IRF5M5210UPBF [INFINEON]
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Infineon 
PD - 94247
HEXFET® POWER MOSFET
THRU-HOLE (TO-254AA)
IRF5M5210
100V, P-CHANNEL
Product Summary
Part Number
BV
RDS(on)
ID
DSS
IRF5M5210
-100V
0.07Ω
-34A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
TO-254AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= -10V, T = 25°C Continuous Drain Current
-34
-21
D
GS
C
A
I
D
= -10V, T = 100°C Continuous Drain Current
C
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
-136
125
DM
@ T = 25°C
P
W
W/°C
V
D
C
Linear Derating Factor
1.0
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
520
mJ
A
AS
I
-21
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
12.5
3.4
mJ
V/ns
AR
dv/dt
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
For footnotes refer to the last page
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1
06/13/01
IRF5M5210
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-100
—
—
—
—
V
V
= 0V, I = -250µA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.12
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.07
Ω
V
= -10V, I = -21A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
10
—
—
—
—
—
-4.0
—
V
V
= V , I = -250µA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
= -15V, I
= -21A ➀
DS
I
-25
-250
V
= -100V ,V =0V
DSS
DS GS
µA
—
V
= -80V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
180
25
100
28
V
V
= -20V
= 20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
=-10V, I = -21A
g
gs
gd
d(on)
r
GS
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
V
= -80V
DS
t
t
t
t
V
DD
V
= -50V, I = -21A,
D
150
100
120
—
=-10V, R = 2.5Ω
GS G
ns
d(off)
f
L
+ L
Total Inductance
Measured from drain lead (6mm /
0.25in. from package ) to source
lead (6mm/0.25in. from pacakge
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
—
—
—
2730
824
—
—
—
V
= 0V, V
= -25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Reverse Transfer Capacitance
465
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-34
-136
-1.6
260
1.8
S
A
SM
V
t
V
ns
T = 25°C, I = -21A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = -21A, di/dt ≥ 100A/µs
j
F
Q
Reverse Recovery Charge
µC
V
≤ -30V ➀
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.0
°C/W
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRF5M5210
1000
100
10
1000
100
10
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
TOP
BOTTOM -4.5V
BOTTOM -4.5V
-4.5V
-4.5V
1
1
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
-34A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
= -50V
V
DS
V
= -10V
GS
20µs PULSE WIDTH
1
-60 -40 -20
0
20 40 60 80 100 120 140 160
4
6
8
10 12
°
T , Junction Temperature( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRF5M5210
6000
5000
4000
3000
2000
1000
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= -21A
GS
C
= C + C
iss
gs
gd ,
V
V
V
=-80V
=-50V
=-20V
C
= C
DS
DS
DS
rss
gd
C
= C + C
gd
oss
ds
C
iss
C
C
oss
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
10
100
0
40
80
120
160
200
240
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
°
T = 150 C
J
°
T = 25 C
J
1
ms
1
Tc = 25°C
Tj = 150°C
1
0ms
Single Pulse
V
= 0 V
GS
0.1
0.2
0.8
1.4
2.0
2.6
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRF5M5210
35
30
25
20
15
10
5
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
90%
V
Fig 9. Maximum Drain Current Vs.
DS
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
t
1
t
2
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF5M5210
1200
1000
800
600
400
200
0
L
I
D
-9.4A
V
DS
TOP
-13.3A
BOTTOM -21A
D.U.T
R
G
V
DD
A
I
AS
DRIVER
-
VGS
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
I
AS
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
-12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF5M5210
Footnotes:
Repetitive Rating; Pulse width limited by
I
≤ - 21A, di/dt ≤ - 400 A/µs,
SD
maximum junction temperature.
V
≤ -100V, T ≤ 150°C
J
DD
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
V
= -25 V, Starting T = 25°C, L= 2.4mH
J
DD
Peak I
= -21A, V
= -10V, R = 25Ω
AS
GS
G
Case Outline and Dimensions —TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
3.78 [.149]
3.53 [.139]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
A
20.32 [.800]
20.07 [.790]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
17.40 [.685]
16.89 [.665]
13.84 [.545]
13.59 [.535]
22.73 [.895]
21.21 [.835]
B
13.84 [.545]
13.59 [.535]
R 1.52 [.060]
1
2
3
31.40 [1.235]
30.35 [1.195]
1
2
3
B
17.40 [.685]
16.89 [.665]
4.06 [.160]
3.56 [.140]
4.82 [.190]
3.81 [.150]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
3X
0.36 [.014]
B A
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
NOT ES :
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER AS ME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
4. CONFORMS TO JEDEC OUT LINE T O-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/01
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7
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