IRF3710ZSPBF [INFINEON]

AUTOMOTIVE MOSFET; 汽车MOSFET


型号：	IRF3710ZSPBF
厂家：	Infineon
描述：	AUTOMOTIVE MOSFET 汽车MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总12页 (文件大小：324K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 95466

AUTOMOTIVE MOSFET

IRF3710ZPbF

IRF3710ZSPbF

IRF3710ZLPbF

Features

HEXFET^®Power MOSFET

●

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

V_DSS= 100V

R_DS(on)= 18mΩ

Description

I_D= 59A

SpecificallydesignedforAutomotiveapplications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional fea-

turesofthisdesign area175°Cjunctionoperating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient

and reliable device for use in Automotive applica-

tions and a wide variety of other applications.

D²Pak

TO-262

IRF3710ZL

TO-220AB

IRF3710Z

IRF3710ZS

Absolute Maximum Ratings

Parameter

Max.

Units

@ T_C= 25°C

@ T_C= 100°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (See Fig. 9)

Pulsed Drain Current

240

160

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

1.1

± 20

W/°C

E_AS

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

170

200

_AS(tested)

Avalanche Current

I_AR

E_AR

See Fig.12a,12b,15,16

Repetitive Avalanche Energy

°C

Operating Junction and

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.92

–––

Units

°C/W

R_θ

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

0.50

–––

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount, steady state)

HEXFET^®is a registered trademark of International Rectifier.

www.irf.com

6/30/04

IRF3710Z/S/LPbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

∆ΒV_DSS/∆T_J

R_DS(on)

100

–––

0.10

–––

Breakdown Voltage Temp. Coefficient –––

––– V/°C Reference to 25°C, I_D= 1mA

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

–––

2.0

4.0

_GS= 10V, I_D= 35A

Ω

V_GS(th)

–––

V_DS= V_GS, I_D= 250µA

gfs

I_DSS

Forward Transconductance

–––

_DS= 50V, I_D= 35A

_DS= 100V, V_GS= 0V

_DS= 100V, V_GS= 0V, T_J= 125°C

_GS= 20V

Drain-to-Source Leakage Current

–––

µA

250

200

-200

120

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

_GS= -20V

Q_g

Q_gs

Q_gd

t_d(on)

t_r

I_D= 35A

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

V_DS= 80V

_GS= 10V

_DD= 50V

–––

Rise Time

_D= 35A

_G= 6.8Ω

V_GS= 10V

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

L_D

Internal Drain Inductance

4.5

nH Between lead,

6mm (0.25in.)

from package

L_S

Internal Source Inductance

–––

7.5

–––

and center of die contact

pF V_GS= 0V

_DS= 25V

ƒ = 1.0MHz, See Fig. 5

C_iss

Input Capacitance

––– 2900 –––

C_oss

Output Capacitance

–––

290

150

–––

C_rss

Reverse Transfer Capacitance

Output Capacitance

C_oss

––– 1130 –––

_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

_GS= 0V, V_DS= 80V, ƒ = 1.0MHz

C_oss

Output Capacitance

–––

170

280

–––

C_osseff.

Effective Output Capacitance

V_GS= 0V, V_DS= 0V to 80V

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

Continuous Source Current

–––

(Body Diode)

Pulsed Source Current

showing the

integral reverse

I_SM

–––

240

(Body Diode)

Diode Forward Voltage

p-n junction diode.

V_SD

T = 25°C, I = 35A, V = 0V

–––

1.3

t_rr

Q_rr

T = 25°C, I = 35A, V_DD= 25V

J F

di/dt = 100A/µs

Reverse Recovery Time

Reverse Recovery Charge

–––

100

160

t_on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

ꢀ C_osseff. is a fixed capacitance that gives the same charging time

as C_osswhile V_DSis rising from 0 to 80% V_DSS

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

Limited by T_Jmax, starting T_J= 25°C, L = 0.27mH,

R_G= 25Ω, I_AS= 35A, V_GS=10V. Part not

recommended for use above this value.

Limited by T_Jmax, see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

This value determined from sample failure population. 100%

tested to this value in production.

This is applied to D²Pak, when mounted on 1" square PCB

( FR-4 or G-10 Material ). For recommended footprint and

soldering techniques refer to application note #AN-994.

I_SD≤ 35A, di/dt ≤ 380A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C.

Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

www.irf.com

IRF3710Z/S/LPbF

1000

100

1000

100

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

TOP

BOTTOM

4.5V

0.1

0.01

20µs PULSE WIDTH

Tj = 175°C

20µs PULSE WIDTH

Tj = 25°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

120

100

= 25°C

= 175°C

100

= 175°C

= 25°C

= 25V

VDS = 15V

20µs PULSE WIDTH

8 10

, Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

vs. Drain Current

www.irf.com

IRF3710Z/S/LPbF

100000

12.0

10.0

8.0

= 0V,

f = 1 MHZ

iss

I = 35A

= C + C

SHORTED

= 80V

= 50V

= 20V

= C

rss

= C + C

oss

10000

1000

100

Ciss

6.0

Coss

4.0

Crss

2.0

0.0

100

, Drain-to-Source Voltage (V)

Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.

Fig 5. Typical Capacitance vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000.00

100.00

10.00

1.00

1000

100

OPERATION IN THIS AREA

LIMITED BY R (on)

T = 175°C

100µsec

T = 25°C

1msec

Tc = 25°C

10msec

Tj = 175°C

Single Pulse

= 0V

0.1

0.10

100

1000

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

, Drain-toSource Voltage (V)

, Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

IRF3710Z/S/LPbF

3.0

2.5

2.0

1.5

1.0

0.5

0.0

= 59A

= 10V

-60 -40 -20

20 40 60 80 100 120 140 160 180

100

125

150

175

, Case Temperature (°C)

T , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

Fig 9. Maximum Drain Current vs.

vs. Temperature

Case Temperature

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

0.001

SINGLE PULSE

( THERMAL RESPONSE )

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

IRF3710Z/S/LPbF

15V

300

250

200

150

100

TOP

15A

25A

DRIVER

BOTTOM 35A

D.U.T

20V

Ω

0.01

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

100

125

150

175

Starting T , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Fig 12b. Unclamped Inductive Waveforms

vs. Drain Current

10 V

5.0

4.0

3.0

2.0

1.0

Charge

Fig 13a. Basic Gate Charge Waveform

= 250µA

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

D.U.T.

-75 -50 -25

25 50 75 100 125 150 175 200

T , Temperature ( °C )

3mA

Current Sampling Resistors

Fig 14. Threshold Voltage vs. Temperature

Fig 13b. Gate Charge Test Circuit

www.irf.com

IRF3710Z/S/LPbF

1000

100

Duty Cycle = Single Pulse

Allowed avalanche Current vs

avalanche pulsewidth, tav

0.01

assuming

Tj = 25°C due to

∆

avalanche losses

0.05

0.10

0.1

1.0E-08

1.0E-07

1.0E-06

1.0E-05

tav (sec)

1.0E-04

1.0E-03

1.0E-02

1.0E-01

Fig 15. Typical Avalanche Current vs.Pulsewidth

200

150

100

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

TOP

BOTTOM 10% Duty Cycle

= 35A

Single Pulse

4. P_{D (ave)}= Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I_av= Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

T_jmax(assumed as 25°C in Figure 15, 16).

t_{av =}Average time in avalanche.

100

125

150

175

D = Duty cycle in avalanche = t_av·f

Z_thJC(D, t_av) = Transient thermal resistance, see figure 11)

Starting T , Junction Temperature (°C)

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

I_av= 2DT/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_av

Fig 16. Maximum Avalanche Energy

vs. Temperature

www.irf.com

IRF3710Z/S/LPbF

Driver Gate Drive

P.W.

Period

D =

D.U.T

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple

≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

90%

10%

d(on)

d(off)

Fig 18b. Switching Time Waveforms

www.irf.com

IRF3710Z/S/LPbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

3.78 (.149)

- B -

10.29 (.405)

2.87 (.113)

2.62 (.103)

4.69 (.185)

4.20 (.165)

3.54 (.139)

1.32 (.052)

1.22 (.048)

- A -

6.47 (.255)

6.10 (.240)

15.24 (.600)

14.84 (.584)

LEAD ASSIGNMENTS

1 - GATE

1.15 (.045)

MIN

HEXFET

IGBTs, CoPACK

2 - DRAIN

1- GATE

3 - SOURCE

1- GATE

2- DRAIN

3- SOURCE

2- COLLECTOR

3- EMITTER

4- COLLECTOR

4 - DRAIN

4- DRAIN

14.09 (.555)

13.47 (.530)

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.55 (.022)

0.46 (.018)

1.40 (.055)

1.15 (.045)

0.36 (.014)

B A M

2.92 (.115)

2.64 (.104)

2.54 (.100)

NOTES:

DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

CONTROLLING DIMENSION : INCH

OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

EXAMPLE: T HIS IS AN IRF1010

LOT CODE 1789

PART NUMBER

AS S EMB LED ON WW 19, 1997

IN THE AS S EMBLY LINE "C"

INTE RNAT IONAL

RECT IFIER

LOGO

Note: "P" in assembly line

position indicates "Lead-Free"

DAT E CODE

YEAR 7 = 1997

WEEK 19

AS S EMBLY

LOT CODE

LINE C

www.irf.com

IRF3710Z/S/LPbF

D²Pak Package Outline

Dimensions are shown in millimeters (inches)

D²Pak Part Marking Information (Lead-Free)

T H IS IS AN IR F 530S WIT H

P AR T N U MB E R

L OT COD E 8024

IN T E R N AT ION AL

R E CT IF IE R

L OGO

AS S E MB L E D ON WW 02, 2000

IN T H E AS S E MB L Y L IN E "L "

F 530S

D AT E CODE

Y E AR 0 = 2000

W E E K 02

N ote: "P " in as s embly line

pos ition indicates "L ead-F ree"

AS S E MB L Y

L OT COD E

L INE

P AR T N U MB E R

IN T E R N AT ION AL

R E CT IF IE R

L OGO

F 530 S

D AT E CODE

D E S IGN AT E S L E AD -F R E E

P R OD U CT (OP T ION AL )

AS S E M B L Y

L OT CODE

YE AR

WE E K 02

A = AS S E MB L Y S IT E COD E

0 = 2000

www.irf.com

IRF3710Z/S/LPbF

TO-262 Package Outline

IGBT

1- GATE

2- COLLECTOR

3- EMITTER

TO-262 Part Marking Information

E XAMPLE : THIS IS AN IRL3103L

LOT CODE 1789

PART NUMBER

INTERNATIONAL

RECTIFIER

ASSEMBLED ON WW 19, 1997

IN THE ASSEMBLY LINE "C"

LOGO

DATE CODE

YEAR 7 = 1997

WEEK 19

Note: "P" in assembly line

pos ition indicates "Lead-Free"

AS S E MBL Y

LOT CODE

LINE C

PART NUMBER

DATE CODE

INTERNATIONAL

RECTIFIER

LOGO

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

YEAR 7 = 1997

ASSEMBLY

LOT CODE

WE EK 19

A= ASSEMBLY SITE CODE

www.irf.com

IRF3710Z/S/LPbF

D²Pak Tape & Reel Infomation

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

1.85 (.073)

1.65 (.065)

11.60 (.457)

11.40 (.449)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

TRL

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

TO-220AB package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.06/04

www.irf.com

IRF3710ZSPBF [INFINEON]

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