IRF3717PBF [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET


型号：	IRF3717PBF
厂家：	Infineon
描述：	HEXFET Power MOSFET HEXFET功率MOSFET 光电二极管
文件：	总10页 (文件大小：188K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 95719

IRF3717PbF

HEXFET^®Power MOSFET

Applications

l Synchronous MOSFET for Notebook

Processor Power

V_DSS

R_DS(on)max

I_D

4.4m @V_GS= 10V

20V

20A

l Synchronous Rectifier MOSFET for

Isolated DC-DC Converters in

Networking Systems

l Lead-Free

Benefits

l Ultra-Low Gate Impedance

l Very Low R_DS(on)

SO-8

Top View

l Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

160

2.5

1.6

@T_A= 25°C

@T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

W/°C

°C

-55 to + 150

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

R_θ

°C/W

–––

Notes through are on page 10

www.irf.com

8/10/04

IRF3717PbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

20 ––– –––

––– 0.014 –––

Conditions

V_GS= 0V, I_D= 250µA

BV_DSS

∆Β

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

∆

V_DSS/ T_J

V/°C Reference to 25°C, I_D= 1mA

R_DS(on)

–––

1.55

–––

3.7

4.8

4.4

5.7

_GS= 10V, I_D= 20A

V_GS= 4.5V, I_D= 16A

_DS= V_GS, I_D= 250µA

mΩ

V_GS(th)

Gate Threshold Voltage

2.0

2.45

∆

V_GS(th)/ T_J

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

-5.4

–––

––– mV/°C

I_DSS

1.0

150

100

µA V_DS= 16V, V_GS= 0V

_DS= 16V, V_GS= 0V, T_J= 125°C

_GS= 20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

––– -100

V_GS= -20V

gfs

Q_g

–––

V_DS= 10V, I_D= 16A

–––

Q_gs1

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

6.8

2.2

7.3

5.7

9.5

–––

V_DS= 10V

Q_gs2

Q_gd

nC V_GS= 4.5V

I_D= 16A

Q_godr

Gate Charge Overdrive

See Fig. 16

Q_sw

Switch Charge (Q_gs2+ Q_gd)

Q_oss

t_d(on)

t_r

Output Charge

nC V_DS= 10V, V_GS= 0V

Turn-On Delay Time

Rise Time

V_DD= 10V, V_GS= 4.5V

I_D= 16A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

ns Clamped Inductive Load

6.0

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

––– 2890 –––

V_GS= 0V

pF V_DS= 10V

ƒ = 1.0MHz

–––

930

430

–––

Avalanche Characteristics

Parameter

Typ.

–––

Max.

Units

Single Pulse Avalanche Energy

E_AS

I_AR

Avalanche Current

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

Continuous Source Current

–––

(Body Diode)

Pulsed Source Current

showing the

integral reverse

I_SM

–––

160

(Body Diode)

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

–––

1.0

T = 25°C, I = 16A, V = 0V

J S GS

Reverse Recovery Time

Reverse Recovery Charge

ns T = 25°C, I = 16A, V_DD= 10V

J F

Q_rr

di/dt = 100A/µs

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IRF3717PbF

1000

100

1000

100

VGS

10V

VGS

10V

TOP

4.5V

3.8V

3.5V

3.3V

3.0V

2.8V

2.5V

4.5V

3.8V

3.5V

3.3V

3.0V

2.8V

2.5V

BOTTOM

20µs PULSE WIDTH

Tj = 25°C

2.5V

20µs PULSE WIDTH

Tj = 150°C

2.5V

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

1.5

1.0

0.5

1000

= 20A

= 10V

100

= 150°C

= 25°C

= 10V

20µs PULSE WIDTH

0.1

-60 -40 -20

20 40 60 80 100 120 140 160

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

vs.Temperature

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IRF3717PbF

100000

6.0

5.0

4.0

3.0

2.0

1.0

0.0

= 0V,

= C

f = 1 MHZ

I =16A

+ C , C

SHORTED

iss

= C

= 16V

= 10V

rss

oss

= C + C

10000

1000

100

iss

oss

rss

100

, Drain-to-Source Voltage (V)

Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance vs.

Gate-to-Source Voltage

Drain-to-SourceVoltage

1000.00

100.00

10.00

1.00

1000

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

= 150°C

100µsec

= 25°C

1msec

= 25°C

Tj = 150°C

Single Pulse

10msec

= 0V

0.10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

100

, Source-to-Drain Voltage (V)

, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

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IRF3717PbF

2.5

2.0

1.5

1.0

= 250µA

-75 -50 -25

, Temperature ( °C )

75 100 125 150

100

125

150

, Ambient Temperature (°C)

Fig 9. Maximum Drain Current vs.

Fig 10. Threshold Voltage vs. Temperature

AmbientTemperature

100

D = 0.50

0.20

0.10

0.05

R₁

R₂

R₃

R₄

Ri (°C/W) τi (sec)

0.02

0.01

1.4174

0.000277

0.103855

1.362000

39.60000

^Jτ_J

^Cτ

11.3607

21.8639

15.3721

¹τ₁

²τ₂

³τ₃

⁴τ₄

0.1

Ci= τi/Ri

SINGLE PULSE

( THERMAL RESPONSE )

0.01

Notes:

1. Duty factor D =

2. Peak T

/ t

+ T

thJA

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

100

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF3717PbF

150

100

15V

TOP

6.5A

7.5A

BOTTOM 16A

DRIVER

D.U.T

V0_GV_S

Ω

0.01

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

100

125

150

Starting T , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

L_D

V_DS

Fig 12b. Unclamped Inductive Waveforms

V_DD

D.U.T

Current Regulator

V_GS

Same Type as D.U.T.

Pulse Width < 1µs

Duty Factor < 0.1%

50KΩ

.2µF

12V

Fig 14a. Switching Time Test Circuit

V_DS

.3µF

D.U.T.

90%

3mA

10%

V_GS

Current Sampling Resistors

t_d(on)

t_d(off)

t_r

t_f

Fig 13. Gate Charge Test Circuit

Fig 14b. Switching Time Waveforms

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IRF3717PbF

Driver Gate Drive

P.W.

D =

D.U.T

Period

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

Vds

Vgs

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 16. Gate Charge Waveform

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IRF3717PbF

Power MOSFET Selection for Non-Isolated DC/DC Converters

Synchronous FET

Control FET

The power loss equation for Q2 is approximated

by;

Special attention has been given to the power losses

in the switching elements of the circuit - Q1 and Q2.

Power losses in the high side switch Q1, also called

the Control FET, are impacted by the R_ds(on)of the

MOSFET, but these conduction losses are only about

one half of the total losses.

P = P

+ P + P^*

loss

conduction

drive

output

P = I_rms²× R_ds(on)

loss ( )

Power losses in the control switch Q1 are given

by;

+ Q × V × f

(

)

⎛

⎜

Q_oss

⎞

⎠

P_loss= P_conduction+ P_switching+ P_drive+ P_output

×V × f + Q × V × f

(

)

⎝ 2

This can be expanded and approximated by;

*dissipated primarily in Q1.

= I ²× R_{ds(on )}

(

)

loss

rms

For the synchronous MOSFET Q2, R_ds(on)is an im-

portant characteristic; however, once again the im-

portance of gate charge must not be overlooked since

it impacts three critical areas. Under light load the

MOSFET must still be turned on and off by the con-

trol IC so the gate drive losses become much more

significant. Secondly, the output charge Q_ossand re-

verse recovery charge Q_rrboth generate losses that

are transfered to Q1 and increase the dissipation in

that device. Thirdly, gate charge will impact the

MOSFETs’ susceptibility to Cdv/dt turn on.

⎛

Q_gd

i_g

⎞

Q_gs2

i_g

⎞

⎟

⎜

⎟

⎜

+ I ×

× V × f + I ×

× V × f

⎝

⎠

⎝

⎠

+ Q × V × f

(

)

⎛ Q_oss

⎞

⎠

×V × f

⎝

This simplified loss equation includes the terms Q_gs2

The drain of Q2 is connected to the switching node

of the converter and therefore sees transitions be-

tween ground and V_in. As Q1 turns on and off there is

a rate of change of drain voltage dV/dt which is ca-

pacitively coupled to the gate of Q2 and can induce

a voltage spike on the gate that is sufficient to turn

the MOSFET on, resulting in shoot-through current .

The ratio of Q_gd/Q_gs1must be minimized to reduce the

potential for Cdv/dt turn on.

and Q_osswhich are new to Power MOSFET data sheets.

Q_gs2is a sub element of traditional gate-source

charge that is included in all MOSFET data sheets.

The importance of splitting this gate-source charge

into two sub elements, Q_gs1and Q_gs2, can be seen from

Fig 16.

Q_gs2indicates the charge that must be supplied by

the gate driver between the time that the threshold

voltage has been reached and the time the drain cur-

rent rises to I_dmaxat which time the drain voltage be-

gins to change. Minimizing Q_gs2is a critical factor in

reducing switching losses in Q1.

Q_ossis the charge that must be supplied to the out-

put capacitance of the MOSFET during every switch-

ing cycle. Figure A shows how Q_ossis formed by the

parallel combination of the voltage dependant (non-

linear) capacitances C_dsand C_dgwhen multiplied by

the power supply input buss voltage.

Figure A: Q_ossCharacteristic

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IRF3717PbF

SO-8 Package Outline

Dimensions are shown in millimeters (inches)

INCHES

MILLIMETERS

DIM

MIN

.0532

MAX

.0688

.0098

.020

MIN

1.35

0.10

0.33

0.19

4.80

3.80

MAX

1.75

0.25

0.51

0.25

5.00

4.00

A1 .0040

.013

.0075

.189

.0098

.1968

.1574

0.25 [.010]

.1497

.050 BASIC

1.27 BASIC

e 1 .025 BASIC

0.635 BASIC

.2284

.0099

.016

0°

.2440

.0196

.050

8°

5.80

0.25

0.40

0°

6.20

0.50

1.27

8°

K x 45°

0.10 [.004]

8X c

8X L

8X b

0.25 [.010]

F OOT PRINT

8X 0.72 [.028]

NOT ES :

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONT ROLLING DIMENS ION: MILLIMET ER

3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OUT L INE CONF OR MS T O JE DE C OU T L INE MS -012AA.

DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

6.46 [.255]

DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

ASUBSTRATE.

3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

DATE CODE (YWW)

P = DE S I GNAT E S L E AD-F R E E

PRODUCT (OPTIONAL)

Y= LAST DIGIT OF THE YEAR

XXXX

F7101

WW = WEEK

INTERNATIONAL

RECTIFIER

LOGO

A = ASSEMBLYSITE CODE

LOT CODE

PART NUMBER

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IRF3717PbF

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.26mH, R_G= 25Ω, I_AS= 16A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/04

www.irf.com

IRF3717PBF [INFINEON]

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