IRF630NSPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF630NSPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总11页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95047
IRF630NPbF
IRF630NSPbF
IRF630NLPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
l Lead-Free
RDS(on) = 0.30Ω
G
Description
ID = 9.3A
Fifth Generation HEXFET® Power MOSFETs from
S
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrialapplicationsatpowerdissipationlevels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
D2Pak
IRF630NSPbF IRF630NLPbF
TO-262
TO-220AB
IRF630NPbF
The through-hole version (IRF630NL) is available for low-
profile application.
Absolute Maximum Ratings
Parameter
Max.
9.3
6.5
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
37
PD @TC = 25°C
Power Dissipation
82
W
W/°C
V
Linear Derating Factor
0.5
VGS
EAS
IAR
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy
Avalanche Current
94
mJ
A
9.3
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
8.2
mJ
V/ns
8.1
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
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1
2/25/04
IRF630NPbF/SPbF/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.30
Ω
V
S
VGS = 10V, ID = 5.4A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 5.4A
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 20V
2.0
4.9
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 35
––– ––– 6.5
––– ––– 17
IDSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
nA
VGS = -20V
Qg
ID = 5.4A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 160V
VGS = 10V
VDD = 100V
–––
–––
–––
–––
7.9 –––
14 –––
27 –––
15 –––
ID = 5.4A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 13Ω
RD = 18Ω
D
S
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5 –––
nH
pF
G
–––
7.5
Ciss
Coss
Crss
Input Capacitance
––– 575 –––
Output Capacitance
–––
–––
89 –––
25 –––
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
9.3
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 37
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 117 176
––– 542 813
V
TJ = 25°C, IS = 5.4A, VGS = 0V
TJ = 25°C, IF = 5.4A
ns
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
1.83
–––
62
Units
RθJC
RθCS
RθJA
RθJA
°C/W
Junction-to-Ambient (PCB mount)ꢀ
–––
40
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2
IRF630NPbF/SPbF/LPbF
100
10
1
100
10
VGS
VGS
15V
TOP
15V
10V
TOP
10V
8.0V
8.0V
7.0V
6.0V
5.5V
5.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM4.5V
1
4.5V
4.5V
0.1
0.01
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 175 C
J
°
T = 25 C
J
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1ꢀ Typical Output Characteristics
Fig 2ꢀ Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
9.3A
=
I
D
°
T = 175 C
J
°
T = 25 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
5.0
6.0
7.0
8.0 9.0
10.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4ꢀ Normalized On-Resistance
Fig 3ꢀ Typical Transfer Characteristics
Vsꢀ Temperature
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3
IRF630NPbF/SPbF/LPbF
1200
16
12
8
V
= 0V, f = 1 MHZ
I =
D
5.4A
GS
C
= C + C , C SHORTED
V
V
V
= 160V
= 100V
= 40V
iss
gs gd ds
DS
DS
DS
C
= C
gd
1000
800
600
400
200
0
rss
C
= C + C
oss
ds gd
Ciss
Coss
Crss
4
0
0
5
10
15
20
25
30
1
10
100
1000
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5ꢀ Typical Capacitance Vsꢀ
Fig 6ꢀ Typical Gate Charge Vsꢀ
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 175 C
J
100us
°
T = 25 C
J
1ms
1
10ms
°
T = 25 C
J
C
°
T = 175 C
Single Pulse
V
= 0 V
GS
1.0
0.1
0.1
0.2
0.4
0.6
0.8
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7ꢀ Typical Source-Drain Diode
Fig 8ꢀ Maximum Safe Operating Area
Forward Voltage
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4
IRF630NPbF/SPbF/LPbF
RD
VDS
12
VGS
DꢀUꢀTꢀ
RG
+
-
VDD
9
6
3
0
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10aꢀ Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
10%
V
GS
T , Case Temperature( C)
C
t
t
r
t
t
f
d(on)
d(off)
Fig 9ꢀ Maximum Drain Current Vsꢀ
Fig 10bꢀ Switching Time Waveforms
Case Temperature
10
D = 0.50
0.20
1
0.10
0.05
P
2
DM
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11ꢀ Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF630NPbF/SPbF/LPbF
200
150
100
50
I
D
15V
TOP
2.2A
3.8A
BOTTOM 5.4A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12aꢀ Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12cꢀ Maximum Avalanche Energy
Vsꢀ Drain Current
I
AS
Fig 12bꢀ Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13bꢀ Gate Charge Test Circuit
Fig 13aꢀ Basic Gate Charge Waveform
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IRF630NPbF/SPbF/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
DꢀUꢀT
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as DꢀUꢀTꢀ
• ISD controlled by Duty Factor "D"
• DꢀUꢀTꢀ - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14ꢀ For N-Channel HEXFET® Power MOSFETs
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IRF630NPbF/SPbF/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
AS S EMB LED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
INTE RNAT IONAL
RECT IFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 7 = 1997
WEEK 19
AS S EMBLY
LOT CODE
LINE C
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8
IRF630NPbF/SPbF/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530S WIT H
P AR T N U MB E R
L OT CODE 8024
IN T E R N AT IONAL
R E CT IF IE R
L OGO
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB L Y L INE "L "
F 530S
DAT E CODE
YE AR 0 = 2000
WE E K 02
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
L OT CODE
L INE
L
OR
P AR T N U MB E R
IN T E R N AT ION AL
R E CT IF IE R
L OGO
F 530S
D AT E COD E
P
=
D E S IGN AT E S L E AD -F R E E
P R OD U CT (OP T ION AL )
AS S E MB L Y
L OT COD E
YE AR
W E E K 02
A = AS S E MB L Y S IT E COD E
0 = 2000
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9
IRF630NPbF/SPbF/LPbF
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
E XAMPLE : THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
LOGO
DATE CODE
YEAR 7 = 1997
WE EK 19
Note: "P" in assembly line
pos ition indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
AS S E MBL Y
LOT CODE
WEE K 19
A = AS S E MB L Y S IT E CODE
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10
IRF630NPbF/SPbF/LPbF
D2Pak Tape & Reel Infomation
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
This is only applied to TO-220AB package.
Starting TJ = 25°C, L = 6.5mH
RG = 25Ω, IAS = 5.4A.
ꢀ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD ≤ 5.4A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/04
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11
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INFINEON
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