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IRF5Y540CM_15 [INFINEON]

Avalanche Energy Ratings;
IRF5Y540CM_15
型号： IRF5Y540CM_15
厂家： Infineon    Infineon
描述：

Avalanche Energy Ratings
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PD - 94349A  
HEXFET® POWER MOSFET  
THRU-HOLE (TO-257AA)  
IRF5Y31N20  
200V, N-CHANNEL  
Product Summary  
Part Number  
BV  
RDS(on)  
ID  
DSS  
IRF5Y31N20  
200V  
0.092Ω 18A*  
Fifth Generation HEXFET® power MOSFETs from  
International Rectifier utilize advanced processing  
techniquestoachievethelowestpossibleon-resistance  
per silicon unit area. This benefit, combined with the  
fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for,  
providesthedesignerwithanextremelyefficientdevice  
for use in a wide variety of applications.  
TO-257AA  
Features:  
n
n
n
n
n
n
n
Low RDS(on)  
Avalanche Energy Ratings  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Light Weight  
These devices are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy pulse  
circuits.  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
18*  
14  
D
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
72  
DM  
@ T = 25°C  
P
100  
W
W/°C  
V
D
C
Linear Derating Factor  
0.8  
V
Gate-to-Source Voltage  
±20  
170  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
mJ  
A
AS  
I
18  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
10  
mJ  
V/ns  
AR  
dv/dt  
1.7  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10s)  
4.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
01/07/02  
IRF5Y31N20  
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
BV  
DSS  
Drain-to-Source Breakdown Voltage  
200  
—
—
—
—
V
V
= 0V, I = 250µA  
D
GS  
V/°C Reference to 25°C, I = 1.0mA  
∆BV  
/∆T Temperature Coefficient of Breakdown  
0.27  
DSS  
J
D
Voltage  
R
Static Drain-to-Source On-State  
Resistance  
—
—
0.092  
Ω
V
= 10V, I = 14A  
GS D  
DS(on)  
➀
V
Gate Threshold Voltage  
Forward Transconductance  
Zero Gate Voltage Drain Current  
3.0  
14  
—
—
—
—
—
5.5  
—
V
V
V
= V , I = 250µA  
GS(th)  
fs  
DS  
DS  
GS  
D
Ω
g
S ( )  
=15V, I  
= 14A ➀  
DS  
I
25  
250  
V
= 200V ,V =0V  
DSS  
DS GS  
µA  
—
V
= 160V,  
DS  
= 0V, T =125°C  
V
GS  
J
I
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8  
100  
-100  
100  
32  
V
= 20V  
= -20V  
GSS  
GSS  
GS  
nA  
nC  
V
GS  
Q
Q
Q
V
=10V, I = 18A  
g
gs  
gd  
d(on)  
r
GS  
D
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
FallTime  
V
= 160V  
DS  
46  
t
t
t
t
30  
V
DD  
= 100V, I = 18A,  
D
148  
50  
V
= 10V, R = 2.5Ω  
GS G  
ns  
d(off)  
27  
f
L
+ L  
Total Inductance  
—
Measured from drain lead (6mm /  
0.25in. from package ) to source  
lead (6mm/0.25in. from pacakge  
S
D
nH  
l C  
C
Input Capacitance  
—
—
—
2480  
370  
73  
—
—
—
V
= 0V, V  
= 25V  
iss  
GS  
DS  
f = 1.0MHz  
Output Capacitance  
pF  
oss  
rss  
C
Reverse Transfer Capacitance  
Source-Drain Diode Ratings and Characteristics  
Parameter  
Min Typ Max Units  
Test Conditions  
I
I
Continuous Source Current (Body Diode)  
Pulse Source Current (Body Diode) ➀  
Diode Forward Voltage  
—
—
—
—
—
—
—
—
—
—
18*  
72  
S
A
SM  
V
t
1.3  
300  
2.3  
V
ns  
T = 25°C, I = 18A, V  
= 0V ➀  
j
SD  
rr  
S
GS  
Reverse Recovery Time  
T = 25°C, I = 18A, di/dt ≤ 100A/µs  
j
F
Q
Reverse Recovery Charge  
µC  
V
DD  
≤ 25V ➀  
RR  
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .  
S D  
on  
* Current is limited by package  
Thermal Resistance  
Parameter  
Min Typ Max Units  
Test Conditions  
R
Junction-to-Case  
—
—
1.25  
°C/W  
thJC  
Note: Corresponding Spice and Saber models are available on the G&S Website.  
For footnotes refer to the last page  
2
www.irf.com  
IRF5Y31N20  
100  
10  
1
100  
10  
1
VGS  
15V  
12V  
10V  
VGS  
15V  
12V  
10V  
TOP  
TOP  
8.0V  
8.0V  
7.5V  
7.0V  
6.5V  
7.5V  
7.0V  
6.5V  
BOTTOM 6.0V  
BOTTOM 6.0V  
6.0V  
6.0V  
20µs PULSE WIDTH  
20µs PULSE WIDTH,T = 25°C  
Tj = 150°C  
J
0.1  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.5  
100  
10  
1
18A  
=
I
D
2.0  
1.5  
1.0  
0.5  
0.0  
°
T = 150 C  
J
°
T = 25 C  
J
= 50V  
20µs PULSE WIDTH  
V
DS  
V
= 10V  
GS  
0.1  
6.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
6.5  
7.0  
7.5 8.0  
°
T , Junction Temperature( C)  
J
V
, Gate-to-Source Voltage (V)  
GS  
Fig 4. Normalized On-Resistance  
Fig 3. Typical Transfer Characteristics  
Vs.Temperature  
www.irf.com  
3
IRF5Y31N20  
4000  
3000  
2000  
1000  
20  
16  
12  
8
V
= 0V,  
f = 1MHz  
C SHORTED  
ds  
I
D
= 18A  
GS  
V
V
V
= 160V  
= 100V  
= 40V  
DS  
DS  
DS  
C
= C + C  
iss  
gs  
gd ,  
C
= C  
rss  
gd  
C
= C + C  
gd  
oss  
ds  
C
iss  
C
oss  
4
C
rss  
FOR TEST CIRCUIT  
SEE FIGURE 13  
0
1
0
10  
100  
0
20  
40  
60  
80  
100  
V
, Drain-to-Source Voltage (V)  
Q
, Total Gate Charge (nC)  
DS  
G
Fig 5. Typical Capacitance Vs.  
Fig 6. Typical Gate Charge Vs.  
Drain-to-SourceVoltage  
Gate-to-SourceVoltage  
100  
10  
1
1000  
OPERATION IN THIS AREA  
T
= 150°C  
LIMITED BY R (on)  
J
DS  
100  
10  
1
100µs  
T
= 25°C  
J
1ms  
Tc = 25°C  
Tj = 150°C  
Single Pulse  
10ms  
V
= 0V  
1.6  
GS  
0.1  
0.1  
1
10  
100  
1000  
0.0  
0.4  
0.8  
1.2  
2.0  
V
, Drain-toSource Voltage (V)  
V
, Source-to-Drain Voltage ( V )  
DS  
SD  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
ForwardVoltage  
4
www.irf.com  
IRF5Y31N20  
RD  
24  
20  
16  
12  
8
VDS  
LIMITED BY PACKAGE  
VGS  
D.U.T.  
RG  
+VDD  
-
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
4
V
DS  
90%  
0
25  
50  
T
75  
100  
125  
150  
°
, Case Temperature ( C)  
C
10%  
V
GS  
Fig 9. Maximum Drain Current Vs.  
t
t
r
t
t
f
d(on)  
d(off)  
CaseTemperature  
Fig 10b. Switching Time Waveforms  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
P
DM  
0.1  
t
1
0.02  
0.01  
t
2
SINGLE PULSE  
(THERMAL RESPONSE)  
Notes:  
1. Duty factor D = t / t  
1
2
2. Peak T = P  
x Z  
+ T  
C
J
DM  
thJC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
5
IRF5Y31N20  
400  
300  
200  
100  
0
I
D
TOP  
8.0A  
11.4A  
BOTTOM 18A  
15V  
DRIVER  
L
V
D S  
D.U.T  
AS  
.
R
G
+
V
D D  
-
I
A
V
2
GS  
t
0.01  
Ω
p
Fig 12a. Unclamped Inductive Test Circuit  
25  
50  
75  
100  
125  
150  
°
Starting T , Junction Temperature( C)  
V
(BR )D SS  
J
t
p
Fig 12c. Maximum Avalanche Energy  
Vs. DrainCurrent  
I
AS  
Current Regulator  
Fig 12b. Unclamped Inductive Waveforms  
Same Type as D.U.T.  
50KΩ  
.2µF  
12V  
.3µF  
Q
G
+
V
10V  
DS  
D.U.T.  
-
Q
Q
GD  
GS  
V
GS  
V
3mA  
G
I
I
D
G
Current Sampling Resistors  
Charge  
Fig 13b. Gate Charge Test Circuit  
Fig 13a. Basic Gate Charge Waveform  
6
www.irf.com  
IRF5Y31N20  
Footnotes:  
 Repetitive Rating; Pulse width limited by  
ƒ I  
≤ 18A, di/dt ≤ 100 A/µs,  
SD  
maximum junction temperature.  
V
≤ 200V, T ≤ 150°C  
J
DD  
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%  
‚ V  
= 25 V, Starting T = 25°C, L= 1.0 mH  
J
DD  
Peak I  
= 18A, V  
=10V, R = 25Ω  
AS  
GS  
G
Case Outline and Dimensions —TO-257AA  
0.13 [.005]  
A
5.08 [.200]  
4.83 [.190]  
3.81 [.150]  
3.56 [.140]  
10.66 [.420]  
10.42 [.410]  
3X Ø  
1.14 [.045]  
0.89 [.035]  
16.89 [.665]  
16.39 [.645]  
13.63 [.537]  
13.39 [.527]  
B
10.92 [.430]  
10.42 [.410]  
1
2
3
0.71 [.028]  
MAX.  
C
15.88 [.625]  
12.70 [.500]  
2.54 [.100]  
2X  
0.88 [.035]  
0.64 [.025]  
3X Ø  
3.05 [.120]  
Ø 0.50 [.020]  
C
A
B
P IN AS S IG NMENTS  
NOTES :  
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.  
2. CONTROLLING DIMENSION: INCH.  
1
2
3
=
=
=
GATE  
DRAIN  
SOURCE  
3. DIME NS IONS ARE S HOWN IN MIL L IME T E RS [INCHE S ].  
4. OUTLINE CONFORMS TO JEDEC OUTLINE TO-257AA.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.  
Data and specifications subject to change without notice. 01/02  
www.irf.com  
7

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