IRF6617TRPBF [INFINEON]

Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3;


型号：	IRF6617TRPBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 晶体晶体管功率场效应晶体管开关脉冲
文件：	总8页 (文件大小：170K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 95847

IRF6617

HEXFET^®Power MOSFET

l Application Specific MOSFETs

l Ideal for CPU Core DC-DC Converters

l Low Conduction Losses

V_DSS

30V

R_DS(on)max

Qg(typ.)

8.1m

Ω@V_GS= 10V

11nC

l Low Switching Losses

10.3mΩ@V_GS= 4.5V

l Low Profile (<0.7 mm)

l Dual Sided Cooling Compatible

l Compatible with Existing Surface Mount Techniques

DirectFET ISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)

Description

The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to

achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The

DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and

vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-

turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power

systems, IMPROVING previous best thermal resistance by 80%.

The IRF6617 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the

latest generation of processors operating at higher frequencies. The IRF6617 has been optimized for parameters that are

critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Absolute Maximum Ratings

Max.

Parameter

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

±20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_A= 25°C

@ T_A= 70°C

120

2.1

@T_A= 25°C

@T_A= 70°C

@T_C= 25°C

Power Dissipation

1.4

Power Dissipation

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

0.017

Linear Derating Factor

W/°C

°C

-40 to + 150

Operating Junction and

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

12.5

Max.

Units

R_θ

Junction-to-Ambient

Junction-to-Case

–––

3.0

°C/W

–––

1.0

Junction-to-PCB Mounted

–––

J-PCB

Notes through are on page 2

www.irf.com

3/12/04

IRF6617

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250µA

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

–––

1.35

–––

∆ΒV_DSS/∆T_J

R_DS(on)

––– mV/°C Reference to 25°C, I_D= 1mA

mΩ

6.2

7.9

–––

-5.4

–––

8.1

V_GS= 10V, I_D= 15A e

V_GS= 4.5V, I_D= 12A e

V_DS= V_GS, I_D= 250µA

10.3

2.35

V_GS(th)

Gate Threshold Voltage

∆V_GS(th)/∆T_J

I_DSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

––– mV/°C

1.0

150

100

-100

–––

µA

V_DS= 24V, V_GS= 0V

V_DS= 24V, V_GS= 0V, T_J= 125°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

nA V_GS= 20V

V_GS= -20V

gfs

V_DS= 15V, I_D= 12A

Q_g

–––

Q_gs1

Q_gs2

Q_gd

Q_godr

Q_sw

Q_oss

t_d(on)

t_r

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

3.1

1.0

4.0

2.9

5.0

–––

V_DS= 15V

nC V_GS= 4.5V

I_D= 12A

See Fig. 17

nC V_DS= 15V, V_GS= 0V

Turn-On Delay Time

V_DD= 16V, V_GS= 4.5Vꢁe

Rise Time

I_D= 12A

t_d(off)

t_f

Turn-Off Delay Time

ns Clamped Inductive Load

Fall Time

3.7

C_iss

C_oss

C_rss

Input Capacitance

––– 1300 –––

V_GS= 0V

Output Capacitance

–––

430

160

–––

pF V_DS= 15V

ƒ = 1.0MHz

Reverse Transfer Capacitance

Diode Characteristics

Parameter

Continuous Source Current

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

–––

(Body Diode)

showing the

I_SM

Pulsed Source Current

(Body Diode)ꢁc

–––

120

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

0.81

1.0

T_J= 25°C, I_S= 12A, V_GS= 0V e

ns T_J= 25°C, I_F= 12A

Q_rr

di/dt = 100A/µs

7.2

Notes:

ꢀ Used double sided cooling, mounting pad.

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

Repetitive rating; pulse width limited by

max. junction temperature.

Starting T_J= 25°C, L = 0.40mH,

R_G= 25Ω, I_AS= 12A.

T_Cmeasured with thermal couple mounted to top (Drain) of part.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Surface mounted on 1 in. square Cu board.

R is measured at T_Jof approximately 90°C.

www.irf.com

IRF6617

1000

100

1000

100

VGS

10V

VGS

10V

TOP

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

2.5V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

2.5V

BOTTOM

2.5V

≤

60µs PULSE WIDTH

≤

60µs PULSE WIDTH

2.5V

Tj = 150°C

Tj = 25°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.0

1.5

1.0

0.5

1000.0

= 15A

= 10V

100.0

10.0

1.0

= 150°C

= 25°C

= 15V

≤

60µs PULSE WIDTH

0.1

1.0

2.0

3.0

4.0

5.0

6.0

-60 -40 -20

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

, Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

10000

= 0V,

= C

f = 1 MHZ

= 12A

= 24V

+ C , C

SHORTED

VDS= 15V

iss

= C

rss

oss

= C + C

Ciss

1000

Coss

Crss

100

, Drain-to-Source Voltage (V)

100

Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

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IRF6617

1000

100

1000.0

OPERATION IN THIS AREA

LIMITED BY R (on)

100.0

= 150°C

10.0

1.0

100µsec

1msec

= 25°C

10msec

Tc = 25°C

Tj = 150°C

Single Pulse

= 0V

0.1

100

1000

0.2

0.4

0.6

0.8

1.0

1.2

, Drain-toSource Voltage (V)

, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

2.5

2.0

1.5

1.0

= 250µA

100

125

150

-75 -50 -25

75 100 125 150

, Junction Temperature (°C)

, Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

Fig 9. Maximum Drain Current vs. Case Temperature

100

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

R₁

R₂

R₃

R₄

Ri (°C/W) τi (sec)

2.023

19.48

21.78

14.71

0.000678

0.240237

2.0167

^Jτ_J

^Cτ

¹τ₁

²τ₂

³τ₃

⁴τ₄

Ci= τi/Ri

0.01

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

SINGLE PULSE

( THERMAL RESPONSE )

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

100

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF6617

120

100

= 15A

TOP

5.2A

7.9A

12A

BOTTOM

= 125°C

= 25°C

2.0

4.0

6.0

8.0

10.0

100

125

150

, Gate-to-Source Voltage (V)

Starting T , Junction Temperature (°C)

Fig 12. On-Resistance Vs. Gate Voltage

Fig 13c. Maximum Avalanche Energy Vs. Drain Current

15V

L_D

V_DS

DRIVER

V_DD

D.U.T

20V

V_GS

0.01Ω

Pulse Width < 1µs

Duty Factor < 0.1%

Fig 13a. Unclamped Inductive Test Circuit

Fig 14a. Switching Time Test Circuit

V_DS

(BR)DSS

90%

10%

V_GS

t_d(on)

t_d(off)

t_r

t_f

Fig 14b. Switching Time Waveforms

Fig 13b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

Vds

50KΩ

Vgs

.2µF

12V

.3µF

D.U.T.

Vgs(th)

3mA

Current Sampling Resistors

Qgs1

Qgs2

Qgd

Qgodr

Fig 15. Gate Charge Test Circuit

Fig 16. Gate Charge Waveform

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IRF6617

Driver Gate Drive

P.W.

Period

D =

D.U.T

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

Re-Applied

Voltage

• di/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

R_G

Body Diode

Inductor Current

Forward Drop

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 17. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET^®Power MOSFETs

DirectFET Substrate and PCB Layout, ST Outline

(Small Size Can, T-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

1- Drain

2- Drain

3- Source

4- Source

5- Gate

6- Drain

7- Drain

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IRF6617

DirectFET Outline Dimension, ST Outline

(Small Size Can, T-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

DIMENSIONS

IMPERIAL

METRIC

MAX

CODE

MIN

4.75

3.70

2.75

0.35

0.58

0.75

0.53

0.26

O.88

2.18

0.59

0.03

0.08

MAX

0.191

0.156

0.112

0.018

0.024

0.031

0.022

0.012

0.039

0.090

0.028

0.003

0.007

4.85

3.95

2.85

0.45

0.62

0.79

0.57

0.30

0.98

2.28

0.187

0.146

0.108

0.014

0.023

0.030

0.021

0.010

0.035

0.086

Note: Controlling

dimensions are in mm

0.70 0.023

0.08

0.17

0.001

0.003

DirectFET Part Marking

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IRF6617

DirectFET Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as IRF6617). For 1000 parts on 7" reel,

order IRF6617TR1

REEL DIMENSIONS

STANDARD OPTION (QTY 4800)

TR1 OPTION (QTY 1000)

METRIC

MAX

IMPERIAL

METRIC

MIN

MAX

IMPERIAL

CODE

MIN

MAX

N.C

MIN

6.9

MAX

N.C

0.50

N.C

0.53

N.C

MIN

12.992

0.795

0.504

0.059

3.937

N.C

330.0

20.2

12.8

1.5

N.C

13.2

N.C

18.4

14.4

15.4

177.77 N.C

0.75

0.53

0.059

2.31

N.C

19.06

13.5

1.5

N.C

0.520

N.C

12.8

N.C

100.0

N.C

58.72

N.C

0.724

0.567

0.606

13.50

12.01

0.488

0.469

0.47

12.4

11.9

Loaded Tape Feed Direction

DIMENSIONS

METRIC

MAX

IMPERIAL

NOTE: CONTROLLING

DIMENSIONS IN MM

CODE

MIN

7.90

3.90

MIN

MAX

0.319

0.161

0.484

0.219

0.209

0.264

N.C

0.311

0.154

0.469

0.215

0.201

0.256

0.059

8.10

4.10

11.90

5.45

5.10

6.50

1.50

12.30

5.55

5.30

6.70

N.C

1.60

0.063

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.03/04

www.irf.com

IRF6617TRPBF [INFINEON]

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