IRF540NPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF540NPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94812
IRF540NPbF
HEXFET® Power MOSFET
ꢀ Advanced Process Technology
ꢀ Ultra Low On-Resistance
ꢀ Dynamic dv/dt Rating
ꢀ 175°C Operating Temperature
ꢀ Fast Switching
D
VDSS = 100V
RDS(on) = 44mΩ
G
ꢀ Fully Avalanche Rated
ꢀ Lead-Free
ID = 33A
S
Description
AdvancedHEXFET® PowerMOSFETsfromInternational
Rectifierutilizeadvancedprocessingtechniquestoachieve
extremelylowon-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
knownfor,providesthedesignerwithanextremelyefficient
andreliabledeviceforuseinawidevarietyofapplications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ꢀ
33
23
A
110
PD @TC = 25°C
Power Dissipation
130
W
W/°C
V
Linear Derating Factor
0.87
± 20
16
VGS
IAR
Gate-to-Source Voltage
Avalanche Currentꢀ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energyꢀ
Peak Diode Recovery dv/dt ꢁ
Operating Junction and
13
mJ
V/ns
7.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
Units
RθJC
RθCS
RθJA
1.15
–––
62
°C/W
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1
11/3/03
IRF540NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 44
mΩ VGS = 10V, ID = 16A ꢀ
2.0
21
––– 4.0
––– –––
V
S
VDS = VGS, ID = 250µA
VDS = 50V, ID = 16Aꢀ
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 71
––– ––– 14
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 16A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 80V
VGS = 10V, See Fig. 6 and 13
––– –––
21
–––
–––
–––
–––
11 –––
35 –––
39 –––
35 –––
VDD = 50V
ID = 16A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 5.1Ω
VGS = 10V, See Fig. 10 ꢀ
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
S
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
G
7.5
Ciss
Coss
Crss
EAS
Input Capacitance
––– 1960 –––
––– 250 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energyꢀ
–––
40 –––
pF
ƒ = 1.0MHz, See Fig. 5
––– 700ꢁ185ꢂ mJ IAS = 16A, L = 1.5mH
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
33
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)ꢀ
integral reverse
p-n junction diode.
110
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.2
––– 115 170
––– 505 760
V
TJ = 25°C, IS = 16A, VGS = 0V ꢂ
ns
TJ = 25°C, IF = 16A
Qrr
ton
nC di/dt = 100A/µs ꢂ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ꢁ ISD ≤ 16A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS
,
ꢀ Repetitive rating; pulse width limited by
TJ ≤ 175°C
max. junction temperature. (See fig. 11)
ꢂ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢃ Starting TJ = 25°C, L =1.5mH
ꢄ This is a typical value at device destruction and represents
operation outside rated limits.
RG = 25Ω, IAS = 16A. (See Figure 12)
ꢅ This is a calculated value limited to TJ = 175°C .
2
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IRF540NPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 175 C
J
°
T = 25 C
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.5
33A
=
I
D
3.0
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
100
°
T = 175 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
10
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
5.0
6.0
7.0 8.0
9.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRF540NPbF
3000
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 16A
GS
C
= C + C
iss
gs
gd ,
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C
rss
gd
2500
2000
1500
1000
500
C
= C + C
oss
ds
gd
C
iss
C
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
0
0
20
40
60
80
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
10
1
100
10
1
°
T = 175 C
J
100µsec
1msec
°
T = 25 C
J
T
= 25°C
10msec
A
T = 175°C
J
V
= 0 V
Single Pulse
GS
0.1
0.2
0.1
0.6
1.0
1.4
1.8
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF540NPbF
35
30
25
20
15
10
5
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF540NPbF
400
300
200
100
0
I
15V
D
TOP
6.5A
11.3A
BOTTOM 16A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF540NPbF
Peak Diode Recovery dv/dt Test Circuit
+
ꢀ
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
+
ꢂ
-
ꢁ
-
+
ꢃ
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
[
[
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRF540NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMBLY
LOT CODE
LINE C
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
8
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相关型号：
IRF540NSTRRHR
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2
INFINEON
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