IRF6217PBF-1_15 [INFINEON]

Industry-standard pinout SO-8 Package;


型号：	IRF6217PBF-1_15
厂家：	Infineon
描述：	Industry-standard pinout SO-8 Package
文件：	总8页 (文件大小：200K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF6217PbF-1

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= -10V)

Q_{g (typical)}

I_D

-150

2.4

-0.7

(@T_A= 25°C)

SO-8

Top View

Features

Industry-standard pinout SO-8 Package

Benefits

Multi-Vendor Compatibility

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial qualification

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube/Bulk

Tape and Reel

4000

IRF6217PbF-1

IRF6217TRPbF-1

IRF6217PbF-1

SO-8

Absolute Maximum Ratings

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

-0.7

-0.5

-5.0

2.5

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

P_D@T_A= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.02

± 20

4.5

V_GS

dv/dt

T_J

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

Notes through are on page 8

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IRF6217PbF-1

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

-150 ––– –––

Conditions

V_GS= 0V, I_D= -250μA

V_(BR)DSS

ΔV_(BR)DSS/ΔT_JBreakdown Voltage Temp. Coefficient

––– -0.17 ––– V/°C Reference to 25°C, I_D= -1mA

R_DS(on)

V_GS(th)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

––– ––– 2.4

-3.0 ––– -5.0

––– ––– -25

––– ––– -250

––– ––– -100

––– ––– 100

V_GS= -10V, I_D= -0.42A

V_DS= V_GS, I_D= -250μA

V_DS= -150V, V_GS= 0V, T_J= 25°C

V_DS= -120V, V_GS= 0V, T_J= 125°C

I_DSS

Drain-to-Source Leakage Current

μA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

V_GS= -20V

I_GSS

V_GS= 20V

Dynamic @ T_J= 25°C (unless otherwise specified)

Parameter

Forward Transconductance

Total Gate Charge

Min. Typ. Max. Units

Conditions

g_fs

0.55 ––– –––

––– 6.0 9.0

V_DS= -50V, I_D= -0.42A

I_D= -0.42A

Q_g

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

–––

1.6 2.4

2.8 4.2

12 –––

7.2 –––

14 –––

16 –––

nC V_DS= -120V

V_GS= -10V,

V_DD= -75V

I_D= -0.42A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 6.2Ω

V_GS= -10V

V_GS= 0V

C_iss

C_oss

C_rss

C_oss

C_osseff.

Input Capacitance

––– 150 –––

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

–––

30 –––

10 –––

V_DS= -25V

ƒ = 1.0KHz

––– 150 –––

V_GS= 0V, V_DS= -1.0V, ƒ = 1.0KHz

V_GS= 0V, V_DS= -120V, ƒ = 1.0KHz

V_GS= 0V, V_DS= 0V to -120V

–––

15 –––

45 –––

Avalanche Characteristics

Parameter

Single Pulse Avalanche Energy

Typ.

–––

Max.

Units

E_AS

I_AR

Avalanche Current

–––

-1.4

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

(Body Diode)

MOSFET symbol

-1.8

-5.0

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

––– ––– -1.6

––– 51 77

––– 86 130

T_J= 25°C, I_S= -0.42A, V_GS= 0V

T_J= 25°C, I_F= -0.42A

Q_rr

nC di/dt = -100A/μs

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IRF6217PbF-1

VGS

TOP

-15V

-12V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

TOP

-15V

-12V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

BOTTOM

-5.0V

0.1

-5.0V

20μs PULSE WIDTH

T = 150

T = 25

0.01

0.1

100

0.1

100

-V , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.5

-0.70A

2.0

1.5

1.0

0.5

0.0

T = 25

T = 150

0.1

= -50V

20μs PULSE WIDTH

= -10V

0.01

-60 -40 -20

80 100 120 140 160

T , Junction Temperature

( C)

-V , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF6217PbF-1

10000

1000

100

= 0V,

f = 1 MHZ

-0.42A

= -120V

= -75V

= -30V

= C + C

SHORTED

iss

= C

rss

= C + C

oss

Ciss

Coss

Crss

100

1000

, Total Gate Charge (nC)

-V , Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

OPERATION IN THIS AREA

LIMITED BY R (on)

T = 150

100μsec

1msec

0.1

0.01

10msec

T = 25

Tc = 25°C

Tj = 150°C

Single Pulse

= 0 V

0.1

0.2

0.6

0.9

1.3

1.6

100

1000

-V ,Source-to-Drain Voltage (V)

-V

, Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRF6217PbF-1

1.0

0.8

0.6

0.4

0.2

0.0

R_D

V_DS

V_GS

D.U.T.

R_G

V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Case Temperature

(

10%

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

d(on)

d(off)

Fig 10b. Switching Time Waveforms

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

/ t

2. Peak T

= P

+ T

thJA

0.1

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF6217PbF-1

1.94

1.92

1.90

1.88

1.86

1.84

1.82

1.80

9.00

8.00

7.00

6.00

5.00

4.00

3.00

2.00

1.00

= -10V

= -0.7A

0.00

0.25

0.50

0.75

1.00

1.25

1.50

4.5

6.0

-V

7.5

9.0

10.5

12.0

13.5

15.0

Gate -to -Source Voltage (V)

-I , Drain Current (A)

GS,

Fig 12. On-Resistance Vs. Drain Current

Fig 13. On-Resistance Vs. Gate Voltage

Current Regulator

Same Type as D.U.T.

-V_GS

50KΩ

.3μF

.2μF

12V

D.U.T.

TOP

-0.6A

-1.1A

-1.4A

Charge

-3mA

BOTTOM

Current Sampling Resistors

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

D.U.T

DRIVER

-20V

0.01

100

125

150

( C)

Starting Tj, Junction Temperature

15V

(BR)DSS

Fig 15c. Maximum Avalanche Energy

Fig 15a&b. Unclamped Inductive Test circuit

Vs. Drain Current

and Waveforms

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IRF6217PbF-1

SO-8 Package Outline(Mosfet & Fetky)

Dimensions are shown in milimeters (inches)

INCHES

MILLIMETERS

DIM

MIN

.0532

A1 .0040

MAX

.0688

.0098

.020

MIN

1.35

0.10

0.33

0.19

4.80

3.80

MAX

1.75

0.25

0.51

0.25

5.00

4.00

.013

.0075

.189

.0098

.1968

.1574

0.25 [.010]

.1497

.050 BASIC

1.27 BASIC

e1 .025 BASIC

0.635 BASIC

.2284

.0099

.016

0°

.2440

.0196

.050

8°

5.80

0.25

0.40

0°

6.20

0.50

1.27

8°

K x 45°

0.10 [.004]

8X c

8X L

8X b

0.25 [.010]

FOOTPRINT

NOTES:

1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.

2. CONTROLLINGDIMENSION: MILLIMETER

8X 0.72 [.028]

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OU T L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.

DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

6.46 [.255]

DIMENSION IS THE LENGT H OF LEAD FOR SOLDERING TO

ASUBSTRATE.

3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking Information

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

DAT E CODE (YWW)

P = DISGNATES LEAD - FREE

PRODUCT (OPTIONAL)

Y = LAST DIGIT OF THE YEAR

WW = WEE K

A = AS S E MB L Y S IT E CODE

XXXX

F7101

INTERNATIONAL

RECTIFIER

LOGO

LOT CODE

PART NUMBER

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRF6217PbF-1

SO-8 Tape and Reel (Dimensions are shown in millimeters (inches))

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 15mH, R_G= 25Ω, I_AS= -1.4A.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board.

Qualification information^†

Industrial

(per JEDEC JESD47F^††guidelines)

Qualification level

MS L 1

Moisture Sensitivity Level

RoHS compliant

SO-8

(per JEDEC J-S TD-020D^††

Yes

)

†

Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability

†† Applicable version of JEDEC standard at the time of product release

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visithttp://www.irf.com/whoto-call/

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IRF6217PBF-1_15 [INFINEON]

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