IRF40B207 [INFINEON]
Brushed Motor drive applications;
| 型号： | IRF40B207 |
| 厂家： | 
Infineon |
| 描述： | Brushed Motor drive applications |
| 文件： | 总10页 (文件大小：545K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRF40B207
HEXFET® Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
VDSS
40V
RDS(on) typ.
max
3.6m
4.5m
95A
ID
Benefits
S
D
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free*
G
RoHS Compliant, Halogen-Free
G
D
S
Gate
Drain
Source
Standard Pack
Form
Base part number
Package Type
Orderable Part Number
Quantity
IRF40B207
TO-220
Tube
50
IRF40B207
15
12
9
100
80
60
40
20
0
I
= 57A
D
T
= 125°C
= 25°C
J
6
3
T
J
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage (V)
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
1
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
April 1, 2015
IRF40B207
Absolute Maximum Rating
Symbol
Parameter
Max.
95
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
67
A
IDM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
380
83
PD @TC = 25°C
W
W/°C
V
0.56
± 20
VGS
TJ
Gate-to-Source Voltage
Operating Junction and
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
300
10 lbf·in (1.1 N·m)
Avalanche Characteristics
EAS (Thermally limited)
EAS (Thermally limited)
85
Single Pulse Avalanche Energy
mJ
167
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
IAR
EAR
A
mJ
See Fig 15, 16, 23a, 23b
Thermal Resistance
Symbol
Parameter
Typ.
–––
0.50
–––
Max.
1.8
Units
Junction-to-Case
RJC
RCS
RJA
Case-to-Sink, Flat Greased Surface
°C/W
–––
62
Junction-to-Ambient
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
40 ––– –––
––– 0.039 –––
Conditions
VGS = 0V, ID = 250µA
V
V/°C Reference to 25°C, ID = 1mA
V(BR)DSS/TJ
–––
–––
2.2
3.6
5.4
3.0
4.5
–––
3.9
1.0
V
V
GS = 10V, ID = 57A
GS = 6.0V, ID = 29A
RDS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
m
V
VGS(th)
VDS = VGS, ID = 50µA
––– –––
V
V
V
V
DS =40 V, VGS = 0V
DS =40V,VGS = 0V,TJ =125°C
GS = 20V
IDSS
Drain-to-Source Leakage Current
µA
––– ––– 150
––– ––– 100
––– ––– -100
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
IGSS
RG
nA
GS = -20V
–––
2.0
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.052mH, RG = 50, IAS = 57A, VGS =10V.
ISD 57A, di/dt 860A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V.
2
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
April 1, 2015
IRF40B207
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min.
170
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
–––
45
–––
68
S
VDS = 10V, ID =57A
Qg
ID = 57A
Qgs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
12
–––
–––
–––
–––
–––
VDS = 20V
nC
Qgd
15
VGS = 10V
Qsync
td(on)
tr
30
7.8
35
VDD = 20V
ID = 30A
Rise Time
ns
td(off)
tf
Turn-Off Delay Time
–––
–––
–––
–––
–––
25
19
–––
–––
–––
–––
–––
RG= 2.7
Fall Time
VGS = 10V
Ciss
Coss
Crss
Input Capacitance
2110
340
220
VGS = 0V
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
ƒ = 1.0MHz, See Fig.7
pF
Coss eff.(ER)
Coss eff.(TR)
–––
–––
400
498
–––
–––
VGS = 0V, VDS = 0V to 32V
Output Capacitance (Time Related)
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
IS
–––
–––
–––
95
A
G
ISM
–––
380
1.3
S
VSD
Diode Forward Voltage
–––
–––
–––
0.9
6.4
21
V
TJ = 25°C,IS = 57A,VGS = 0V
dv/dt
Peak Diode Recovery dv/dt
––– V/ns TJ = 175°C,IS = 57A,VDS = 40V
–––
TJ = 25°C
VDD = 34V
IF = 57A,
trr
Reverse Recovery Time
ns
–––
–––
–––
–––
22
13
15
1.1
–––
–––
–––
–––
TJ = 125°C
TJ = 25°C di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
TJ = 125°C
IRRM
TJ = 25°C
3
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
April 1, 2015
IRF40B207
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
1
60µs
Tj = 175°C
PULSE WIDTH
60µs
Tj = 25°C
PULSE WIDTH
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
1000
2.2
1.8
1.4
1.0
0.6
I
= 57A
D
V
= 10V
GS
T
= 175°C
J
100
10
1
T
= 25°C
J
V
= 10V
DS
60µs PULSE WIDTH
0.1
2
4
6
8
10
-60
-20
T
20
60
100
140
180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
10000
1000
14
V
C
= 0V,
f = 1 MHZ
GS
= C + C , C SHORTED
I = 57A
D
iss
gs
gd ds
12
C
= C
rss
gd
V
V
= 32V
= 20V
DS
DS
C
= C + C
oss
ds
gd
10
8
VDS= 8V
C
iss
6
C
C
oss
rss
4
2
100
0
0.1
1
10
100
0
10
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 8. Typical Gate Charge vs.
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com © 2015 International Rectifier
Gate-to-Source Voltage
4
Submit Datasheet Feedback
April 1, 2015
IRF40B207
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
T
= 175°C
J
1msec
T
= 25°C
J
1
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.01
V
= 0V
GS
0.1
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
0.30
0.25
0.20
0.15
0.10
0.05
0.00
50
Id = 1.0mA
48
46
44
42
40
38
-5
0
5
10 15 20 25 30 35 40 45
-60
-20
20
60
100
140
180
T
, Temperature ( °C )
J
V
Drain-to-Source Voltage (V)
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
20
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
15
10
5
0
0
20 40 60 80 100 120 140 160 180 200
I , Drain Current (A)
D
Fig 13. Typical On-Resistance vs. Drain Current
© 2015 International Rectifier Submit Datasheet Feedback
5
www.irf.com
April 1, 2015
IRF40B207
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart = 25°C (Single Pulse)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
100
80
60
40
20
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
= 57A
I
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
175
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)· av
t
Fig 16. Maximum Avalanche Energy vs. Temperature
www.irf.com © 2015 International Rectifier
6
Submit Datasheet Feedback
April 1, 2015
IRF40B207
7
6
5
4
3
2
1
0
4.5
3.5
2.5
1.5
0.5
I
= 38A
= 34V
F
V
R
T = 25°C
J
T = 125°C
J
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
0
200
400
600
800
-75
-25
T
25
75
125
175
di /dt (A/µs)
F
, Temperature ( °C )
J
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
80
7
6
5
4
3
2
1
0
I
= 38A
= 34V
I
= 57A
= 34V
F
F
70
60
50
40
30
20
10
V
V
R
R
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
0
200
400
600
800
0
200
400
600
800
di /dt (A/µs)
F
Fig 20. Typical Stored Charge vs. dif/dt
di /dt (A/µs)
Fig 19. TypicalFRecovery Current vs. dif/dt
80
I
= 57A
= 34V
F
70
60
50
40
30
20
10
0
V
R
T = 25°C
J
T = 125°C
J
0
200
400
600
800
di /dt (A/µs)
F
Fig 21. Typical Stored Charge vs. dif/dt
© 2015 International Rectifier Submit Datasheet Feedback
7
www.irf.com
April 1, 2015
IRF40B207
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Fig 25a. Gate Charge Test Circuit
8
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
April 1, 2015
IRF40B207
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E X A M P L E :
T H IS IS A N IR F 1 0 1 0
L O C O D E 1 7 8 9
A S S E M B L E D
IN T H E A S S E M B L Y L IN E "C "
P A R T N U M B E R
D A T E C O D E
T
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
O
N
W
W
1 9 , 2 0 0 0
Y E A R
E E K 1 9
L IN E
0
=
2 0 0 0
N o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d F r e e "
A S S E M B L Y
W
-
L O
T C O D E
C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
April 1, 2015
IRF40B207
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
TO-220
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10 www.irf.com
© 2015 International Rectifier Submit Datasheet Feedback April 1, 2015
相关型号：
IRF4104STRLPBF
Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明