IRF510T [MOTOROLA]

4 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB;
IRF510T
型号: IRF510T
厂家: MOTOROLA    MOTOROLA
描述:

4 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

文件: 总2页 (文件大小:66K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IRF510U

Power Field-Effect Transistor, 4A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA

IRF510U2

Power Field-Effect Transistor, 4A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA

IRF510W

4A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MOTOROLA

IRF510WC

4A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MOTOROLA

IRF511

N-Channel Power MOSFETs, 5.5 A, 60-100V
FAIRCHILD

IRF511

N-Channel Enhancement-Mode Vertical DMOS Power FETs
SUPERTEX

IRF511

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs
HARRIS

IRF511

IRF511
TI

IRF511

Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA

IRF511-001PBF

5.6A, 80V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET
INFINEON

IRF511-002

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRF511-003PBF

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON