IRF510STRL [INFINEON]

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN;
IRF510STRL
型号: IRF510STRL
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

晶体 晶体管 开关 脉冲 局域网
文件: 总6页 (文件大小:179K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IRF510STRLPBF

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
VISHAY

IRF510STRLPBF

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
INFINEON

IRF510STRR

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
INFINEON

IRF510STRRPBF

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
VISHAY

IRF510STRRPBF

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
INFINEON

IRF510T

4 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MOTOROLA

IRF510U

Power Field-Effect Transistor, 4A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA

IRF510U2

Power Field-Effect Transistor, 4A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA

IRF510W

4A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MOTOROLA

IRF510WC

4A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MOTOROLA

IRF511

N-Channel Power MOSFETs, 5.5 A, 60-100V
FAIRCHILD

IRF511

N-Channel Enhancement-Mode Vertical DMOS Power FETs
SUPERTEX