IRF3709ZCSTRLP [INFINEON]
Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3;型号: | IRF3709ZCSTRLP |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
文件: | 总11页 (文件大小:124K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 94071
IRF3709
IRF3709S
IRF3709L
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
VDSS
30V
RDS(on) max
ID
Converters with Synchronous Rectification
for Telecom and Industrial Use
9.0mΩ
90A
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
Benefits
l Ultra-Low Gate Impedance
D2Pak
IRF3709S
TO-262
IRF3709L
TO-220AB
IRF3709
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
VDS
Parameter
Drain-Source Voltage
Max.
30
Units
V
VGS
Gate-to-Source Voltage
± 20
V
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
90
57
A
360
PD @TC = 25°C
PD @TA = 25°C
Maximum Power Dissipation
Maximum Power Dissipationꢀ
Linear Derating Factor
120
W
W
3.1
0.96
mW/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
1.04
–––
62
Units
RθJC
RθCS
RθJA
RθJA
–––
0.50
–––
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Junction-to-Ambient (PCB mount)ꢀ
40
Notes through are on page 11
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1
02/20/01
IRF3709/3709S/3709L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
1.0
6.4
9.0
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
mΩ
V
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
7.4 10.5
––– 3.0
––– ––– 20
––– ––– 100
––– ––– 200
––– ––– -200
VDS = 24V, VGS = 0V
µA
Drain-to-Source Leakage Current
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 16V
IGSS
nA
V
GS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
53
––– –––
27 41
S
VDS = 15V, ID = 30A
ID = 15A
Qg
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
6.7 –––
9.7 –––
22 –––
11 –––
nC VDS = 16V
VGS = 5.0V
VGS = 0V, VDS = 10V
VDD = 15V
––– 171 –––
ID = 30A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
21 –––
9.2 –––
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2672 –––
––– 1064 –––
––– 109 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 16V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
382
Units
mJ
IAR
Avalanche Current
–––
30
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
––– –––
––– –––
90
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
360
S
––– 0.88 1.3
––– 0.82 –––
V
TJ = 25°C, IS = 30A, VGS = 0V
VSD
Diode Forward Voltage
TJ = 125°C, IS = 30A, VGS = 0V
TJ = 25°C, IF = 30A, VR=15V
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 48
––– 46
––– 48
––– 52
72
69
72
78
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 30A, VR=15V
nC di/dt = 100A/µs
Qrr
2
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IRF3709/3709S/3709L
1000
100
10
1000
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM2.7V
BOTTOM2.7V
100
10
1
2.7V
2.7V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
°
T = 150 C
J
°
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
90A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
100
V
= 15V
DS
20µs PULSE WIDTH
V
=10V
GS
10
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
3.0
4.0
5.0 6.0
7.0
°
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF3709/3709S/3709L
6
5
4
3
2
1
0
4000
I = 30A
D
V
= 0V,
f = 1MHz
C SHORTED
ds
V
V
V
= 24V
= 15V
= 6V
GS
DS
DS
DS
C
= C + C
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
gd
oss
ds
3000
2000
1000
0
C
iss
C
C
oss
rss
1
10
100
0
5
10
15
20
25
30
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10us
100us
°
T = 25 C
1ms
J
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
0.1
0.2
1
10
100
0.8
1.4
2.0
2.6
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF3709/3709S/3709L
RD
100
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
2
DM
0.10
0.05
0.1
t
1
t
0.02
0.01
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF3709/3709S/3709L
1200
1000
800
600
400
200
0
I
15V
D
TOP
13A
19A
BOTTOM 30A
D RIV ER
L
V
DS
D.U .T
R
+
G
V
DD
-
I
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF3709/3709S/3709L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRF3709/3709S/3709L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
-
B
-
3.7 8 (.14 9)
3.5 4 (.13 9)
2.87 (.1 13)
2.62 (.1 03)
4.69 (.1 85)
4.20 (.1 65)
1 .32 (.05 2)
1 .22 (.04 8)
- A
-
6.47 (.255 )
6.10 (.240 )
4
15.24 (.600 )
14.84 (.584 )
1.15 (.045)
M IN
LE A D A S S IG N M E N T S
1
2
3
4
- G A T E
1
2
3
- D R A IN
- S O U R C E
- D R A IN
1 4.09 (.5 55)
1 3.47 (.5 30)
4 .06 (.16 0)
3 .55 (.14 0)
0 .93 (.03 7)
0 .69 (.02 7)
0.5 5 (.0 22)
0.4 6 (.0 18)
3X
3X
1 .4 0 (.05 5)
3 X
1 .1 5 (.04 5)
0.36 (.0 14)
M
B
A
M
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.100)
2X
N O TE S :
1
2
D IME N S IO N IN G
&
TO LE R A N C IN G P E R A N S I Y 14.5M , 19 82.
3
4
O U TLIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B .
C O N TR O LLIN G D IM E N S IO N : IN C H
H E A T S IN K
&
LE A D M E A S U R E M E N T S D O N O T IN C LU D E B U R R S .
TO-220AB Part Marking Information
E XAM PL E : TH IS IS A N IR F 1010
W ITH AS SE M BLY
A
INTE R N AT ION AL
R E C TIFIE R
PA R T N U M BE R
LO T C O D E 9B 1M
IR F 1010
9246
LO G O
9B
1M
D ATE C O D E
(YYW W )
A S SE M B LY
LOT
C O D E
YY
=
YEA R
= W EE K
W W
8
www.irf.com
IRF3709/3709S/3709L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
MAX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIMENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
D2Pak Part Marking Information
A
INTERNATIONAL
RECTIFIER
PART NUMBER
F530S
LOGO
9246
1M
DATE CODE
(YYW W )
9B
ASSEMBLY
YY
=
YEAR
= W EEK
LOT CODE
W W
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9
IRF3709/3709S/3709L
TO-262 Package Outline
TO-262 Part Marking Information
10
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IRF3709/3709S/3709L
D2Pak Tape & Reel Information
TR R
1 .60 (.0 63)
1 .50 (.0 59)
1.60 (.063)
4.10 (.161)
3.90 (.153)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
FEE D D IREC TIO N
TR L
11.60 (.457)
11.40 (.449)
1 .85 (.0 73)
1 .65 (.0 65)
24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
1.75 (.069)
10.90 (.429)
10.70 (.421)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED D IRE CTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
M IN.
30.40 (1.197)
M AX.
NO TES
1. CO MFORM S TO EIA-418.
2. CO NTROLLING DIM ENSIO N: M ILLIM ETER.
3. DIM ENSION M EASURED
:
26.40 (1.039)
24.40 (.961)
4
@ HUB.
3
4. INCLUDES FLANGE DISTORTION
@
O UTER EDGE.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
This is only applied to TO-220AB package
Starting TJ = 25°C, L = 0.85mH
RG = 25Ω, IAS = 30A.
ꢀThis is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/01
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11
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