IRF630S [VISHAY]
Power MOSFET; 功率MOSFET
| 型号： | IRF630S |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总9页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF630S, SiHF630S
Vishay Siliconix
Power MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
PRODUCT SUMMARY
VDS (V)
200
R
DS(on) ()
VGS = 10 V
0.40
Qg (Max.) (nC)
43
7.0
Q
Q
gs (nC)
gd (nC)
23
Configuration
Single
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
D
D2PAK (TO-263)
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
D2PAK (TO-263)
SiHF630S-GE3
IRF630SPbF
D2PAK (TO-263)
SiHF630STRL-GE3a
IRF630STRLPbFa
SiHF630STL-E3a
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF630STRR-GE3a
IRF630STRRPbFa
SiHF630STR-E3a
Lead (Pb)-free
SiHF630S-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
200
20
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
TC = 25 °C
C = 100 °C
9.0
Continuous Drain Current
VGS at 10 V
ID
T
5.7
36
A
Pulsed Drain Currenta
IDM
Linear Derating Factor
0.59
0.025
250
9.0
W/°C
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
EAS
IAR
mJ
A
EAR
7.4
mJ
T
C = 25 °C
74
PD
W
TA = 25 °C
3.0
* Pb containing terminations are not RoHS compliant, exemptions may apply
Peak Diode Recovery dV/dtc
dV/dt
5.0
V/ns
Document Number: 91032
S11-1047-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
- 55 to + 150
300d
UNIT
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 , IAS = 9.0 A (see fig. 12).
c. ISD 9.0 A, dI/dt 120 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
(PCB Mount)c
RthJA
-
-
40
°C/W
-
-
-
-
62
Maximum Junction-to-Ambient
RthJA
RthJC
Maximum Junction-to-Case (Drain)
1.7
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VDS/TJ
VGS(th)
IGSS
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
200
-
-
-
V
V/°C
V
-
2.0
-
0.24
-
-
-
-
-
-
4.0
100
25
250
0.40
-
VGS
=
20 V
nA
VDS = 200 V, VGS = 0 V
-
Zero Gate Voltage Drain Current
IDSS
μA
V
DS = 160V, VGS = 0 V, TJ = 125 °C
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
VGS = 10 V
VDS = 50 V, ID = 5.4 Ab
ID = 5.4 Ab
-
3.8
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
800
240
76
-
-
-
VGS = 0 V,
DS = 25 V,
f = 1.0 MHz, see fig. 5
V
pF
nC
-
43
7.0
23
-
ID = 5.9 A, VDS = 160 V
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
V
GS = 10 V
-
-
9.4
28
39
20
VDD = 100 V, ID = 5.9 A
-
Rg = 12 , RD= 16
ns
see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
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Document Number: 91032
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
-
-
-
-
9.0
A
G
ISM
36
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 9.0 A, VGS = 0 Vb
-
-
-
-
2.0
340
2.2
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
170
1.1
ns
μC
TJ = 25 °C, IF = 5.9 A,
dI/dt = 100 A/μsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 or G-10 material).
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
VGS
VGS
Top
Top
15 V
15 V
10 V
10 V
8.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
101
100
10-1
7.0 V
6.0 V
101
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
Bottom
100
4.5 V
20 µs Pulse Width
TC = 25 °C
20 µs Pulse Width
TC = 150 °C
10-1
100
101
100
101
10-1
10-1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
91032_01
91032_02
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91032
S11-1047-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
1600
1200
800
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
101
Coss = Cds + Cgd
150 °C
Ciss
25 °C
100
Coss
Crss
400
0
20 µs Pulse Width
DS = 50 V
10-1
V
100
101
4
5
6
7
8
9
10
VDS
,
Drain-to-Source Voltage (V)
91032_03
VGS, Gate-to-Source Voltage (V)
91032_05
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
ID = 5.9 A
ID = 5.9 A
VGS = 10 V
V
DS = 160 V
DS = 100 V
DS = 40 V
16
V
V
12
8
4
For test circuit
see figure 13
0
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
0
20
50
10
30
40
TJ, Junction Temperature (°C)
91032_04
91032_06
QG, Total Gate Charge (nC)
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Document Number: 91032
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
10
8
101
150 °C
6
4
25 °C
100
2
0
VGS = 0 V
1.3 1.5
25
50
75
100
125
150
0.5
0.7
0.9
1.1
VSD, Source-to-Drain Voltage (V)
TC, Case Temperature (°C)
91032_07
91032_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 7 - Typical Source-Drain Diode Forward Voltage
RD
VDS
VGS
D.U.T.
103
5
Rg
Operation in this area limited
+
by RDS(on)
V
DD
-
2
102
10 V
5
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
10 µs
2
10
5
100 µs
1 ms
Fig. 10a - Switching Time Test Circuit
2
10 ms
1
VDS
5
TC = 25 °C
TJ = 150 °C
Single Pulse
90 %
2
0.1
2
5
2
5
2
5
2
5
2
5
102
103
0.1
1
10
104
VDS, Drain-to-Source Voltage (V)
10 %
VGS
91032_08
td(on) tr
td(off) tf
Fig. 8 - Maximum Safe Operating Area
Fig. 10b - Switching Time Waveforms
Document Number: 91032
S11-1047-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
10
1
0 − 0.5
0.2
0.1
PDM
0.05
0.1
t1
0.02
0.01
t2
Single Pulse
(Thermal Response)
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
91032_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
VDS
VDS
Vary tp to obtain
required IAS
tp
VDD
Rg
D.U.T.
+
VDD
-
VDS
IAS
10 V
0.01 Ω
tp
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
600
500
400
300
200
100
ID
4.0 A
5.7 A
Top
Bottom 9.0 A
VDD = 50 V
0
125
25
75
100
150
50
91032_12c
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
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Document Number: 91032
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
Current regulator
Same type as D.U.T.
50 kΩ
QG
12 V
0.2 µF
0.3 µF
10 V
+
-
QGS
QGD
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Fig. 13a - Basic Gate Charge Waveform
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
D.U.T.
•
•
•
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-
+
-
-
+
Rg
•
•
dV/dt controlled by Rg
Driver same type as D.U.T.
+
-
VDD
• ISD controlled by duty factor “D”
• D.U.T. - device under test
Driver gate drive
P.W.
P.W.
D =
Period
Period
VGS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91032.
Document Number: 91032
S11-1047-Rev. C, 30-May-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
B
(Datum A)
3
4
A
A
E
c2
H
L1
4
Gauge
plane
0° to 8°
4
B
5
Detail A
Seating plane
D
H
L
C
C
A1
L3
L4
Detail “A”
1
2
3
L2
Rotated 90° CW
B
B
scale 8:1
A
2 x b2
2 x b
c
E
M
M
B
0.010
A
M
0.004
B
2 x e
Base
metal
5
D1
4
Plating
(c)
b1, b3
5
c1
(b, b2)
Lead tip
4
E1
Section B - B and C - C
Scale: none
View A - A
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
A
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
MAX.
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
DIM.
D1
E
MIN.
6.86
MAX.
MIN.
MAX.
-
10.67
-
0.270
0.380
0.245
-
0.420
-
A1
b
9.65
6.22
E1
e
b1
b2
b3
c
2.54 BSC
0.100 BSC
H
14.61
15.88
2.79
1.65
1.78
0.575
0.625
0.110
0.066
0.070
L
1.78
0.070
L1
L2
L3
L4
-
-
-
-
c1
c2
D
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
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Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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