IRF635 [INFINEON]
Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,;
| 型号： | IRF635 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 局域网 脉冲 晶体管 |
| 文件： | 总1页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
IRF635-001PBF
Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF635-002
Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRF635-004PBF
Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF635-005PBF
Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF635-006PBF
Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF635-009
Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF635-010
Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRF635-011
Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF635-012
Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF635-013
Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRF635PBF
Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFINEON
©2020 ICPDF网 联系我们和版权申明