IRF3709SPBF [INFINEON]
SMPS MOSFET; 开关电源MOSFET
| 型号： | IRF3709SPBF |
| 厂家： | 
Infineon |
| 描述： | SMPS MOSFET |
| 文件： | 总11页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95495
IRF3709PbF
IRF3709SPbF
IRF3709LPBF
SMPS MOSFET
Applications
HEXFET® Power MOSFET
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
VDSS
30V
RDS(on) max
ID
90A
9.0mΩ
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
D2Pak
IRF3709S
TO-262
IRF3709L
TO-220AB
IRF3709
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
VDS
Parameter
Drain-Source Voltage
Max.
30
Units
V
VGS
Gate-to-Source Voltage
± 20
V
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
90
57
A
360
PD @TC = 25°C
PD @TA = 25°C
Maximum Power Dissipation
Maximum Power Dissipationꢀ
Linear Derating Factor
120
W
W
3.1
0.96
mW/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
1.04
–––
62
Units
RθJC
RθCS
RθJA
RθJA
–––
0.50
–––
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)ꢀ
°C/W
40
Notes through are on page 11
www.irf.com
1
07/01/04
IRF3709/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
1.0
6.4
9.0
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
mΩ
V
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
7.4 10.5
––– 3.0
––– ––– 20
––– ––– 100
––– ––– 200
––– ––– -200
VDS = 24V, VGS = 0V
µA
Drain-to-Source Leakage Current
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 16V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
V
GS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
53
––– –––
27 41
S
VDS = 15V, ID = 30A
ID = 15A
Qg
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
6.7 –––
9.7 –––
22 –––
11 –––
nC VDS = 16V
VGS = 5.0V
VGS = 0V, VDS = 10V
VDD = 15V
––– 171 –––
ID = 30A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
21 –––
9.2 –––
RG = 1.8Ω
VGS = 4.5V
Ciss
Coss
Crss
Input Capacitance
––– 2672 –––
––– 1064 –––
––– 109 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
VDS = 16V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
382
30
Units
mJ
IAR
Avalanche Current
–––
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
––– –––
––– –––
90
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
360
S
––– 0.88 1.3
––– 0.82 –––
V
TJ = 25°C, IS = 30A, VGS = 0V
TJ = 125°C, IS = 30A, VGS = 0V
TJ = 25°C, IF = 30A, VR=15V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 48
––– 46
––– 48
––– 52
72
69
72
78
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 30A, VR=15V
nC di/dt = 100A/µs
Qrr
2
www.irf.com
IRF3709/S/LPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM2.7V
BOTTOM2.7V
2.7V
2.7V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
90A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
100
V
= 15V
DS
20µs PULSE WIDTH
V
=10V
GS
10
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.0
4.0
5.0 6.0
7.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF3709/S/LPbF
6
5
4
3
2
1
0
4000
I = 30A
D
V
= 0V,
f = 1MHz
gd , ds
V
V
V
= 24V
= 15V
= 6V
GS
DS
DS
DS
C
= C + C
gs
C
SHORTED
iss
C
= C
gd
rss
C
= C + C
ds
oss
gd
3000
2000
1000
0
C
iss
C
oss
C
rss
1
10
100
0
5
10
15
20
25
30
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10us
100us
°
T = 25 C
1ms
J
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
0.1
0.2
1
10
100
0.8
1.4
2.0
2.6
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRF3709/S/LPbF
RD
100
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
2
DM
0.10
0.05
0.1
t
1
t
0.02
0.01
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF3709/S/LPbF
1200
1000
800
600
400
200
0
I
15V
D
TOP
13A
19A
BOTTOM 30A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
IRF3709/S/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRF3709/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMP LE : TH IS IS AN IRF1 0 1 0
LO T C O D E 1 7 8 9
P ART N U MBER
AS S EMBLE D O N WW 1 9 , 1 9 9 7
IN TH E AS S EMBLY LINE "C "
IN T ERN AT IO N AL
REC T IFIER
LO G O
Note: "P" in assembly line
position indicates "Lead-Free"
D ATE C O DE
YEAR 7 = 1 9 9 7
W EE K 1 9
AS S E MBLY
LO T C O D E
LIN E C
8
www.irf.com
IRF3709/S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DAT E CODE
YEAR 0 = 2000
WE E K 02
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
YEAR 0 = 2000
AS S E MB L Y
LOT CODE
WEEK 02
A = AS S E MB L Y S IT E CODE
www.irf.com
9
IRF3709/S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECT IFIER
LOGO
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
DAT E CODE
YEAR 7 = 1997
WEEK 19
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECT IFIER
LOGO
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WEEK 19
A = ASSEMBLYSITE CODE
10
www.irf.com
IRF3709/S/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
This is only applied to TO-220AB package
Starting TJ = 25°C, L = 0.85mH
RG = 25Ω, IAS = 30A.
ꢀ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
www.irf.com
11
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