IRF6612TRPBF [INFINEON]
RoHs Compliant; 符合RoHS
| 型号： | IRF6612TRPBF |
| 厂家： | 
Infineon |
| 描述： | RoHs Compliant |
| 文件： | 总10页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97215
IRF6612PbF
IRF661TRPbF
DirectFET™ Power MOSFET ꢂ
Typical values (unless otherwise specified)
ꢀRoHs Compliant ꢁ
ꢀLead-Free (Qualified up to 260°C Reflow)
ꢀApplication Specific MOSFETs
ꢀIdeal for CPU Core DC-DC Converters
ꢀLow Conduction Losses
VDSS
30V max ±20V max
VGS
RDS(on)
2.5mΩ@ 10V 3.4mΩ@ 4.5V
RDS(on)
Qg tot Qgd
30nC
Qgs2
Qrr
Qoss Vgs(th)
10nC
2.9nC 8.1nC
18nC
1.8V
ꢀHigh Cdv/dt Immunity
ꢀLow Profile (<0.7mm)
ꢀDual Sided Cooling Compatible ꢁ
ꢀCompatible with existing Surface Mount Techniques ꢁ
DirectFET™ ISOMETRIC
MX
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6612PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6612PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The
IRF6612PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
Max.
30
Units
V
VDS
Drain-to-Source Voltage
±20
136
24
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V ꢃ
Continuous Drain Current, VGS @ 10V ꢃ
Continuous Drain Current, VGS @ 10V ꢄ
Pulsed Drain Current ꢅ
I
I
I
I
@ TC = 25°C
D
D
D
@ TA = 25°C
@ TA = 70°C
A
19
190
37
DM
EAS
IAR
Single Pulse Avalanche Energy ꢆ
Avalanche Current ꢅ
mJ
A
19
10
9
8
7
6
5
4
3
2
1
0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
I
= 24A
D
I = 19A
D
V
V
= 24V
= 15V
DS
DS
T
= 125°C
J
T
= 25°C
7
J
2
3
4
5
6
8
9
10
0
10
Q
20
30
40
Total Gate Charge (nC)
V
Gate -to -Source Voltage (V)
G
GS,
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
Notes:
ꢁClick on this section to link to the appropriate technical paper.
ꢂClick on this section to link to the DirectFET Website.
ꢃSurface mounted on 1 in. square Cu board, steady state.
www.irf.com
ꢄTC measured with thermocouple mounted to top (Drain) of part.
ꢅRepetitive rating; pulse width limited by max. junction temperature.
ꢆStarting TJ = 25°C, L = 0.20mH, RG = 25Ω, IAS = 19A.
1
05/29/06
IRF6612PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
–––
24
Max.
–––
–––
3.3
Units
V
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
96
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 24A ꢇ
VGS = 4.5V, ID = 19A ꢇ
VDS = VGS, ID = 250µA
∆ΒVDSS/∆TJ
RDS(on)
mV/°C
mΩ
2.5
3.4
1.8
-5.6
–––
–––
–––
–––
–––
30
4.4
VGS(th)
Gate Threshold Voltage
2.25
–––
1.0
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
mV/°C
µA
V
DS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
100
100
-100
–––
45
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
VGS = -20V
V
DS = 15V, ID = 19A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS = 15V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
8.5
2.9
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VGS = 4.5V
ID = 19A
nC
8.6
13
See Fig. 14
VDS = 16V, VGS = 0V
18
nC
ns
VDD = 16V, VGS = 4.5V ꢃ
Turn-On Delay Time
15
I
D = 19A
Rise Time
52
td(off)
tf
Clamped Inductive Load
See Fig. 15 & 16
VGS = 0V
Turn-Off Delay Time
21
Fall Time
4.8
3970
780
360
Ciss
Coss
Crss
Input Capacitance
VDS = 15V
Output Capacitance
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Min.
–––
Typ.
–––
Max.
110
Units
Conditions
MOSFET symbol
showing the
D
S
IS
Continuous Source Current
(Body Diode)
A
G
ISM
integral reverse
Pulsed Source Current
(Body Diode) ꢁ
–––
–––
190
p-n junction diode.
VSD
trr
T = 25°C, I = 19A, V = 0V ꢇ
J S GS
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
19
1.0
29
12
V
T = 25°C, I = 19A
ns
nC
J
F
Qrr
di/dt = 100A/µs ꢇ See Fig. 17
8.1
Notes:
ꢅRepetitive rating; pulse width limited by max. junction temperature.
ꢇPulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com
IRF6612PbF
Absolute Maximum Ratings
2.8
1.8
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation ꢃ
D
D
D
Power Dissipation ꢃ
W
89
Power Dissipation ꢄ
TP
270
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
°C
-40 to + 150
T
T
J
STG
Thermal Resistance
Parameter
Junction-to-Ambient ꢃꢊ
Junction-to-Ambient ꢈꢊ
Typ.
–––
12.5
20
Max.
45
Units
°C/W
W/°C
RθJA
RθJA
–––
–––
1.4
RθJA
Junction-to-Ambient ꢉꢊ
Junction-to-Case ꢄꢊ
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
Linear Derating Factor ꢃ
–––
0.022
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
R1
R1
R2
R2
R3
R4
Ri (°C/W) τi (sec)
R3
R4
τ
1.2801
8.7256
21.750
13.251
0.000322
0.164798
2.25760
69
τ
J τJ
τ
Aτ
τ
1 τ1
τ
τ
0.1
2 τ2
3 τ3
4 τ4
Ci= τi/Ri
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
ꢊR is measured at TJ of approximately 90°C.
ꢈUsed double sided cooling , mounting pad.
ꢉMounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
ꢉMounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
ꢈMounted to a PCB with
small clip heatsink (still air)
ꢃSurface mounted on 1 in. square Cu
(still air).
www.irf.com
IRF6612PbF
10000
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
1000
100
10
BOTTOM
BOTTOM
2.7V
2.7V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
≤
≤
1
1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
100
10
1.5
1.0
0.5
V
= 10V
I
= 25A
D
DS
≤60µs PULSE WIDTH
V
= 10V
GS
T
= 25°C
J
T
= 150°C
J
1
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
1
2
3
4
5
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
100000
V
GS
= 0V,
= C
f = 1 MHZ
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
= C + C
ds
gd
10000
1000
C
iss
C
C
oss
rss
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
www.irf.com
IRF6612PbF
1000.00
100.00
10.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
100µsec
1msec
T
= 25°C
J
1
10msec
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
1.00
0
1
10
100
1000
0.4
0.5
V
0.6
0.7
0.8
0.9
1.0
1.1
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
2.5
140
120
100
80
2.0
1.5
1.0
0.5
0.0
I
= 250µA
D
60
40
20
0
-75 -50 -25
0
25
50
75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
J
, Case Temperature (°C)
C
Fig 12. Threshold Voltage vs. Temperature
Fig 11. Maximum Drain Current vs. Case Temperature
150
I
D
TOP
5.3A
6.2A
125
100
75
50
25
0
BOTTOM 19A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 13. Maximum Avalanche Energy vs. Drain Current
www.irf.com
5
IRF6612PbF
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 14a. Gate Charge Test Circuit
Fig 14b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
V
R
GS
G
V
DD
-
I
A
20V
0.01Ω
t
p
I
AS
Fig 15b. Unclamped Inductive Waveforms
Fig 15a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
td(on)
td(off)
tr
Pulse Width < 1µs
Duty Factor < 0.1%
tf
Fig 16a. Switching Time Test Circuit
Fig 16b. Switching Time Waveforms
6
www.irf.com
IRF6612PbF
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
ꢃ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
ꢂ
-
Reverse
Recovery
Current
Body Diode Forward
- ꢄ
Current
di/dt
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
ꢁ
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Body Diode
Inductor Current
Forward Drop
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET™ Substrate and PCB Layout, MX Outline ꢃ
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
www.irf.com
7
IRF6612PbF
DirectFET™ Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
CODE
MAX
6.35
MIN
MIN
6.25
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.0274
0.0031
0.007
A
B
C
D
E
F
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.0235
0.0008
0.003
4.80 5.05
3.85
0.35
0.68
0.68
1.38
0.80
0.38
3.95
0.45
0.72
0.72
1.42
0.84
0.42
G
H
J
K
L
0.88 1.01
2.28
2.41
M
R
P
0.616 0.676
0.020 0.080
0.08
0.17
DirectFET™ Part Marking
8
www.irf.com
IRF6612PbF
DirectFET™ Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6612TRPBF). For 1000 parts on 7"
reel, order IRF6612TR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MAX
IMPERIAL
CODE
MIN
MIN
MAX
N.C
MIN
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
A
B
C
D
E
F
330.0
20.2
12.8
1.5
12.992
0.795
0.504
0.059
3.937
N.C
177.77
19.06
13.5
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
N.C
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
N.C
58.72
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
IMPERIAL
CODE
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MIN
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/06
www.irf.com
9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
IRF6613PBF
Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
INFINEON
IRF6613TR1
Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3
INFINEON
IRF6613TR1PBF
Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
INFINEON
IRF6614PBF
Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, ISOMETRIC-3
INFINEON
IRF6614TR1PBF
Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, ISOMETRIC-3
INFINEON
©2020 ICPDF网 联系我们和版权申明