 (.02 7)
0.5 5 (.0 22)
0.4 6 (.0 18)
3X
3X
1 .4 0 (.05 5)
3 X
1 .1 5 (.04 5)
0.36 (.0 14)
M
B
A
M
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.100)
2X
N O TE S :
1
2
D IME N S IO N IN G
&
TO LE R A N C IN G P E R A N S I Y 14.5M , 19 82.
3
4
O U TLIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B .
C O N TR O LLIN G D IM E N S IO N : IN C H
H E A T S IN K
&
LE A D M E A S U R E M E N T S D O N O T IN C LU D E B U R R S .
TO-220AB Part Marking Information
E XAM PL E : TH IS IS A N IR F 1010
W ITH AS SE M BLY
A
INTE R N AT ION AL
R E C TIFIE R
PA R T N U M BE R
LO T C O D E 9B 1M
IR F 1010
9246
LO G O
9B
1M
D ATE C O D E
(YYW W )
A S SE M B LY
LOT
C O D E
YY
=
YEA R
= W EE K
W W
www.irf.com
7
IRF3708/3708S/3708L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
MAX.
- A -
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIMENSIONS AFTER SO LDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
D2Pak Part Marking Information
A
INTERNATIONAL
RECTIFIER
PART NUMBER
F530S
LOGO
9246
1M
DATE CODE
(YYW W )
9B
ASSEMBLY
YY
=
YEAR
= W EEK
LOT CODE
W W
8
www.irf.com
IRF3708/3708S/3708L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
www.irf.com
9
IRF3708/3708S/3708L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR R
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
F E ED D IRE C TIO N
TR L
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
F E ED D IR E CT IO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX.
60.00 (2.362)
M IN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIM ENSION: MILLIM ETER.
3. DIM ENSION MEASURED
26.40 (1.039)
24.40 (.961)
4
@ HUB.
3
4. INCLUDES FLANGE DISTORTION
@
OUTER EDGE.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
This is only applied to TO-220AB package
Starting TJ = 25°C, L = 0.7 mH
RG = 25Ω, IAS = 24.8 A.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 8/00
10
www.irf.com
相关型号：
IRF3708STRL
Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
INFINEON
IRF3708STRLPBF
Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRF3708STRR
Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明