IRF630NSTRR [INFINEON]
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 200V V（ BR ） DSS | 9.3AI （D ） | TO- 263AB\n
| 型号： | IRF630NSTRR |
| 厂家： | 
Infineon |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB
|
| 文件： | 总11页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94005A
IRF630N
IRF630NS
IRF630NL
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
RDS(on) = 0.30Ω
G
l Simple Drive Requirements
Description
ID = 9.3A
Fifth Generation HEXFET® Power MOSFETs from
S
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrialapplicationsatpowerdissipationlevels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
D2Pak
IRF630NS
TO-262
IRF630NL
TO-220AB
IRF630N
The through-hole version (IRF630NL) is available for low-
profile application.
Absolute Maximum Ratings
Parameter
Max.
9.3
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
6.5
A
37
PD @TC = 25°C
Power Dissipation
82
W
W/°C
V
Linear Derating Factor
0.5
VGS
EAS
IAR
Gate-to-Source Voltage
±20
94
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
9.3
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
8.2
mJ
V/ns
8.1
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
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1
10/11/00
IRF630N/S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.30
Ω
V
S
VGS = 10V, ID = 5.4A
VDS = VGS, ID = 250µA
2.0
4.9
––– 4.0
––– –––
Forward Transconductance
VDS = 50V, ID = 5.4A
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 20V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 35
––– ––– 6.5
––– ––– 17
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 5.4A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 160V
VGS = 10V
VDD = 100V
–––
–––
–––
–––
7.9 –––
14 –––
27 –––
15 –––
ID = 5.4A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 13Ω
RD = 18Ω
D
Between lead,
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5 –––
6mm (0.25in.)
nH
G
from package
–––
7.5
and center of die contact
S
Ciss
Coss
Crss
Input Capacitance
––– 575 –––
VGS = 0V
Output Capacitance
–––
–––
89 –––
25 –––
VDS = 25V
ƒ = 1.0MHz
Reverse Transfer Capacitance
pF
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
9.3
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– 37
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 117 176
––– 542 813
V
TJ = 25°C, IS = 5.4A, VGS = 0V
TJ = 25°C, IF = 5.4A
ns
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.83
–––
62
Units
RθJC
RθCS
RθJA
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
Junction-to-Ambient (PCB mount)ꢀ
–––
40
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2
IRF630N/S/L
100
10
1
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
BOTTOM 4.5V
1
4.5V
4.5V
0.1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 175 C
J
T = 25 C
J
0.01
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
9.3A
=
I
D
°
T = 175 C
J
°
T = 25 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
5.0
6.0
7.0
8.0 9.0 10.0
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRF630N/S/L
1200
16
12
8
V
= 0V, f = 1 MHZ
= C + C , C SHORTED
I
D
=
5.4A
GS
C
V
V
V
= 160V
= 100V
= 40V
iss gs gd ds
DS
DS
DS
C
= C
gd
1000
800
600
400
200
0
rss
C
= C + C
oss
ds gd
Ciss
Coss
Crss
4
0
0
5
10
15
20
25
30
1
10
100
1000
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 175 C
J
100us
°
T = 25 C
J
1ms
1
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
0.1
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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4
IRF630N/S/L
RD
VDS
12
9
VGS
10V
D.U.T.
RG
+
VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
V
3
DS
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
10%
T
C
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
0.20
1
0.10
0.05
P
2
DM
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF630N/S/L
200
150
100
50
I
D
15V
TOP
2.2A
3.8A
BOTTOM 5.4A
D RIVER
L
V
D S
D .U .T
R
+
G
V
D D
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR )D SS
t
p
0
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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6
IRF630N/S/L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
-
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRF630N/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIG NMENTS
1 - GATE
1
2
3
2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B
A
M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIO NING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIM ENSION : INCH
3
4
O UTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LE AD MEASUREM ENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE : THIS IS AN IRF1010
W ITH ASSEMBLY
A
INTERNATIONAL
RECTIFIER
PART NUM BER
LOT CODE 9B1M
IRF1010
9246
LOGO
9B
1M
DATE CODE
(YYW W )
ASSEMBLY
LOT
CODE
YY
=
YEAR
= W EEK
W W
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8
IRF630N/S/L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
1.32 (.052)
1.22 (.048)
M AX.
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LE AD ASSIGNM ENTS
1 - GATE
NO TES:
1
2
3
4
DIM ENS IO NS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
DIM ENS IO NING & TOLERANCING PER ANSI Y14.5M , 1982.
CONTRO LLING DIMENSION : INCH.
3 - SOURCE
HEATSINK & LEAD DIM ENSIONS DO N OT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
D2Pak Part Marking Information
A
INTERNATIO NAL
RECTIFIER
PART NUMB ER
F530S
LOGO
9246
1M
DATE CODE
(YYW W )
9B
A SSEM BLY
YY
=
YEAR
= W EEK
LOT
CODE
W W
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9
IRF630N/S/L
TO-262 Package Outline
TO-262 Part Marking Information
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10
IRF630N/S/L
D2Pak Tape & Reel Information
TR R
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FE ED D IR E CTIO N
TR L
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEE D D IRE C TIO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX.
60.00 (2.362)
MIN.
30.40 (1.197)
M AX.
NOTES
1. COM FORM S TO EIA-418.
2. CONTRO LLING DIM ENSION: M ILLIM ETER.
3. DIM ENSION MEASURED
:
26.40 (1.039)
24.40 (.961)
4
@ HUB.
3
4. INCLUDES FLANG E DISTORTION
@
O UTER EDGE.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is only applied to TO-220AB package.
max. junction temperature.
Starting TJ = 25°C, L = 6.5mH
R
G = 25Ω, IAS = 5.4A.
ꢀThis is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD ≤ 5.4A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
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11
相关型号：
IRF630NSTRRPBF
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRF630S
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
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