IRF4905PBF [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET


型号：	IRF4905PBF
厂家：	Infineon
描述：	HEXFET Power MOSFET HEXFET功率MOSFET 晶体晶体管开关脉冲 PC 局域网
文件：	总8页 (文件大小：179K)
中文：	中文翻译
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PD - 94816

IRF4905PbF

HEXFET^®Power MOSFET

ꢃ Advanced Process Technology

ꢃ Ultra Low On-Resistance

ꢃ Dynamic dv/dt Rating

ꢃ 175°C Operating Temperature

ꢃ Fast Switching

V_DSS= -55V

R_DS(on)= 0.02Ω

ꢃ P-Channel

ꢃ Fully Avalanche Rated

ꢃ Lead-Free

Description

I_D= -74A

Fifth Generation HEXFETs from InternationalRectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power

dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-

220 contribute to its wide acceptance throughout the

industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

-74

-52

-260

200

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current ꢀ

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

1.3

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energyꢁ

Avalanche Currentꢀ

930

-38

E_AR

dv/dt

T_J

Repetitive Avalanche Energyꢀ

Peak Diode Recovery dv/dt ꢂ

Operating Junction and

-5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Typ.

–––

0.50

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.75

–––

°C/W

11/6/03

IRF4905PbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

-55 ––– –––

Conditions

V_GS= 0V, I_D= -250µA

V_(BR)DSS

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, I_D= -1mA

R_DS(on)

V_GS(th)

g_fs

Static Drain-to-Source On-Resistance ––– ––– 0.02

Ω

V_GS= -10V, I_D= -38A ꢄ

V_DS= V_GS, I_D= -250µA

V_DS= -25V, I_D= -38A

V_DS= -55V, V_GS= 0V

V_DS= -44V, V_GS= 0V, T_J= 150°C

V_GS= 20V

Gate Threshold Voltage

-2.0 ––– -4.0

21 ––– –––

Forward Transconductance

––– ––– -25

––– ––– -250

––– ––– 100

––– ––– -100

––– ––– 180

––– ––– 32

––– ––– 86

I_DSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

I_GSS

V_GS= -20V

Q_g

I_D= -38A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

nC V_DS= -44V

V_GS= -10V, See Fig. 6 and 13 ꢄ

–––

18 –––

99 –––

61 –––

96 –––

V_DD= -28V

RiseTime

I_D= -38A

t_d(off)

t_f

Turn-Off Delay Time

FallTime

R_G= 2.5Ω

R_D= 0.72Ω, See Fig. 10 ꢄ

Between lead,

6mm (0.25in.)

4.5

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

–––

from package

7.5

and center of die contact

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

––– 3400 –––

––– 1400 –––

––– 640 –––

Output Capacitance

V_DS= -25V

Reverse Transfer Capacitance

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFETsymbol

I_S

-74

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode) ꢀ

integral reverse

-260

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

––– ––– -1.6

––– 89 130

––– 230 350

T_J= 25°C, I_S= -38A, V_GS= 0V ꢄ

T_J= 25°C, I_F= -38A

Q_rr

t_on

nC di/dt = -100A/µs ꢄ

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

ꢀ Repetitive rating; pulse width limited by

ꢁ I_SD≤ -38A, di/dt ≤ -270A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C

max. junction temperature. ( See fig. 11 )

ꢂ Starting T_J= 25°C, L = 1.3mH

ꢃ Pulse width ≤ 300µs; duty cycle ≤ 2%.

R_G= 25Ω, I_AS= -38A. (See Figure 12)

IRF4905PbF

1000

100

1000

100

VGS

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

VGS

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

TOP

BOTTOM - 4.5V

-4.5V

20µs PULSE WIDTH

= 175°C

= 25°C

0.1

100

0.1

100

-V , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

2.0

1.5

1.0

0.5

0.0

1000

= -64A

T = 25°C

100

T = 175°C

V_DS= -25V

20µs PULSE WIDTH

= -10V

₁₀A

-60 -40 -20

20 40 60 80 100 120 140 160 180

, Junction Temperature (°C)

-V_GS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

IRF4905PbF

7000

= -38A

= 0V,

f = 1MHz

iss

rss

oss

= C + C

SHORTED

= C

6000

5000

4000

3000

2000

1000

= -44V

= -28V

= C + C

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

200

100

120

160

-V , Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

1000

100

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 175°C

100µs

T = 25°C

1ms

10ms

= 25°C

= 175°C

= 0V

Single Pulse

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

100

-V , Drain-to-Source Voltage (V)

-V , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

ForwardVoltage

IRF4905PbF

R_D

V_DS

V_GS

D.U.T.

R_G

V_DD

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

d(on)

d(off)

10%

100

125

150

175

T , Case Temperature ( C)

90%

Fig 9. Maximum Drain Current Vs.

CaseTemperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.1

0.10

0.05

0.02

SINGLE PULSE

(THERMAL RESPONSE)

0.01

Notes:

1. Duty factor D =

t / t

2. Peak T =P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case

IRF4905PbF

2500

2000

1500

1000

500

TOP

-16A

-27A

BOTTOM -38A

D.U.T

DRIVER

-20V

0.01

Ω

15V

Fig 12a. Unclamped Inductive Test Circuit

175

100

125

150

Starting T , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

(BR)DSS

Fig12b. UnclampedInductiveWaveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

-10V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

IRF4905PbF

Peak Diode Recovery dv/dt Test Circuit

ꢀ

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T*

ꢂ

ꢁ

ꢃ

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

[

=10V

] ***

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

]

[

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

[

]

Ripple ≤ 5%

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig14. ForP-ChannelHEXFETS

IRF4905PbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

3.78 (.149)

- B -

10.29 (.405)

2.87 (.113)

2.62 (.103)

4.69 (.185)

4.20 (.165)

3.54 (.139)

1.32 (.052)

1.22 (.048)

- A -

6.47 (.255)

6.10 (.240)

15.24 (.600)

14.84 (.584)

LEAD ASSIGNMENTS

1.15 (.045)

MIN

HEXFET

IGBTs, CoPACK

1 - GATE

2 - DRAIN

3 - SOURCE

2- DRAIN

3- SOURCE

4 - DRAIN

1- GATE

2- COLLECTOR

3- EMITTER

4- COLLECTOR

4- DRAIN

14.09 (.555)

13.47 (.530)

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.55 (.022)

0.46 (.018)

1.40 (.055)

1.15 (.045)

0.36 (.014)

B A M

2.92 (.115)

2.64 (.104)

2.54 (.100)

NOTES:

DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

CONTROLLING DIMENSION : INCH

OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

EXAMPLE: THIS IS AN IRF1010

LOT CODE 1789

PART NUMBER

ASSEMBLED ON WW 19, 1997

IN THE ASSEMBLY LINE "C"

INTERNATIONAL

RECTIFIER

LOGO

Note: "P" in assembly line

position indicates "Lead-Free"

DATE CODE

YEAR 7 = 1997

WEEK 19

ASSEMBLY

LOT CODE

LINE C

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.11/03

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