IRF3711PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF3711PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总12页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94948
IRF3711PbF
IRF3711SPbF
IRF3711LPbF
SMPS MOSFET
Applications
l HighFrequencyIsolatedDC-DC
HEXFET® Power MOSFET
Converters with Synchronous Rectification
for Telecom and Industrial Use
VDSS
20V
RDS(on) max
ID
110A
6.0mΩ
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
l Lead-Free
Benefits
D2Pak
TO-262
l Ultra-LowGateImpedance
TO-220AB
IRF3711PbF
IRF3711SPbF IRF3711LPbF
l
Very Low RDS(on) at 4.5V VGS
l FullyCharacterizedAvalancheVoltage
and Current
Absolute Maximum Ratings
Symbol
VDS
Parameter
Drain-Source Voltage
Max.
20
Units
V
VGS
Gate-to-Source Voltage
± 20
V
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
110
69
A
440
PD @TC = 25°C
PD @TA = 25°C
Maximum Power Dissipation
Maximum Power Dissipationꢀ
Linear Derating Factor
120
W
W
3.1
0.96
W/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
1.04
–––
62
Units
RθJC
RθCS
RθJA
RθJA
–––
0.50
–––
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)ꢀ
°C/W
40
Notes through are on page 11
www.irf.com
1
2/27/04
IRF3711/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20 ––– –––
––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
1.0
4.7
6.2
6.0
8.5
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
mΩ
V
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 3.0
––– ––– 20
––– ––– 100
––– ––– 200
––– ––– -200
µA
Drain-to-Source Leakage Current
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 16V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 16V, ID = 30A
ID = 15A
53
––– –––
29 44
S
Qg
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
7.3 –––
8.9 –––
33 –––
12 –––
nC VDS = 10V
VGS = 4.5V
VGS = 0V, VDS = 10V
VDD = 10V
ID = 30A
––– 220 –––
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
17 –––
12 –––
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2980 –––
––– 1770 –––
––– 280 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
460
30
Units
mJ
IAR
Avalanche Current
–––
A
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
––– –––
––– –––
110
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
440
––– 0.88 1.3
––– 0.82 –––
V
TJ = 25°C, IS = 30A, VGS = 0V
TJ = 125°C, IS = 30A, VGS = 0V
TJ = 25°C, IF = 16A, VR=10V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 50
––– 61
––– 48
––– 65
75
92
72
98
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 16A, VR=10V
nC di/dt = 100A/µs
Qrr
2
www.irf.com
IRF3711/S/LPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 150 C
J
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
110A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
100
V
= 25V
DS
V
=10V
GS
20µs PULSE WIDTH
10
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.0
4.0
5.0
6.0 7.0 8.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF3711/S/LPbF
14
12
10
8
100000
I
D
= 30A
V
C
= 0V,
f = 1 MHZ
GS
V
V
= 16V
= 10V
DS
DS
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C + C
gd
oss
ds
10000
1000
100
Ciss
Coss
6
4
Crss
2
FOR TEST CIRCUIT
SEE FIGURE 13
1
10
, Drain-to-Source Voltage (V)
100
0
0
20
40
60
80
V
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
100µsec
1msec
°
T = 25 C
J
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
1
0.1
0.2
0.8
1.4
2.0
2.6
1
10
, Drain-toSource Voltage (V)
100
V
,Source-to-Drain Voltage (V)
SD
V
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRF3711/S/LPbF
RD
120
100
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
DꢀUꢀTꢀ
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
2
DM
0.10
0.05
0.1
0.01
t
1
t
0.02
0.01
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T =P
t / t
1
x Z
+ T
thJC C
J
DM
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF3711/S/LPbF
1400
1200
1000
800
600
400
200
0
I
15V
D
TOP
13A
19A
BOTTOM 30A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
IRF3711/S/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
DꢀUꢀT
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as DꢀUꢀTꢀ
• ISD controlled by Duty Factor "D"
• DꢀUꢀTꢀ - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
www.irf.com
7
IRF3711/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
AS S EMB LED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
INTE RNAT IONAL
RECT IFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 7 = 1997
WEEK 19
AS S EMBLY
LOT CODE
LINE C
8
www.irf.com
IRF3711/S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530S WIT H
P AR T N U MB E R
L OT CODE 8024
IN T E R N AT IONAL
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB L Y L INE "L "
R E CT IF IE R
L OGO
F 530S
DAT E CODE
YE AR 0 = 2000
WE E K 02
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
L OT CODE
L INE
L
OR
P AR T N U MB E R
IN T E R N AT ION AL
R E CT IF IE R
L OGO
F 530S
D AT E COD E
P
=
D E S IGN AT E S L E AD -F R E E
P R OD U CT (OP T ION AL )
AS S E MB L Y
L OT COD E
YE AR
W E E K 02
A = AS S E MB L Y S IT E COD E
0 = 2000
www.irf.com
9
IRF3711/S/LPbF
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
E XAMPLE : THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
LOGO
DATE CODE
YEAR 7 = 1997
WEEK 19
Note: "P" in assembly line
pos ition indicates "Lead-Free"
AS S E MBL Y
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WE EK 19
A= ASSEMBLY SITE CODE
10
www.irf.com
IRF3711/S/LPbF
D2Pak Tape & Reel Infomation
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is only applied to TO-220AB package
max. junction temperature.
Starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 30A.
ꢀ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/04
www.irf.com
11
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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